The Preparation and Electrical Resistance of Single Crystals of β-US2

1967 ◽  
Vol 114 (9) ◽  
pp. 973 ◽  
Author(s):  
P. K. Smith ◽  
L. Cathey
Keyword(s):  
Single Crystals ◽  
Electrical Resistance

Size Effect and Temperature Dependence of the Electrical Resistance in Bismuth Single Crystals of High Perfection

1981 ◽  
Vol 105 (2) ◽  
pp. 597-604 ◽  
Author(s):  
W. Kraak ◽  
R. Kuhl ◽  
F. Thom ◽  
H. Haefner ◽  
P. Schmidt
Keyword(s):  
Size Effect ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Electrical Resistance

scholarly journals Pressure effect on the electrical resistance of Y0.77Pr0.23Ba2Cu3O7-δ single crystals

2020 ◽  
Keyword(s):  
Critical Temperature ◽  
Hydrostatic Pressure ◽  
Single Crystals ◽  
Electrical Resistance ◽  
Simultaneous Increase ◽  
Critical Temperatures ◽  
Electron Phonon Interaction ◽  
The Matrix ◽  
Critical Temperature Tc ◽  
Effect Of Hydrostatic Pressure

The effect of hydrostatic pressure up to 12 kbar on the electrical resistance in the basal ab-plane of optimally oxygen-doped (δ<0.1) single crystals Y1–xPrxBa2Cu3O7–δ moderately doped with praseodymium (x≈0.23) with a critical temperature Tc≈67 K. Compared to undoped single-crystal YBa2Cu3O7–δ, doping with praseodymium led to a decrease in the critical temperature by ≈24 K with a simultaneous increase in ρab (300 K) by ≈130 μΩcm. In the region of the transition to the superconducting state, several clearly pronounced peaks are observed on the dρ/dT – T curves, which indicates the presence of several phases with different critical temperatures in the sample. The application of high hydrostatic pressure leads to an increase in Tc by about 3 K. This increase slows down with increasing pressure, and the baric derivatives, dTc/dP, decrease from 0.44 K/kbar at atmospheric pressure to 0.14 K/kbar at 11 kbar. The comparatively weak change in the critical temperature under the action of hydrostatic pressure is due to the relatively small value of the orthorhombic distortion, (a–b)/a. The change in the baric derivative dTc/dP upon all-round compression of the sample is due to the fact that, along with an increase in the Debye temperature, the matrix element of the electron-phonon interaction also increases. Possible mechanisms of the effect of high pressure on Tc are discussed taking into account the presence of features in the electronic spectrum of carriers.

scholarly journals Influence of annealing on the electrical resistance of YBCO single crystals

2018 ◽  
Vol 29 (8) ◽  
pp. 6601-6606 ◽  
Author(s):  
R. V. Vovk ◽  
G. Ya. Khadzhai ◽  
Z. F. Nazyrov ◽  
S. N. Kamchatnaya ◽  
A. Feher ◽  
...  
Keyword(s):  
Single Crystals ◽  
Electrical Resistance

scholarly journals Large Electrical Resistance Variation at Low Temperature in Transition Metal-Doped Ge Single Crystals

2015 ◽  
Vol 56 (9) ◽  
pp. 1362-1364 ◽  
Author(s):  
Jiyoun Choi ◽  
Jeongyong Choi ◽  
Sungyoul Choi ◽  
Jongphil Kim ◽  
Sunglae Cho
Keyword(s):  
Low Temperature ◽  
Transition Metal ◽  
Single Crystals ◽  
Electrical Resistance ◽  
Resistance Variation ◽  
Electrical Resistance Variation ◽  
Metal Doped

Electrical resistance of NbSe3-single crystals under uniaxial pressure

1994 ◽  
Vol 203 (1-2) ◽  
pp. 75-80
Author(s):  
Kh.B. Chashka ◽  
V.I. Beletskii ◽  
M.A. Obolenskii
Keyword(s):  
Single Crystals ◽  
Electrical Resistance ◽  
Uniaxial Pressure
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