An Explanation of the Superior Radiation Resistance of P-Type Base Si Solar Cells

1961 ◽  
Vol 108 (12) ◽  
pp. 1119 ◽  
Author(s):  
Richard V. Bobcock
Keyword(s):  
Solar Cells ◽  
Radiation Resistance ◽  
Si Solar Cells ◽  
P Type

Boron liquid solution deposited by spray method for p-type emitter formation in crystalline Si solar cells

2016 ◽  
Author(s):  
Piotr Panek ◽  
Barbara Swatowska ◽  
Wojciech Dawidowski ◽  
Mari Juel ◽  
Paweł Zięba
Keyword(s):  
Solar Cells ◽  
Liquid Solution ◽  
Si Solar Cells ◽  
Spray Method ◽  
P Type

IMPACT OF WIDE BANDGAP P-TYPE NC-SI ON THE PERFORMANCE OF A-SI SOLAR CELLS

2002 ◽  
Vol 16 (01n02) ◽  
pp. 57-63 ◽  
Author(s):  
X. DENG ◽  
W. WANG ◽  
S. HAN ◽  
H. POVOLNY ◽  
W. DU ◽  
...  
Keyword(s):  
Solar Cells ◽  
Density Functional ◽  
Nanocrystalline Silicon ◽  
Functional Approach ◽  
Wide Bandgap ◽  
Quantum Size ◽  
Si Solar Cells ◽  
P Type ◽  
The Impact ◽  
Hydrogenated Amorphous

This paper reports the impact of a wide bandgap p-type hydrogenated nanocrystalline silicon (nc-Si:H) on the performances of hydrogenated amorphous silicon (a-Si:H) based solar cells. The p-layer consists of nanometer-sized Si Crystallites and has a wide effective bandgap determined mainly by the quantum size-confinement effect (QSE). By incorporation of this p-layer into the devices we have obtained high performances of a-Si:H top solar cells with V oc = 1.045 V and FF = 70.3%, and much improved mid and bottom a-SiGe:H cells, deposited on stainless steel (SS) substrate. The effects of the band-edge mismatch at the p/i-interface on the I-V characteristics of the solar cells are discussed on the bases on the bases of the density-functional approach and the AMPS model.

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

2019 ◽  
Vol 200 ◽  
pp. 109937 ◽  
Author(s):  
Paul Procel ◽  
Philipp Löper ◽  
Felice Crupi ◽  
Christophe Ballif ◽  
Andrea Ingenito
Keyword(s):  
Solar Cells ◽  
Numerical Simulations ◽  
Si Solar Cells ◽  
Type C ◽  
P Type

Preparation and Evaluation of p-Type Materials for a-Si Solar Cells Using DC Plasma Discharge Deposition of Trimethylboron (B(CH3)3)

1989 ◽  
Vol 149 ◽  
Author(s):  
Benjamin F. Fieselmann ◽  
B. Goldstein
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Plasma Discharge ◽  
Optical And Electrical Properties ◽  
Dc Plasma ◽  
Doping Agent ◽  
Si Solar Cells ◽  
P Type ◽  
Amorphous Sic ◽  
Preparation And Evaluation

ABSTRACTAmorphous SiC p-layers doped with trimethylboron (B(CH3) 3) were prepared with optical and electrical properties superior to those prepared with B2H6. Devices were prepared with efficiencies as high as 11.4% using trimethyl boron. The improved properties of B(CH3)3-doped a-SiC result from the fact that trimethylboron is a more effective doping agent than B2H6 and produces p-layers with a higher bandgap.

Effect of the Hetero-Interface on the Photoresponse of A-Si/C-Si Solar Cells

1994 ◽  
Vol 358 ◽  
Author(s):  
B. Jagannathan ◽  
J. Yi ◽  
R. Wallace ◽  
W. A. Anderson
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Spectral Response ◽  
Forward Bias ◽  
Depletion Region ◽  
Defect States ◽  
Heterojunction Solar Cells ◽  
Si Solar Cells ◽  
Wavelength Absorption ◽  
P Type

ABSTRACTHeterojunction solar cells were fabricated by glow discharge deposition of amorphous silicon on p-type crystalline silicon resulting in a n/i/p structure. Dark I-V-T data on the devices show that the conduction in the forward bias regime (<0.4 volts) for better devices agrees with a multi-tunnelling-capture-emission process. The photoresponse was evaluated (under 100 mW/cm2) for various a-Si thicknesses and substrate resistivities. Spectral response tests showed an increased low wavelength absorption as the a-Si thickness was decreased. The blue response of the devices have better fill-factors than the red response indicating defects at the interface. Further, I-V-T and C-V measurements also corroborate the presence of defect states which seem to prevent the spread of the depletion region in crystalline silicon. The photoresponse was found to be very sensitive to the interface defects and the fill-factors ranged from 0.42, for the sample in which the depletion region had spread, to 0.1 in those where the depletion region had been reduced in thickness by the interface states.

Hole-selective molybdenum oxide as a full-area rear contact to crystalline p-type Si solar cells

2017 ◽  
Vol 56 (8S2) ◽  
pp. 08MB18 ◽  
Author(s):  
Woojun Yoon ◽  
James E Moore ◽  
Eunhwan Cho ◽  
David Scheiman ◽  
Nicole A Kotulak ◽  
...  
Keyword(s):  
Solar Cells ◽  
Molybdenum Oxide ◽  
Si Solar Cells ◽  
P Type
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