Influence of Interface Recombination in Light Emission from Lateral Si-Based Light Emitting Devices

2019 ◽  
Vol 3 (33) ◽  
pp. 23-29
Author(s):  
Phuong LeMinh ◽  
Tu Hoang ◽  
Jisk Holleman ◽  
Jurriaan Schmitz
2019 ◽  
Vol 3 (11) ◽  
pp. 9-16
Author(s):  
Tu Hoang ◽  
Phuong LeMinh ◽  
Jisk Holleman ◽  
Jurriaan Schmitz

2021 ◽  
Vol 9 (9) ◽  
pp. 3052-3057
Author(s):  
Jerzy J. Langer ◽  
Ewelina Frąckowiak

H+LEDs are light emitting devices based on a protonic p–n junction; now with no organic polymers. The unique are non-linear optical effects: collimated light beams and stimulated Raman scattering (SRS), observed while generating intense light pulses.


RSC Advances ◽  
2019 ◽  
Vol 9 (47) ◽  
pp. 27665-27673
Author(s):  
Qian Zhang ◽  
Chunpeng Ai ◽  
Dianzhong Wen ◽  
Dongge Ma ◽  
Cheng Wang ◽  
...  

Newly designed and synthesized carbazole-based D–A polymers for ternary flash memory and light-emitting devices.


2018 ◽  
Vol 6 (29) ◽  
pp. 7913-7919 ◽  
Author(s):  
Yiwei Liu ◽  
Gang Niu ◽  
Can Yang ◽  
Shengli Wu ◽  
Liyan Dai ◽  
...  

High-k material based solid state incandescent devices (SSI-LEDs) have attracted intense attention as a promising candidate for future broadband light emitting devices.


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