The Study of Hafnium Silicate by NO Gas Annealing Treatment

2019 ◽  
Vol 6 (1) ◽  
pp. 129-139
Author(s):  
Dong Chan Suh ◽  
Dongwon Lee ◽  
Kwon Bum Chung ◽  
Mann-Ho Cho ◽  
Dae-Hong Ko
Keyword(s):  
Annealing Treatment ◽  
Hafnium Silicate

Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity

2013 ◽  
Vol 854 ◽  
pp. 125-133 ◽  
Author(s):  
Larysa Khomenkova ◽  
Xavier Portier ◽  
Abdelilah Slaoui ◽  
Fabrice Gourbilleau
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Radio Frequency Magnetron Sputtering ◽  
Hafnium Silicate ◽  
Evolution Of Microstructure

Hafnium silicate dielectric films were fabricated by radio frequency magnetron sputtering. Their microstructure and electrical properties were studied versus annealing treatment. The evolution of microstructure and the formation of alternated HfO2-rich and SiO2-rich layers were observed and explained by surface directed spinodal decomposition. The stable tetragonal HfO2 phase was formed upon an annealing at 1000-1100°C. The control of annealing temperature allowed the memory window to be achieved and to be tuned as well as the dielectric constant to be enhanced.

The Study of Hafnium Silicate by Various Nitrogen Gas Annealing Treatment

2008 ◽  
Vol 1073 ◽  
Author(s):  
Dong Chan Suh ◽  
Kwun Bum Chung ◽  
Mann-Ho Cho ◽  
Young Dae Cho ◽  
Dae-Hong Ko
Keyword(s):  
Thin Film ◽  
Annealing Treatment ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Si Substrate ◽  
Nitrogen Gas ◽  
Hafnium Silicate ◽  
Annealing Conditions ◽  
Post Annealing ◽  
Silicate Film

ABSTRACTPost annealing of Hf-silicate thin film grown by ALD was done with different kind of nitrogen gas and order of annealing. Annealing conditions are as follows: (1) NO gas only, (2) NH3 gas only, (3) NO gas + NH3 gas, and (4) NH3 + NO gas. With these conditions, the physical and electrical properties of nitrided Hf-silicate films were analyzed. Content of nitrogen is decreased with post NO gas annealing. In case of NH3, content of nitrogen is much higher than NO case. Most nitrogen atoms were distributed between Si substrate and Hf-silicate film for NO gas annealing. However, with NH3 gas annealing, nitrogen atoms were distributed in the whole Hf-silicate film evenly. Leakage current was decreased with post NO gas annealing and flat band voltage was also decreased.

Morphological transformations in solution-cast Styrene-Butadiene-Styrene (SBS) triblock copolymer thin films

1995 ◽  
Vol 53 ◽  
pp. 184-185
Author(s):  
Ginam Kim ◽  
W. Marsillo ◽  
M. Libera
Keyword(s):  
Thin Films ◽  
Triblock Copolymer ◽  
Annealing Treatment ◽  
Minor Component ◽  
Solvent Evaporation ◽  
Single Crystal Substrate ◽  
Transparent Films ◽  
Crystal Substrate ◽  
Solution Cast ◽  
Morphological Transformations

The fact that block copolymers can assume a range of morphologies depending upon such variables as relative block length and molecular weight is now well known. In the case of poly(styrene)[PS]-poly(butadiene)[PB]-poly(styrene) (SBS) triblock copolymer, the morphologies range from spheres (roughly ~20% minor component), to cylinders (roughly 20%~35% minor component), to lamellae (roughly equal component fractions) Most recently, there has been increasing interest in transformations between morphologies by thermal annealing. This paper describes initial results studying the effect of solvent evaporation rate and post-casting annealing treatment on the morphology of SBS thin films.TEM specimens were prepared by solution casting electron transparent films. 50 μl of 0.1 wt% SBS (30% styrene, Mw=14,000, Scientific Polymer Products, Inc.) dissolved in toluene was deposited on a polished NaCl single crystal substrate placed in a small dish. After solvent evaporation the film was cut into small squares, floated from the salt in water, and each square was collected on a Cu grid.

The microstructure change of low-carbon electrical steels by residual aluminum

1989 ◽  
Vol 47 ◽  
pp. 286-287
Author(s):  
C.K. Hou ◽  
C.T. Hu ◽  
Sanboh Lee
Keyword(s):  
Annealing Treatment ◽  
Low Carbon ◽  
Electrical Steels ◽  
Vacuum Degassing ◽  
Spherical Inclusions ◽  
Residual Aluminum ◽  
Average Grain Size ◽  
The Matrix ◽  
Fine Size ◽  
To Come

The fully processed low-carbon electrical steels are generally fabricated through vacuum degassing to reduce the carbon level and to avoid the need for any further decarburization annealing treatment. This investigation was conducted on eighteen heats of such steels with aluminum content ranging from 0.001% to 0.011% which was believed to come from the addition of ferroalloys.The sizes of all the observed grains are less than 24 μm, and gradually decrease as the content of aluminum is increased from 0.001% to 0.007%. For steels with residual aluminum greater than 0. 007%, the average grain size becomes constant and is about 8.8 μm as shown in Fig. 1. When the aluminum is increased, the observed grains are changed from the uniformly coarse and equiaxial shape to the fine size in the region near surfaces and the elongated shape in the central region. SEM and EDAX analysis of large spherical inclusions in the matrix indicate that silicate is the majority compound when the aluminum propotion is less than 0.003%, then the content of aluminum in compound inclusion increases with that in steel.

Characterisation of planar crystal defects in Y2Fe17Cx (0.6 ≤ x ≤ 1.6) magnetic material by High Resolution Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 774-775
Author(s):  
W. Coene ◽  
F. Hakkens ◽  
T.H. Jacobs ◽  
K.H.J. Buschow
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Permanent Magnets ◽  
Annealing Treatment ◽  
High Resolution Electron Microscopy ◽  
Crystal Defects ◽  
Ordered Structure ◽  
X Ray ◽  
Planar Crystal ◽  
Resolution Electron

Intermetallic compounds of the type RE2Fe17Cx (RE= rare earth element) are promising candidates for permanent magnets. In case of Y2Fe17Cx, the Curie temperature increases from 325 K for x =0 to 550 K for x = 1.6 . X ray and electron diffraction reveal a carbon - induced structural transformation in Y2Fe17Cx from the hexagonal Th2Ni17 - type (x < 0.6 ) to the rhombohedral Th2Zn17 - type ( x ≥ 0.6). Planar crystal defects introduce local sheets of different magnetic anisotropy as compared with the ordered structure, and therefore may have an important impact on the coercivivity mechanism .High resolution electron microscopy ( HREM ) on a Philips CM30 / Super Twin has been used to characterize planar crystal defects in rhombohedral Y2Fe17Cx ( x ≥ 0.6 ). The basal plane stacking sequences are imaged in the [100] - orientation, showing an ABC or ACB sequence of Y - atoms and Fe2 - dumbbells, for both coaxial twin variants, respectively . Compounds resulting from a 3 - week annealing treatment at high temperature ( Ta = 1000 - 1100°C ) contain a high density of planar defects.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

Comparative study of electron transfer on various graphene-metallic contacts

2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Single Layer ◽  
Annealing Treatment ◽  
Single Layer Graphene ◽  
Strain Effect ◽  
Graphene Surface ◽  
Layer Graphene ◽  
Metallic Contacts ◽  
Nonuniform Strain ◽  
Main Factor

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.

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