Reactive Ion Etching of Ge[sub 2]Sb[sub 2]Te[sub 5] in CHF[sub 3]∕O[sub 2] Plasma for Nonvolatile Phase-Change Memory Device

2007 ◽  
Vol 10 (5) ◽  
pp. D47 ◽  
Author(s):  
Gaoming Feng ◽  
Bo Liu ◽  
Zhitang Song ◽  
Songlin Feng ◽  
Bomy Chen
Keyword(s):  
Phase Change ◽  
Reactive Ion Etching ◽  
Phase Change Memory ◽  
Memory Device ◽  
Ion Etching ◽  
Change Memory

Reactive ion etching of Si2Sb2Te5in CF4/Ar plasma for a nonvolatile phase-change memory device

2013 ◽  
Vol 34 (5) ◽  
pp. 056001 ◽  
Author(s):  
Juntao Li ◽  
Bo Liu ◽  
Zhitang Song ◽  
Dongning Yao ◽  
Gaoming Feng ◽  
...  
Keyword(s):  
Phase Change ◽  
Reactive Ion Etching ◽  
Phase Change Memory ◽  
Memory Device ◽  
Ion Etching ◽  
Ar Plasma ◽  
Change Memory

Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2 plasma for non-volatile phase-change memory device

2008 ◽  
Vol 516 (21) ◽  
pp. 7871-7874 ◽  
Author(s):  
Cheng Xu ◽  
Bo Liu ◽  
Zhitang Song ◽  
Songlin Feng ◽  
Bomy Chen
Keyword(s):  
Phase Change ◽  
Reactive Ion Etching ◽  
Phase Change Memory ◽  
Memory Device ◽  
Ion Etching ◽  
Volatile Phase ◽  
Change Memory ◽  
O2 Plasma

Reactive Ion Etching of SixSb2Te in CF4/Ar Plasma for Nonvolatile Phase-Change Memory Device

2013 ◽  
Vol 13 (2) ◽  
pp. 1594-1597 ◽  
Author(s):  
Yifeng Gu ◽  
Sannian Song ◽  
Zhitang Song ◽  
Yan Cheng ◽  
Xuyan Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
Reactive Ion Etching ◽  
Phase Change Memory ◽  
Memory Device ◽  
Ion Etching ◽  
Ar Plasma ◽  
Change Memory

CHF3/O2-Based Plasma Reactive Ion Etching of GeTe for Nonvolatile Phase Change Memory

2016 ◽  
Vol 29 (2) ◽  
pp. 98-103 ◽  
Author(s):  
Yangyang Xia ◽  
Bo Liu ◽  
Qing Wang ◽  
Dongning Yao ◽  
Dan Gao ◽  
...  
Keyword(s):  
Phase Change ◽  
Reactive Ion Etching ◽  
Phase Change Memory ◽  
Ion Etching ◽  
Change Memory

Study on Hydrogen-Based Reactive Ion Etching of Ovonic Threshold Switch (OTS) Materials for Phase Change Memory Devices

2021 ◽  
Vol MA2021-01 (30) ◽  
pp. 1023-1023
Author(s):  
Doo San Kim ◽  
You Jung Gill ◽  
Yun Jong Jang ◽  
Ye Eun Kim ◽  
Geun Young Yeom
Keyword(s):  
Phase Change ◽  
Reactive Ion Etching ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Ion Etching ◽  
Threshold Switch ◽  
Change Memory

Study on Hydrogen-Based Reactive Ion Etching of Ovonic Threshold Switch (OTS) Materials for Phase Change Memory Devices

2021 ◽  
Vol 102 (2) ◽  
pp. 39-43
Author(s):  
Doo San Kim ◽  
You Jung Gill ◽  
Yun Jong Jang ◽  
Ye Eun Kim ◽  
Geun Young Yeom
Keyword(s):  
Phase Change ◽  
Reactive Ion Etching ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Ion Etching ◽  
Threshold Switch ◽  
Change Memory

scholarly journals Thermal investigation of a phase change memory device at the nanoscale

2016 ◽  
Vol 745 ◽  
pp. 032098
Author(s):  
Jean-Luc Battaglia ◽  
Indrayush De ◽  
Abdelhak Saci ◽  
Andrzej Kusiak ◽  
Véronique Sousa
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Device ◽  
Thermal Investigation ◽  
Change Memory

Global and local structures of the Ge-Sb-Te ternary alloy system for a phase-change memory device

2006 ◽  
Vol 73 (21) ◽  
Author(s):  
Jae-Hyeon Eom ◽  
Young-Gui Yoon ◽  
Changwon Park ◽  
Hoonkyung Lee ◽  
Jino Im ◽  
...  
Keyword(s):  
Phase Change ◽  
Ternary Alloy ◽  
Phase Change Memory ◽  
Alloy System ◽  
Memory Device ◽  
Ternary Alloy System ◽  
Local Structures ◽  
Global And Local ◽  
Change Memory

High performance of multilevel-cell phase change memory device with good endurance reliability

2019 ◽  
Vol 34 (10) ◽  
pp. 105019
Author(s):  
Yuan-Guang Liu ◽  
Yi-Feng Chen ◽  
Dao-Lin Cai ◽  
Yao-Yao Lu ◽  
Lei Wu ◽  
...  
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Phase Change Memory ◽  
Memory Device ◽  
Change Memory
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