Enhanced Carrier Transportation on Passivated Gallium Nitride Single Nanowire Field-Effect Transistor

2019 ◽  
Vol 6 (2) ◽  
pp. 133-136
Author(s):  
Jeng Wei Yu ◽  
Han Min Wu ◽  
Lung Han Peng
Keyword(s):  
Gallium Nitride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Nanowire ◽  
Effect Transistor ◽  
Carrier Transportation

scholarly journals Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure

Electronics ◽  
2019 ◽  
Vol 8 (2) ◽  
pp. 241 ◽  
Author(s):  
Huolin Huang ◽  
Feiyu Li ◽  
Zhonghao Sun ◽  
Nan Sun ◽  
Feng Zhang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Blocking Layer ◽  
Vertical Field ◽  
Current Blocking Layer ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor ◽  
Current Blocking

A gallium nitride (GaN) semiconductor vertical field-effect transistor (VFET) has several attractive advantages such as high power density capability and small device size. Currently, some of the main issues hindering its development include the realization of normally off operation and the improvement of high breakdown voltage (BV) characteristics. In this work, a trenched-gate scheme is employed to realize the normally off VFET. Meanwhile, an additional back current blocking layer (BCBL) is proposed and inserted into the GaN normally off VFET to improve the device performance. The electrical characteristics of the proposed device (called BCBL-VFET) are investigated systematically and the structural parameters are optimized through theoretical calculations and TCAD simulations. We demonstrate that the BCBL-VFET exhibits a normally off operation with a large positive threshold voltage of 3.5 V and an obviously increased BV of 1800 V owing to the uniform electric field distribution achieved around the gate region. However, the device only shows a small degradation of on-resistance (RON). The proposed scheme provides a useful reference for engineers in device fabrication work and will be promising for the applications of power electronics.

Nanomembranes: Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor (Adv. Funct. Mater. 41/2014)

2014 ◽  
Vol 24 (41) ◽  
pp. 6564-6564
Author(s):  
Kanglin Xiong ◽  
Sung Hyun Park ◽  
Jie Song ◽  
Ge Yuan ◽  
Danti Chen ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Electrochemical Growth of InSb Nanowires and Report of a Single Nanowire Field Effect Transistor

2008 ◽  
Vol 3 (2) ◽  
pp. 199-202 ◽  
Author(s):  
M. Ibrahim Khan ◽  
Miroslav Penchev ◽  
Xiaoye Jing ◽  
Xu Wang ◽  
Krassimir N. Bozhilov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Single Nanowire ◽  
Electrochemical Growth ◽  
Effect Transistor ◽  
Insb Nanowires

High-yield TiO2 nanowire synthesis and single nanowire field-effect transistor fabrication

2008 ◽  
Vol 92 (24) ◽  
pp. 242111 ◽  
Author(s):  
Jeong Min Baik ◽  
Myung Hwa Kim ◽  
Christopher Larson ◽  
Xihong Chen ◽  
Shujing Guo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Yield ◽  
Single Nanowire ◽  
Tio2 Nanowire ◽  
Effect Transistor ◽  
Nanowire Synthesis ◽  
Transistor Fabrication

scholarly journals Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material

Doklady BGUIR ◽  
2021 ◽  
Vol 19 (6) ◽  
pp. 74-82
Author(s):  
V. S. Volcheck ◽  
V. R. Stempitsky
Keyword(s):  
Thermal Conductivity ◽  
Gallium Nitride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Heat Removal ◽  
High Thermal Conductivity ◽  
Device Structures ◽  
Effect Transistor ◽  
Heat Removal System ◽  
Removal System

The self-heating effect poses a main problem for high-power electronic and optoelectronic devices based on gallium nitride. A non-uniform distribution of the dissipated power and a rise of the average temperature inside the gallium nitride heterostructure field-effect transistor lead to the formation of a hot spot near the conducting channel and result in the degradation of the drain current, output power and device reliability. The purpose of this work is to develop the design of a gallium nitride heterostructure field-effect transistor with an effective heat-removal system and to study using numerical simulation the thermal phenomena specific to this device. The objects of the research are the device structures formed on sapphire, each of whom features both a graphene heat-eliminating element on its top surface and a trench in the passivation layer filled by a high thermal conductivity material. The subject of the research is the electrical and thermal characteristics of these device structures. The simulation results verify the effectiveness of the integration of the heat-removal system into the gallium nitride heterostructure field-effect transistor that can mitigate the self-heating effect and improve the device performance. The advantage of our concept is that the graphene heat-eliminating element is structurally connected with a heat sink and is designed for removing the heat immediately from the maximum temperature area through the trench in which a high thermal conductivity material is deposited. The results can be used by the electronics industry of the Republic of Belarus for developing the hardware components of gallium nitride power electronics.

Sign in / Sign up

Export Citation Format

Share Document