Effect of Thermal Annealing on Ga-Doped ZnO Films Prepared by Magnetron Sputtering

2007 ◽  
Vol 154 (6) ◽  
pp. H521 ◽  
Author(s):  
J. K. Sheu ◽  
K. W. Shu ◽  
M. L. Lee ◽  
C. J. Tun ◽  
G. C. Chi
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Zno Films ◽  
Doped Zno

Influence of rapid thermal annealing on surface texture-etched Al-doped ZnO films prepared by various magnetron sputtering methods

2012 ◽  
Vol 520 (10) ◽  
pp. 3803-3807 ◽  
Author(s):  
Tadatsugu Minami ◽  
Tomoyasu Hirano ◽  
Toshihiro Miyata ◽  
Jun-ichi Nomoto
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Surface Texture ◽  
Zno Films ◽  
Doped Zno

Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 27 (10) ◽  
pp. 1112-1116 ◽  
Author(s):  
Ke-Wei SUN ◽  
Wan-Cheng ZHOU ◽  
Shan-Shan HUANG ◽  
Xiu-Feng TANG
Keyword(s):  
Magnetron Sputtering ◽  
Zno Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno ◽  
Sputtering Pressure

scholarly journals Nanostructured ZnO/Ag Film Prepared by Magnetron Sputtering Method for Fast Response of Ammonia Gas Detection

Molecules ◽  
2020 ◽  
Vol 25 (8) ◽  
pp. 1899 ◽  
Author(s):  
Yiran Zheng ◽  
Min Li ◽  
Xiaoyan Wen ◽  
Ho-Pui Ho ◽  
Haifei Lu
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Physical Vapor Deposition ◽  
Gas Sensing ◽  
Volume Ratio ◽  
Fast Response ◽  
Gas Detection ◽  
Zno Films ◽  
Zno Film ◽  
Ammonia Gas

Possessing a large surface-to-volume ratio is significant to the sensitive gas detection of semiconductor nanostructures. Here, we propose a fast-response ammonia gas sensor based on porous nanostructured zinc oxide (ZnO) film, which is fabricated through physical vapor deposition and subsequent thermal annealing. In general, an extremely thin silver (Ag) layer (1, 3, 5 nm) and a 100 nm ZnO film are sequentially deposited on the SiO2/Si substrate by a magnetron sputtering method. The porous nanostructure of ZnO film is formed after thermal annealing contributed by the diffusion of Ag among ZnO crystal grains and the expansion of the ZnO film. Different thicknesses of the Ag layer help the formation of different sizes and quantities of hollows uniformly distributed in the ZnO film, which is demonstrated to hold superior gas sensing abilities than the compact ZnO film. The responses of the different porous ZnO films were also investigated in the ammonia concentration range of 10 to 300 ppm. Experimental results demonstrate that the ZnO/Ag(3 nm) sensor possesses a good electrical resistance variation of 85.74% after exposing the sample to 300 ppm ammonia gas for 310 s. Interestingly, a fast response of 61.18% in 60 s for 300 ppm ammonia gas has been achieved from the ZnO/Ag(5 nm) sensor, which costs only 6 s for the response increase to 10%. Therefore, this controllable, porous, nanostructured ZnO film maintaining a sensitive gas response, fabricated by the physical deposition approach, will be of great interest to the gas-sensing community.

Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering

2014 ◽  
Vol 555 ◽  
pp. 93-99 ◽  
Author(s):  
Minehide Kusayanagi ◽  
Azusa Uchida ◽  
Nobuto Oka ◽  
Junjun Jia ◽  
Shin-ichi Nakamura ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Zno Films ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Doped Zno
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