Growth of Fluoride Quantum Well Heterostrucutres for Resonant Tunneling Devices on Si Substrates

2019 ◽  
Vol 13 (2) ◽  
pp. 253-262
Author(s):  
Kazuo Tsutsui ◽  
Takao Oshita ◽  
So Watanabe ◽  
Motoki Maeda
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Si Substrates ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

ORIGIN OF HYSTERESIS AND PLATEAU-LIKE BEHAVIOR OF THE I-V CHARACTERISTICS OF RESONANT TUNNELING DIODES

2000 ◽  
Vol 14 (04) ◽  
pp. 411-426 ◽  
Author(s):  
PEIJI ZHAO ◽  
H. L. CUI ◽  
D. L. WOOLARD ◽  
K. L. JENSEN ◽  
F. A. BUOT
Keyword(s):  
Energy Level ◽  
Quantum Well ◽  
Resonant Tunneling ◽  
Electron Tunneling ◽  
Energy Levels ◽  
Three Dimensional ◽  
Physical Factors ◽  
Tunneling Diodes ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

In terms of numerical calculation of the coupled Wigner function–Poisson equations, the explanation to the origin of hysteresis and plateau-like behavior of the I-V characteristics of double barrier resonant tunneling devices is put forth. Several basic physical factors play key roles in the process of electron tunneling. Among these the most important factors are the interference of the injected and the reflected electron waves which leads to the formation of an emitter quantum well, the coupling between the energy level in the main quantum well and that in the emitter quantum well, and the coupling between the energy level in the main quantum well and the conduction b and edge or the three-dimensional states in the emitter. The interplay of these factors determines the form of the I-V curve of the resonant tunneling structure. The coupling between the energy levels in the emitter quantum-well and the main quantum-well leads to the plateau behavior of the I-V curves. The strength of the coupling determines the average slope of the plateau-like region in the I-V curve. The bias domain that the coupling exists determines the length of the plateau-like structure in the I-V curve. The domain can be controlled by adjusting the width of the barriers. The hysteresis is shown to be a manifestation of the above-mentioned energy level coupling, the coupling between the energy level in the main quantum well and the conduction b and edge or the three-dimensional states in the emitter, and the quantitative accumulation and distribution of electrons in the emitter region. This work provides new insight for underst and ing the nonlinear I-V behavior and establishes a foundation for the future analysis of bistability and oscillation behavior in resonant tunneling structures.

Spin-Valve Effect in Magnetic Resonant Tunneling Devices

2001 ◽  
Vol 690 ◽  
Author(s):  
A. N. Chantis ◽  
D. O. Demchenko ◽  
A. G. Petukhov
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Electronic Device ◽  
Spin Valve ◽  
Resonant Level ◽  
Ferromagnetic Electrodes ◽  
Semiconductor Quantum Well ◽  
Valve Effect ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

ABSTRACTWe propose a new electronic device utilizing resonant tunneling between two magnetic materials. The device is comprised of a semiconductor quantum well sandwiched between two insulating barriers and two ferromagnetic electrodes. The situation in which a resonant level fits in the energy interval where the minority density of states of a ferromagnetic emitter is zero can be considered as an almost ideal spin valve and leads to a great enhancement of magnetoresistance. This situation can be achieved by tuning the width of the quantum well. As an example we will consider GaMnAs/AlAs/GaAs/AlAs/GaMnAs double-barrier heterostructure. We can demonstrate that at a certain thickness of the quantum well and the barriers this system can significantly outperform conventional tunneling junctions comprised of one insulating barrier sandwiched between two ferromagnetic electrodes.

RESONANT TUNNELING DEVICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-585-C5-588 ◽  
Author(s):  
R. E. NAHORY ◽  
N. TABATABAIE
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

Simulation of resonant tunneling devices based on different materials

2013 ◽  
Author(s):  
I. I. Abramov ◽  
Natali V. Kolomejtseva ◽  
I. A. Romanova ◽  
A. G. Klimovich
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices
Sign in / Sign up

Export Citation Format

Share Document