Challenges in Nickel Platinum Silicide Wet Etching for Sub-65nm Device Technology

2019 ◽  
Vol 11 (2) ◽  
pp. 321-326 ◽  
Author(s):  
Felicia Goh ◽  
Vincent K.T. Sih ◽  
Wee Leng Tan ◽  
Zainab Ismail
Keyword(s):  
Wet Etching ◽  
Platinum Silicide ◽  
Nickel Platinum ◽  
Device Technology

Self-aligned nickel–platinum silicide oxidation

2008 ◽  
Vol 154-155 ◽  
pp. 155-158 ◽  
Author(s):  
B. Imbert ◽  
S. Zoll ◽  
P. Garnier ◽  
B. Pernet ◽  
D. Galpin ◽  
...  
Keyword(s):  
Platinum Silicide ◽  
Nickel Platinum

(Invited) Nickel and Nickel-Platinum Silicide for BiCMOS Devices

2020 ◽  
Vol 98 (5) ◽  
pp. 351-361
Author(s):  
Dirk Wolansky ◽  
Jean-Paul Blaschke ◽  
Jürgen Drews ◽  
Thomas Grabolla ◽  
Bernd Heinemann ◽  
...  
Keyword(s):  
Platinum Silicide ◽  
Nickel Platinum

Raman study of Nickel-Platinum Silicide formed by RTP process

2013 ◽  
Author(s):  
F.H. Cioldin ◽  
M.V.P. dos Santos ◽  
I. Doi ◽  
J.A. Diniz ◽  
A. Flacker ◽  
...  
Keyword(s):  
Platinum Silicide ◽  
Raman Study ◽  
Nickel Platinum

(Invited) Nickel and Nickel-Platinum Silicide for BiCMOS Devices

2020 ◽  
Vol MA2020-02 (24) ◽  
pp. 1749-1749
Author(s):  
Dirk Wolansky ◽  
Jean-Paul Blaschke ◽  
Jürgen Drews ◽  
Thomas Grabolla ◽  
Bernd Heinemann ◽  
...  
Keyword(s):  
Platinum Silicide ◽  
Nickel Platinum

Process-Induced Strained P-MOSFET Featuring Nickel-Platinum Silicided Source/Drain

2006 ◽  
Vol 913 ◽  
Author(s):  
Rinus Tek Po Lee ◽  
Tsung-Yang Liow ◽  
Kian-Ming Tan ◽  
Kah-Wee Ang ◽  
King-Jien Chui ◽  
...  
Keyword(s):  
Strain Engineering ◽  
Gate Length ◽  
Electrical Characteristics ◽  
Drive Current ◽  
Platinum Silicide ◽  
Device Integration ◽  
Nickel Platinum

AbstractWe report the use of nickel-platinum silicide (NiPtSi) as a source/drain (S/D) material for strain engineering in P-MOSFETs to improve drive current performance. The material and electrical characteristics of NiPtSi with various Pt concentrations was investigated and compared with those of NiSi. Ni0.95Pt0.05Si was selected for device integration. A 0.18 μm gate length P-MOSFET achieved a 22% gain in IDsat when Ni0.95Pt0.05Si S/D is employed instead of NiSi S/D. The enhancement is attributed to strain modification effects related to the nickel-platinum silicidation process.

The observation of defects on (100) CdTe surfaces by chemical etching

1992 ◽  
Vol 50 (2) ◽  
pp. 1424-1425
Author(s):  
M.E. Lee
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Chemical Etching ◽  
Crystalline Perfection ◽  
Crystalline Defects ◽  
High Incidence ◽  
Crystallographic Defects ◽  
Cdznte Substrates ◽  
Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

A procedure for cross-sectioning materials for TEM analysis without ion milling

1990 ◽  
Vol 48 (4) ◽  
pp. 742-743
Author(s):  
J.P. Benedict ◽  
Ron Anderson ◽  
S. J. Klepeis
Keyword(s):  
Surface Topography ◽  
Milling Time ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Cleaning Operation ◽  
Tem Analysis ◽  
Platinum Silicide ◽  
Surface Alteration ◽  
Polishing Damage ◽  
Tools And Methods

Traditional specimen preparation procedures for non-biological samples, especially cross section preparation procedures, involves subjecting the specimen to ion milling for times ranging from minutes to tens of hours. Long ion milling time produces surface alteration, atomic number and rough-surface topography artifacts, and high temperatures. The introduction of new tools and methods in this laboratory improved our ability to mechanically thin specimens to a point where ion milling time was reduced to one to ten minutes. Very short ion milling times meant that ion milling was more of a cleaning operation than a thinning operation. The preferential thinning and the surface topography that still existed in briefly ion milled samples made the study of interfaces between materials such as platinum silicide and silicon difficult. These two problems can be eliminated by completely eliminating the ion milling step and mechanically polishing the sample to TEM transparency with the procedure outlined in this communication. Previous successful efforts leading to mechanically thinned specimens have shown that problems center on tool tilt control, removal of polishing damage, and specimen cleanliness.

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