Simple Fabrication of a Silver Epoxy Coated Microelectrode for SECM Imaging in Small Volumes

2019 ◽  
Vol 3 (31) ◽  
pp. 249-258
Author(s):  
L. F. Diaz-Ballote ◽  
David O. Wipf
Keyword(s):  
Silver Epoxy

Dynamics of in situ synthetized silver-epoxy nanocomposites as studied by dielectric relaxation spectroscopy

2010 ◽  
Vol 120 (4) ◽  
pp. 2361-2367 ◽  
Author(s):  
G. Kortaberria ◽  
P. Arruti ◽  
I. Mondragon ◽  
L. Vescovo ◽  
M. Sangermano
Keyword(s):  
Dielectric Relaxation ◽  
Dielectric Relaxation Spectroscopy ◽  
Epoxy Nanocomposites ◽  
Silver Epoxy

scholarly journals Transferred PMN-PT Thick Film on Conductive Silver Epoxy

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1621 ◽  
Author(s):  
Tao Zhang ◽  
Jun Ou-Yang ◽  
Xiaofei Yang ◽  
Benpeng Zhu
Keyword(s):  
Thick Film ◽  
Silicon Substrate ◽  
Chemical Method ◽  
Piezoelectric Properties ◽  
Sol Gel ◽  
Wet Chemical Method ◽  
Chemical Route ◽  
Wet Chemical ◽  
Silver Epoxy ◽  
Ferroelectric And Piezoelectric Properties

Approximately 25 μm Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) thick film was synthesized based on a sol-gel/composite route. The obtained PMN-PT thick film was successfully transferred from the Silicon substrate to the conductive silver epoxy using a novel wet chemical method. The mechanism of this damage free transfer was explored and analyzed. Compared with the film on Silicon substrate, the transferred one exhibited superior dielectric, ferroelectric and piezoelectric properties. These promising results indicate that transferred PMN-PT thick film possesses the capability for piezoelectric device application, especially for ultrasound transducer fabrication. Most importantly, this chemical route opens a new path for transfer of thick film.

scholarly journals FBG Sensor Probes with Silver Epoxy for Tracing the Maximum Strain of Structures

2013 ◽  
Vol 33 (5) ◽  
pp. 459-464 ◽  
Author(s):  
Jooeun Im ◽  
Mihyun Kim ◽  
Ki-Sun Choi ◽  
Tae-Kyung Hwang ◽  
Il-Bum Kwon
Keyword(s):  
Maximum Strain ◽  
Fbg Sensor ◽  
Silver Epoxy

Elemental Analysis and Current-Voltage Characteristics of LiZnP and LiZnAs Samples for Solid-State Neutron Detectors

2013 ◽  
Vol 1576 ◽  
Author(s):  
Benjamin W. Montag ◽  
Michael A. Reichenberger ◽  
Kevin R. Arpin ◽  
Kyle A. Nelson ◽  
Philip B. Ugorowski ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
High Efficiency ◽  
Electrical Characterization ◽  
Atomic Emission ◽  
Bulk Single Crystal ◽  
Neutron Detectors ◽  
Background Radiations ◽  
Inductively Coupled ◽  
Current Voltage ◽  
Silver Epoxy

ABSTRACTResearch for a reliable solid-form semiconductor neutron detector continues because such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q value of 4.78 MeV, larger than 10B, and easily identified above background radiations. Hence, devices composed of either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) may provide a semiconductor material for compact high efficiency neutron detectors. A sub-branch of the III-V semiconductors, the filled tetrahedral compounds, AIBIICV, known as Nowotny-Juza compounds, are known for their desirable cubic crystal structure, and were originally studied for photonic applications. Equimolar portions of Li, Zn, and P or As were sealed under vacuum (10-6 Torr) in quartz ampoules with a graphite lining, loaded into a compounding furnace, and heated to 560 °C to form the ternary compound, LiZnP or LiZnAs, and further annealed to promote crystallization. The chemical composition of the synthesized starting material was confirmed at Galbraith Laboratories, Inc. by Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES), which showed the compounds were reacted in equal ratios, 1-1-1, to form ternary compounds. Bulk single crystal samples were grown by a high temperature technique described elsewhere. Samples were cut, polished, and prepared for electrical characterization by depositing a Ti/Au contact onto one side of the one of the samples and using silver epoxy to form the other contact. Current-voltage curves were collected for a sample with silver epoxy for both anode and cathode contact, and for a sample with a Ti-Au anode contact and silver epoxy cathode contact. A much higher resistivity was calculated, 6.6 x 1010 Ω·cm, for the sample with a Ti-Au contact compared the high conductivity seen with the sample using silver epoxy contacts.

Improved Heat Dissipation and Optical Performance of High-power LED Packaging with Sintered Nanosilver Die-attach Material

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001585-001605 ◽  
Author(s):  
Paul Panaccione ◽  
Tao Wang ◽  
Guo-Quan Lu ◽  
Xu Chen ◽  
Susan Luo
Keyword(s):  
Thermal Resistance ◽  
High Power ◽  
Heat Removal ◽  
High Current ◽  
Die Attach ◽  
High Power Led ◽  
Silver Epoxy ◽  
The Difference ◽  
Nanosilver Paste ◽  
The Impact

Heat removal in packaged high-power light-emitting diode (LED) chips is critical to device performance and reliability. Thermal performance of LEDs is important in that lowered junction temperatures extend the LED's lifetime at a given photometric flux (brightness). Optionally, lower thermal resistance can enable increased brightness operation without exceeding the maximum allowable Tj for a given lifetime. A significant portion of the junction-to-case thermal resistance comes from the joint between chip and substrate, or the die-attach layer. In this study, we evaluated three different types of leading die-attach materials; silver epoxy, lead-free solder, and an emerging nanosilver paste. Each of the three was processed via their respective physical and chemical mechanisms: epoxy curing by cross-linking of polymer molecules; intermetalic soldering by reflow and solidification; and nanosilver sintering by solid-state atomic diffusion. High-power LED chips with a chip area of 3.9 mm2 were attached by the three types of materials onto metalized aluminum nitride substrates, wire-bonded, and then tested in an electro-optical setup. The junction-to-heatsink thermal resistance of each LED assembly was determined by the wavelength shift methodology, described in detail in this paper. We found that the average thermal resistance in the chips attached by the nanosilver paste was the lowest, and it is the highest from the chips attached by the silver epoxy: the difference between the two was about 0.7°C/W, while the difference between the sintered and soldered was about 0.3°C/W. The lower thermal resistance in the sintered joints is expected to significantly improve the photometric flux from the device. Simple calculations, excluding high current efficiency droop, predict that the brightness improvement could be as high as 50% for the 3.9 mm2 chip. The samples will be functionally tested at high current, in both steady-state and pulsed operation, to determine brightness improvements, including the impact of droop. Nanosilver die-attach on a range of chip sizes up to 12 mm2 are also considered and discussed.

scholarly journals Silver-epoxy microwave filters and thermalizers for millikelvin experiments

2014 ◽  
Vol 104 (21) ◽  
pp. 211106 ◽  
Author(s):  
Christian P. Scheller ◽  
Sarah Heizmann ◽  
Kristine Bedner ◽  
Dominic Giss ◽  
Matthias Meschke ◽  
...  
Keyword(s):  
Microwave Filters ◽  
Silver Epoxy
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