Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Devices Based on DyScO3 Buffer Layer and Ferroelectric Bi3.25Nd0.75Ti3O12 Thin Film
2016 ◽
Vol 136
(10)
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pp. 437-442
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2018 ◽
Vol 676
(1)
◽
pp. 131-140
◽
Keyword(s):
Keyword(s):
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