Polarization Properties of an Intermediate Temperature Operated Ceramic Reactor in Power Generating Mode

2019 ◽  
Vol 7 (1) ◽  
pp. 609-613 ◽  
Author(s):  
Shin-Ichi Hashimoto ◽  
Hanako Nishino ◽  
Yu Liu ◽  
Koichi Asano ◽  
Katsuhito Takei ◽  
...  
Keyword(s):  
Intermediate Temperature ◽  
Generating Mode

scholarly journals Stabilization of Ferroelectric Phase in Highly Oriented Quinuclidinium Perrhenate (HQReO4) Thin Films

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2126
Author(s):  
Junyoung Lee ◽  
Woojun Seol ◽  
Gopinathan Anoop ◽  
Shibnath Samanta ◽  
Sanjith Unithrattil ◽  
...  
Keyword(s):  
Thin Films ◽  
Solution Process ◽  
Intermediate Temperature ◽  
Perovskite Oxide ◽  
Temperature Phase ◽  
Polar Phase ◽  
Practical Applications ◽  
Temperature Range ◽  
Potential Alternative ◽  
Temperature Window

The low-temperature processability of molecular ferroelectric (FE) crystals makes them a potential alternative for perovskite oxide-based ferroelectric thin films. Quinuclidinium perrhenate (HQReO4) is one such molecular FE crystal that exhibits ferroelectricity when crystallized in an intermediate temperature phase (ITP). However, bulk HQReO4 crystals exhibit ferroelectricity only for a narrow temperature window (22 K), above and below which the polar phase transforms to a non-FE phase. The FE phase or ITP of HQReO4 should be stabilized in a much wider temperature range for practical applications. Here, to stabilize the FE phase (ITP) in a wider temperature range, highly oriented thin films of HQReO4 were prepared using a simple solution process. A slow evaporation method was adapted for drying the HQReO4 thin films to control the morphology and the temperature window. The temperature window of the intermediate temperature FE phase was successfully widened up to 35 K by merely varying the film drying temperature between 333 and 353 K. The strategy of stabilizing the FE phase in a wider temperature range can be adapted to other molecular FE materials to realize flexible electronic devices.

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