Analysis of Silicon Thickness Reduction on Analog Parameters of GC GAA SOI Transitors Operating up to 300{degree sign}C

2019 ◽  
Vol 4 (1) ◽  
pp. 283-291
Author(s):  
Carolina D. dos Santos ◽  
M. A. Pavanello ◽  
João A. Martino
Keyword(s):  
Thickness Reduction ◽  
Silicon Thickness ◽  
Analog Parameters

High-Resolution Backside GMR Magnetic Current Imaging on a Contour-Milled Globally Ultrathin Die

2014 ◽  
Author(s):  
D. Vallett ◽  
J. Gaudestad ◽  
C. Richardson
Keyword(s):  
Quantum Interference ◽  
Flip Chip ◽  
Milling Process ◽  
Dramatic Improvement ◽  
Superconducting Quantum Interference Device ◽  
Density Peak ◽  
Magnetic Current ◽  
Gmr Sensors ◽  
Silicon Thickness ◽  
A Current

Abstract Magnetic current imaging (MCI) using superconducting quantum interference device (SQUID) and giant-magnetoresistive (GMR) sensors is an effective method for localizing defects and current paths [1]. The spatial resolution (and sensitivity) of MCI is improved significantly when the sensor is as close as possible to the current paths and associated magnetic fields of interest. This is accomplished in part by nondestructive removal of any intervening passive layers (e.g. silicon) in the sample. This paper will present a die backside contour-milling process resulting in an edge-to-edge remaining silicon thickness (RST) of < 5 microns, followed by a backside GMR-based MCI measurement performed directly on the ultra-thin silicon surface. The dramatic improvement in resolving current paths in an ESD protect circuit is shown as is nanometer scale resolution of a current density peak due to a power supply shortcircuit defect at the edge of a flip-chip packaged die.

In-Situ Mechanical Sample Preparation of Selected Sites and Components on Large Modules and Boards

2016 ◽  
Author(s):  
Jim Colvin ◽  
Timothy Hazeldine ◽  
Heenal Patel
Keyword(s):  
Sample Preparation ◽  
Printed Circuit Board ◽  
Circuit Board ◽  
Tilt Table ◽  
Standard Requirement ◽  
Open Design ◽  
Bga Packages ◽  
Silicon Thickness ◽  
Board Level

Abstract The standard requirement for FA Engineers needing to remove components from a board, prior to decapsulation or sample preparation, is shown to be greatly reduced, by the methods discussed here. By using a mechanical selected area preparation system with an open-design it is possible to reach all required areas of a large printed circuit board (PCB) or module to prepare a single component ‘in situ’. This makes subsequent optical or electrical testing faster and often more convenient to accomplish. Electronic End-pointing and 3D curvature compensation methods can often be used in parallel with sample prep techniques to further improve the consistency and efficacy of the decapsulation and thinning uniformity and final remaining silicon thickness (RST). Board level prep eliminates the worry of rework removal of BGA packages and the subsequent risk of damage to the device. Since the entire board is mounted, the contamination is restricted to the die surface and can be kept from the underside ball connections unlike current liquid immersion methods of package thinning or delayering. Since the camera is in line with the abrasion interface, imaging is real time during the entire milling and thinning process. Recent advances in automated tilt-table design have meant that a specific component’s angular orientation can be optimized for sample preparation. Improved tilt table technology also allows for improved mounting capability for boards of many types and sizes. The paper describes methods for decapsulation, thinning and backside polishing of a part ‘in situ’ on the polishing machine and allows the system to operate as a probe station for monitoring electrical characteristics while thinning. Considerations for designing board-level workholders are described – for boards that that are populated with components on one or even both sides. Using the techniques described, the quality of sample preparation and control is on a par with the processing of single package-level devices.

Electrical Invasiveness of Grinding and Polishing Silicon Integrated Circuits Down to 1 μm Remaining Silicon Thickness

2016 ◽  
Author(s):  
Robert Chivas ◽  
Scott Silverman ◽  
Michael DiBattista ◽  
Ulrike Kindereit
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Electron Hole ◽  
Analysis Techniques ◽  
Silicon Integrated Circuits ◽  
Electron Hole Pair ◽  
Pair Generation ◽  
Silicon Thickness ◽  
Performance Timing ◽  
Grinding And Polishing

Abstract Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. When the remaining silicon is reduced, some redistribution of stress is expected, possibly altering the performance (timing) of integrated circuits in addition to electron-hole pair generation. In this work, a study of the electrical invasiveness due to grinding and polishing silicon integrated circuits to ultra-thin (< 5 um global, ~ 1 um local) remaining thickness is presented.

BGA and Advanced Package Wire to Wire Bonding for Backside Emission Microscopy

1999 ◽  
Author(s):  
Jim B. Colvin
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Wire Bonding ◽  
Preparation Technique ◽  
Low Profile ◽  
Normal Test ◽  
Silicon Thickness ◽  
Working Distance ◽  
Polished Side ◽  
Analytical Tools

Abstract A new method of preparation will be shown which allows traditional fixturing such as test heads and probe stations to be utilized in a normal test mode. No inverted boards cabled to a tester are needed since the die remains in its original package and is polished and rebonded to a new package carrier with the polished side facing upward. A simple pin reassignment is all that is needed to correct the reverse wire sequence after wire to wire bonding or wire to frame bonding in the new package frame. The resulting orientation eliminates many of the problems of backside microscopy since the resulting package orientation is now frontside. The low profile as a result of this technique allows short working distance objectives such as immersion lenses to be used across the die surface. Test equipment can be used in conjunction with analytical tools such as the emission microscope or focused ion beam due to the upright orientation of the polished backside silicon. The relationship between silicon thickness and transmission for various wavelengths of light will be shown. This preparation technique is applicable to advanced packaging methods and has the potential to become part of future assembly processes.

Effect of Rolling Conditions on Microstructure and Mechanical Properties of AZ31 Mg Alloy

2005 ◽  
Vol 475-479 ◽  
pp. 529-532
Author(s):  
Tae Kwon Ha ◽  
Hwan Jin Sung ◽  
Woo Jin Park ◽  
Sang Ho Ahn
Keyword(s):  
Mechanical Properties ◽  
Uniform Elongation ◽  
Warm Rolling ◽  
Thickness Reduction ◽  
Mg Alloy ◽  
Roll Speed ◽  
Single Pass ◽  
Microstructure And Mechanical Properties ◽  
Roll Temperature ◽  
Az31 Mg Alloy

The effect of warm rolling under various conditions on the microstructure and mechanical property was investigated using an AZ31 Mg alloy sheet. Several processing parameters such as initial thickness, thickness reduction by a single pass rolling, rolling temperature, roll speed, and roll temperature were varied to elicit an optimum condition for the warm rolling process of AZ31 Mg alloy. Microstructure and mechanical properties were measured for specimens subjected to rolling experiments of various conditions. Warm rolling of 30% thickness reduction per pass was possible without any side-crack at temperatures as low as 200oC under the roll speed of 30 m/min. The initial microstructure before rolling was the mixed one consisting of partially recrystallized and cast structures. Grain refinement was found to occur actively during the warm rolling, producing a very fine grain size of 7 µm after 50% reduction in single pass rolling at 200oC. Yield strength of 204MPa, tensile strength of 330MPa and uniform elongation of 32% have been obtained in warm rolled sheets.

ACCUMULATIVE ROLL BONDING OF AZ31 MAGNESIUM ALLOY

2008 ◽  
Vol 22 (18n19) ◽  
pp. 2833-2939 ◽  
Author(s):  
S. M. FATEMI-VARZANEH ◽  
A. ZAREI-HANZAKI ◽  
M. HAGHSHENAS
Keyword(s):  
Grain Size ◽  
Magnesium Alloy ◽  
Accumulative Roll Bonding ◽  
Az31 Alloy ◽  
Thickness Reduction ◽  
Az31 Magnesium Alloy ◽  
Total Strain ◽  
Roll Bonding ◽  
Fine Grain

This work conducted to investigate the effects of accumulative roll bonding (ARB) method on achieving the ultra-fine grain microstructure in AZ31 alloy. Accordingly, a number of ARB routes at 400°C, applying thickness reductions per pass of 35%, 55%, and 85% were performed. The results indicate that both the final grain size and the degree of bonding have been dictated by the thickness reduction per pass. The larger pass reductions promote a higher degree of bonding. Increasing the total strain stimulates the formation of a more homogeneous ultra fine grain microstructure.

Low Coherence Interferometry for Non-Invasive Semiconductor Monitoring

1993 ◽  
Vol 324 ◽  
Author(s):  
Chris M. Lawson ◽  
Robert R. Michael
Keyword(s):  
Solar Cell ◽  
Manufacturing Processes ◽  
Growth Monitoring ◽  
Low Coherence ◽  
Non Invasive ◽  
Low Coherence Interferometry ◽  
Silicon Growth ◽  
Silicon Thickness ◽  
Efficient Solar Cell ◽  
Optical Low Coherence Reflectometry

AbstractWe report on the first use of optical low coherence reflectometry (OLCR) for Edge Defined Film-Fed Growth (EFG) silicon characterization. This OLCR sensor system has been used to measure horizontal profiles of silicon thickness and flatness to an accuracy of 1.5 Rim with the sensor head positioned 1 cm away from the silicon. The use of this noninvasive sensor for EFG silicon growth monitoring may lead to more efficient solar cell manufacturing processes.

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