On-Wafer Test Method of Metal-Insulator-Metal Capacitor Life using Time Dependent Dielectric Breakdown

2019 ◽  
Vol 6 (3) ◽  
pp. 415-429 ◽  
Author(s):  
Bhola N. De ◽  
Mohsen Shokrani
Keyword(s):  
Dielectric Breakdown ◽  
Test Method ◽  
Time Dependent ◽  
Metal Insulator ◽  
Time Dependent Dielectric Breakdown ◽  
Metal Insulator Metal ◽  
Wafer Test

Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CN02 ◽  
Author(s):  
Kyungjun Kim ◽  
Chulmin Choi ◽  
Youngtaek Oh ◽  
Hiroaki Sukegawa ◽  
Seiji Mitani ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Test Method ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown

scholarly journals Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 723
Author(s):  
Dongmin Keum ◽  
Hyungtak Kim
Keyword(s):  
Field Effect ◽  
Proton Irradiation ◽  
Dielectric Breakdown ◽  
Field Effect Transistors ◽  
Time Dependent ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Time Dependent Dielectric Breakdown ◽  
Vertical Field ◽  
Heterostructure Field Effect Transistors

In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal–insulator–semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of normally-off AlGaN/GaN gate-recessed MISHFETs exhibited a gate voltage (VGS) dependence as expected and showed negligible degradation even after proton irradiation. However, a capture emission time (CET) map and cathodoluminescence (CL) measurements revealed that the MIS structure was degraded with increasing trap states. A technology computer aided design (TCAD) simulation indicated the decrease of the vertical field beneath the gate due to the increase of the trap concentration. Negligible degradation of TDDB can be attributed to this mitigation of the vertical field by proton irradiation.

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET

2021 ◽  
Vol 68 (5) ◽  
pp. 2220-2225
Author(s):  
Stefano Dalcanale ◽  
Michael J. Uren ◽  
Josephine Chang ◽  
Ken Nagamatsu ◽  
Justin A. Parke ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dielectric Breakdown ◽  
Noise Analysis ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown

Study of Time Dependent Dielectric Breakdown Distribution in Ultrathin Gate Oxide

2007 ◽  
Vol 46 (No. 28) ◽  
pp. L691-L692 ◽  
Author(s):  
Takashi Miyakawa ◽  
Tsutomu Ichiki ◽  
Junichi Mitsuhashi ◽  
Kazutoshi Miyamoto ◽  
Tetsuo Tada ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown

Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors

2021 ◽  
Author(s):  
Federico Giuliano ◽  
Susanna Reggiani ◽  
Elena Gnani ◽  
Antonio Gnudi ◽  
Mattia Rossetti ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Time Dependent ◽  
Constant Current ◽  
Amorphous Sio2 ◽  
Current Time ◽  
Time Dependent Dielectric Breakdown
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