Influence of Temperature on the Saturation of the Forward Voltage Drift in SiC Pin Diodes

2019 ◽  
Vol 11 (5) ◽  
pp. 239-245
Author(s):  
Joshua D. Caldwell ◽  
Robert Stahlbush ◽  
Orest Glembocki ◽  
Karl Hobart
Keyword(s):  
Forward Voltage ◽  
Pin Diodes ◽  
Influence Of Temperature ◽  
Voltage Drift ◽  
Influence Of Temperature On

Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B

2005 ◽  
pp. 989-992
Author(s):  
S.I. Maximenko ◽  
Stanislav Soloviev ◽  
A.E. Grekov ◽  
A. Bolotnikov ◽  
Ying Gao ◽  
...  
Keyword(s):  
Forward Voltage ◽  
Pin Diodes ◽  
Voltage Drift

Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B

2005 ◽  
Vol 483-485 ◽  
pp. 989-992 ◽  
Author(s):  
S.I. Maximenko ◽  
Stanislav I. Soloviev ◽  
A.E. Grekov ◽  
A.V. Bolotnikov ◽  
Ying Gao ◽  
...  
Keyword(s):  
Current Density ◽  
Room Temperature ◽  
Stacking Faults ◽  
Applied Current ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Applied Current Density ◽  
Voltage Drift ◽  
Significant Change ◽  
Degradation Testing

The degradation of diffused SiC PIN diodes during forward-biased operation was studied by first fabricating PIN diodes by diffusion of aluminum or boron into 4H-SiC substrates with n-type 10-15 µm thick epilayers doped by nitrogen up to 5x1015cm-3. The formed diodes were subjected to degradation testing under an applied current density of 200A/cm2 at room temperature. The majority of the Al diffused diodes demonstrated a voltage drift, ΔVf, of more than 2 V, while B-doped diodes showed no significant change in forward voltage. The EBIC mode of SEM was employed to monitor nucleation and expansion of stacking faults.

Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

2009 ◽  
Vol 615-617 ◽  
pp. 703-706 ◽  
Author(s):  
Nicolas Dheilly ◽  
Dominique Planson ◽  
Pierre Brosselard ◽  
Jawad ul Hassan ◽  
Pascal Bevilacqua ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Carrier Lifetime ◽  
Open Circuit ◽  
Pin Diode ◽  
Electrical Measurements ◽  
Pin Diodes ◽  
Influence Of Temperature ◽  
Voltage Decay ◽  
Influence Of Temperature On ◽  
New Generation

This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.

Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes

2007 ◽  
Vol 37 (5) ◽  
pp. 699-705 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Orest J. Glembocki ◽  
Robert E. Stahlbush ◽  
Karl D. Hobart
Keyword(s):  
Stacking Fault ◽  
Pin Diodes ◽  
Influence Of Temperature ◽  
Influence Of Temperature On

High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift

2004 ◽  
Vol 457-460 ◽  
pp. 1105-1108 ◽  
Author(s):  
Mrinal K. Das ◽  
Joseph J. Sumakeris ◽  
Michael J. Paisley ◽  
Adrian R. Powell
Keyword(s):  
High Power ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Voltage Drift

Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift

2009 ◽  
Vol 24 (9) ◽  
pp. 095004 ◽  
Author(s):  
P Brosselard ◽  
A Pérez-Tomás ◽  
J Hassan ◽  
N Camara ◽  
X Jordà ◽  
...  
Keyword(s):  
Large Area ◽  
Low Loss ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Voltage Drift

SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV

2013 ◽  
Vol 740-742 ◽  
pp. 899-902 ◽  
Author(s):  
Birgit Kallinger ◽  
Patrick Berwian ◽  
Jochen Friedrich ◽  
Christian Hecht ◽  
Dethard Peters ◽  
...  
Keyword(s):  
Stress Test ◽  
Stacking Faults ◽  
Active Area ◽  
Structural Defects ◽  
Electrical Characteristics ◽  
Wafer Level ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Electrical Stress ◽  
Voltage Drift

4H-SiC PiN diodes for 6.5 kV were manufactured on both 4° and 8° off-cut substrates and subjected to an electrical stress test on wafer level and subsequent analysis of structural defects present in the active area of the diodes. For 8° off-cut diodes, the electrical characteristics with respect to leakage current and forward voltage drift are worse than the electrical characteristics of 4° off-cut diodes. Furthermore, a large number of stacking faults was found in 8° off-cut diodes, but little evidence for bipolar degradation was found in 4° off-cut diodes. Therefore, bipolar degradation was significantly reduced by avoiding BPDs in the active area of PiN diodes, i.e. by the use of 4° off-cut substrates. Furthermore, a strong correlation was found between the electrical screening test on wafer level and critical defects.

The effect of temperature on high-resolution TEM image contrast

1995 ◽  
Vol 53 ◽  
pp. 640-641
Author(s):  
T. Geipel ◽  
W. Mader ◽  
P. Pirouz
Keyword(s):  
Form Factor ◽  
Inelastic Scattering ◽  
Accurate Method ◽  
Waller Factor ◽  
Effect Of Temperature ◽  
Specimen Thickness ◽  
Influence Of Temperature ◽  
Debye Waller Factor ◽  
Influence Of Temperature On ◽  
Atomic Form Factor

Temperature affects both elastic and inelastic scattering of electrons in a crystal. The Debye-Waller factor, B, describes the influence of temperature on the elastic scattering of electrons, whereas the imaginary part of the (complex) atomic form factor, fc = fr + ifi, describes the influence of temperature on the inelastic scattering of electrons (i.e. absorption). In HRTEM simulations, two possible ways to include absorption are: (i) an approximate method in which absorption is described by a phenomenological constant, μ, i.e. fi; - μfr, with the real part of the atomic form factor, fr, obtained from Hartree-Fock calculations, (ii) a more accurate method in which the absorptive components, fi of the atomic form factor are explicitly calculated. In this contribution, the inclusion of both the Debye-Waller factor and absorption on HRTEM images of a (Oll)-oriented GaAs crystal are presented (using the EMS software.Fig. 1 shows the the amplitudes and phases of the dominant 111 beams as a function of the specimen thickness, t, for the cases when μ = 0 (i.e. no absorption, solid line) and μ = 0.1 (with absorption, dashed line).

The Influence of Temperature on Successful Reproductions of Burbot, Lota Lota (L.) Under Hatchery Conditions

2010 ◽  
Vol 25 (1) ◽  
pp. 93-105 ◽  
Author(s):  
Daniel Żarski ◽  
Dariusz Kucharczyk ◽  
Wojciech Sasinowski ◽  
Katarzyna Targońska ◽  
Andrzej Mamcarz
Keyword(s):  
Lota Lota ◽  
Influence Of Temperature ◽  
Influence Of Temperature On
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