In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing

2019 ◽  
Vol 13 (1) ◽  
pp. 31-36 ◽  
Author(s):  
Hirokazu Furukawa ◽  
Seiichiro Higashi ◽  
Tatsuya Okada ◽  
Hirotaka Kaku ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
In Situ Monitoring ◽  
Wafer Temperature ◽  
Si Wafer

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

A novel technique for in-situ monitoring of crystallinity and temperature during rapid thermal annealing of thin Si/Si-Ge films on quartz/glass

1996 ◽  
Vol 424 ◽  
Author(s):  
V. Subramanian ◽  
F. L. Degertekin ◽  
P. Dankoski ◽  
B. T. Khuri-Yakub ◽  
K. C. Saraswat
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Acoustic Waves ◽  
Liquid Crystal Display ◽  
In Situ Monitoring ◽  
Loop Control ◽  
Active Matrix ◽  
Novel Technique ◽  
End Point Detection ◽  
Point Detection

AbstractA novel technique is presented to simultaneously measure temperature and crystallinity insitu during the rapid thermal annealing of thin Si / SiGe films on transparent substrates for active matrix liquid crystal display applications. The technique uses acoustic waves to monitor temperature, by measuring changes in velocity with temperature. The technique enables accurate tracking of crystalline phase transitions along with temperature, since it is independent of emissivity. This provides a methodology for closed-loop control and end-point detection. The experiments on thin amorphous Si on Quartz demonstrate temperature repeatability of 2%. Also, the technique proved sensitive enough to detect the onset of nucleation, as evidenced by TEM.

In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure

2000 ◽  
Vol 76 (18) ◽  
pp. 2538-2540 ◽  
Author(s):  
Byung Hak Lee ◽  
Kee Sun Lee ◽  
Dong Kyun Sohn ◽  
Jeong Soo Byun ◽  
Chang Hee Han ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Tungsten Nitride ◽  
Silicon Structure ◽  
Barrier Formation

In-situMeasurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation

2008 ◽  
Vol 47 (4) ◽  
pp. 2460-2463 ◽  
Author(s):  
Hirokazu Furukawa ◽  
Seiichiro Higashi ◽  
Tatsuya Okada ◽  
Hirotaka Kaku ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Temperature Variation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Plasma ◽  
Plasma Jet ◽  
Thermal Plasma Jet ◽  
Si Wafer

The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

1997 ◽  
Vol 18 (11) ◽  
pp. 526-528 ◽  
Author(s):  
Chyuan Haur Kao ◽  
Chao Sung Lai ◽  
Chung Len Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing
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