Low-Temperature SiO[sub 2] Layers Deposited by Combination of ECR Plasma and Supersonic Silane/Helium Jet

2008 ◽  
Vol 155 (2) ◽  
pp. G21 ◽  
Author(s):  
Alexey Y. Kovalgin ◽  
Gratiela Isai ◽  
Jisk Holleman ◽  
Jurriaan Schmitz
Keyword(s):  
Low Temperature ◽  
Ecr Plasma ◽  
Helium Jet

Low-temperature Preparation of Crystallized Zirconia Films by ECR Plasma MOCVD

2005 ◽  
Vol 890 ◽  
Author(s):  
Hiroshi Masumoto ◽  
Takashi Goto
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Low Temperatures ◽  
Monoclinic Zirconia ◽  
High Quality ◽  
Ion Chamber ◽  
Ecr Plasma ◽  
Low Temperature Preparation ◽  
Oxide Ion ◽  
Zirconia Films

ABSTRACTIt is known that zirconia has excellent thermal and chemical stability, and oxide ion conduction. Therefore, YSZ is expected to be used as oxide ion conducting materials, optical mirror materials, catalytic materials and heat-resistant materials. Zirconia films have been fabricated by PVD (ex. sputtering and laser-ablation), chemical vapor deposition (CVD) and sol-gel methods. CVD is capable to prepare high quality zirconia films with excellent conformal coverage; however, deposition temperature of conventional CVD was usually high than PVD. On the other hand, an electron cyclotron resonance (ECR) plasma is high-activity plasma and high quality crystalline films can be obtained at low temperature by using ECR plasma. In the present study, zirconia thin films were prepared at low temperatures on quartz, polycarbonate and polyimide substrates by ECR plasma MOCVD.Zr-hexafluoroacetylacetonato solution was used as a precursor. The source, which was placed in a glass bubbler, was carried into a reactor by Ar gas. A microwave (2.45 GHz, 500 W) was introduced into the ion chamber through a rectangular wave guide. A magnetic field (875 Gauss) was applied to the ion chamber to satisfy the ECR condition. A mirror-type magnetic field (450 Gauss at the substrate stage) was applied in order to raise a plasma density, which results in an increase of the deposition rates of films. Substrate temperature (Ts) was from 30 to 700 C by water-cooling holder and infrared lamp heater. Microwave power was changed from 0 to 900 W. The deposition time was from 30 to 120 minutes.Cubic, monoclinic and tetragonal zirconia films were obtained over Ts=400 C, and cubic and monoclinic zirconia films were obtained below Ts= C. Cubic and monoclinic zirconia films were also obtained at no heating. The deposition rate increased from 10 to 20 nm/min with increasing Ts from no heating to 600 C. Crystallized zirconia films were obtained on polycarbonate and polyimide substrates at no heating. The ECR plasma was significantly effective to prepare crystallized zirconia films at low temperatures.

Intermittency in a turbulent low temperature gaseous helium jet

2000 ◽  
Vol 17 (2) ◽  
pp. 309-317 ◽  
Author(s):  
O. Chanal ◽  
B. Chabaud ◽  
B. Castaing ◽  
B. Hébral
Keyword(s):  
Low Temperature ◽  
Gaseous Helium ◽  
Helium Jet

Low Temperature ECR -Plasma Assisted MOCVD Microcrystalline and Amorphous GaN Deposition and Characterization for Electronic Devices

1998 ◽  
Vol 536 ◽  
Author(s):  
Z. Hassan ◽  
M. E. Kordesch ◽  
W. M. Jadwisienzak ◽  
H. J. Lozykowski ◽  
W. Halverson ◽  
...  
Keyword(s):  
Low Temperature ◽  
Phonon Mode ◽  
Molecular Nitrogen ◽  
Electronic Devices ◽  
Diffraction Peak ◽  
Ecr Plasma ◽  
Broad Emission ◽  
Optically Transparent ◽  
Temperature Controlled ◽  
Reactor Pressure

AbstractGaN films have been deposited over a range of temperatures from 50 C to 650 C by ECR plasma MOCVD on silicon (111) and (100), sapphire and quartz using triethylgallium and molecular nitrogen or ammonia as reagents. Growth rates of 2 um/hr are achieved on temperature-controlled substrates (total reactor pressure 0.5 mTorr, 250 watts at 2.45 GHz).Films deposited at 200, 600 and 650 C on sapphire show the GaN(0002) diffraction peak and sharp photoluminescence lines (at 10 K) between 370 and 400 nm and broad emission at 530-550 nm. Broad photoluminescence at 390 nm is observed from GaN/Si( 11). Films deposited at 50 and 100 C show no evidence of a crystalline phase or GaN(0002) diffraction peak. The films are smooth and optically transparent. A broad photoluminescence peak at 520 nm, with a fwhm of about 150 nm is also observed (at 10K). The optical bandgap is measured to be about 2.6-2.7 eV. All of these films show a GaN LO phonon mode at 736 cm-l. IR spectra indicate some hydrocarbon impurities in the low temperature films.Prototype devices (Schottky barrier diodes) have been made from MOCVD GaN and amorphous GaN.

Dry Etching of PZT Films in an Ecr Plasma

1993 ◽  
Vol 310 ◽  
Author(s):  
Barbara Charlet ◽  
Kerrie E. Davies
Keyword(s):  
Surface Roughness ◽  
High Temperature ◽  
Low Temperature ◽  
Bias Voltage ◽  
Etch Rate ◽  
Effect Of Temperature ◽  
Ecr Plasma ◽  
Microwave Reactor ◽  
Pzt Films ◽  
Etch Profile

AbstractPZT films were etched in an ECR microwave reactor with RF polarization.The etch rate was evaluated using various gas mixtures including combinations of two of the following: C12, NF3, SF6 and HBr. The etch rate was measured as a function of the percentage of one gas in the mixture. Other parameters investigated included gas pressure, bias voltage on the electrode and substrate temperature.Results of the effect of temperature show that etch rates are higher on high temperature substrates than on low temperature substrates. A mixture of C12 and SF2 provided a PZT etch rate of 750 Å / min on a substrate, at approximately 100 °C. We evaluated the resultant etch profile and surface roughness

Sign in / Sign up

Export Citation Format

Share Document