The Epitaxial Growth of GaP by a Ga[sub 2]O Vapor Transport Mechanism

1964 ◽  
Vol 111 (2) ◽  
pp. 180 ◽  
Author(s):  
C. J. Frosch
Keyword(s):  
Epitaxial Growth ◽  
Transport Mechanism ◽  
Vapor Transport

Epitaxial Growth of ZnTe on ZnSe by Vapor Transport

1967 ◽  
Vol 6 (8) ◽  
pp. 1013-1013 ◽  
Author(s):  
Yoshinobu Tsujimoto ◽  
Masakazu Fukai
Keyword(s):  
Epitaxial Growth ◽  
Vapor Transport

AlN Substrates and Epitaxy Results

2010 ◽  
Vol 645-648 ◽  
pp. 1183-1186
Author(s):  
Yuri N. Makarov ◽  
T.Yu. Chemekova ◽  
O.V. Avdeev ◽  
N. Mokhov ◽  
S.S. Nagalyuk ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Uv Light ◽  
Laser Diodes ◽  
Ultra Violet ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Light Emitting ◽  
Saw Devices ◽  
Bulk Single Crystals

AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth. The substrates may be used for development of devices such as ultra violet (UV) light emitting diodes (LEDs) and laser diodes (LDs), Piezo-Electric Transducers, SAW devices, RF Transistors, etc.

Crystal growth by vapor transport of GeSe, GeSe2, and GeTe and transport mechanism and morphology of GeTe

1972 ◽  
Vol 13-14 ◽  
pp. 393-396 ◽  
Author(s):  
Heribert Wiedemeier ◽  
Eugene A Irene ◽  
Asim K Chaudhuri
Keyword(s):  
Crystal Growth ◽  
Transport Mechanism ◽  
Vapor Transport

Controlling the Epitaxial Growth of Bi2Te3, BiTe, and Bi4Te3 Pure Phases by Physical Vapor Transport

2018 ◽  
Vol 57 (16) ◽  
pp. 10090-10099 ◽  
Author(s):  
Omar Concepción ◽  
Miguel Galván-Arellano ◽  
Vicente Torres-Costa ◽  
Aurelio Climent-Font ◽  
Daniel Bahena ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Pure Phases

Bulk Growth of Large Area SiC Crystals

2016 ◽  
Vol 858 ◽  
pp. 5-10 ◽  
Author(s):  
Adrian R. Powell ◽  
Joseph J. Sumakeris ◽  
Yuri Khlebnikov ◽  
Michael J. Paisley ◽  
R.T. Leonard ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Dislocation Density ◽  
Epitaxial Growth ◽  
Substrate Surface ◽  
Large Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Large Area ◽  
Substrate Quality ◽  
Bulk Growth

The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.

Epitaxial Growth of Hg1 − xCdxTe by Chemical Vapor Transport

1983 ◽  
Vol 130 (1) ◽  
pp. 252-254 ◽  
Author(s):  
Heribert Wiedemeier ◽  
Andrius E. Uzpurvis
Keyword(s):  
Epitaxial Growth ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport
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