Condenser Pressure as an Explanation of Field Dependent Tafel Slopes of High Field Ionic Conduction of Anodic Tantalum Pentoxide Films

1963 ◽  
Vol 110 (6) ◽  
pp. 589 ◽  
Author(s):  
L. Young
Keyword(s):  
High Field ◽  
Ionic Conduction ◽  
Tantalum Pentoxide ◽  
Tafel Slopes ◽  
Field Dependent

High Field Ionic Conduction in Anodic Ta2 O 5 Formed in Oxalic and Phosphoric Electrolytes

1985 ◽  
Vol 132 (4) ◽  
pp. 976-978 ◽  
Author(s):  
I. Montero ◽  
J. M. Albella ◽  
J. M. Martínez‐Duart
Keyword(s):  
High Field ◽  
Ionic Conduction

scholarly journals Reducing dielectric loss and enhancing electrical insulation for multilayer polymer films by nanoconfined ion transport under high poling electric fields

2020 ◽  
Vol 8 (18) ◽  
pp. 6102-6117 ◽  
Author(s):  
Xinyue Chen ◽  
Elshad Allahyarov ◽  
Deepak Langhe ◽  
Michael Ponting ◽  
Ruipeng Li ◽  
...  
Keyword(s):  
Electric Fields ◽  
Polymer Films ◽  
High Field ◽  
Ionic Conduction ◽  
Electric Energy ◽  
Electric Energy Storage ◽  
Conduction Loss ◽  
Impurity Ions ◽  
Energy Storage Applications ◽  
Dielectric Insulation

High-field electric poling locks impurity ions at interfaces in multilayer polymer films, which enhances dielectric insulation and reduces ionic conduction loss for electric energy storage applications.

Theory of Ionic Conduction in Solids Based on the Homogeneous Generation of Defect Pairs and Its Application to Anodic Oxidation

1971 ◽  
Vol 49 (3) ◽  
pp. 416-424 ◽  
Author(s):  
M. J. Dignam ◽  
D. F. Taylor
Keyword(s):  
Anodic Oxidation ◽  
High Field ◽  
Ionic Conduction ◽  
Three Dimensional ◽  
Alkali Halides ◽  
Mean Free Path ◽  
Homogeneous Field ◽  
Frenkel Defect ◽  
Valve Metals ◽  
Field Strengths

The theory for ionic conduction in solids based upon the homogeneous, field-assisted generation of defect pairs is developed in a general, three dimensional form, and its range of applicability is examined. At high field strengths the equations reduce to those of the so-called high field Frenkel defect theory, proposed originally by Bean, Fisher, and Vermilyea. At low field strengths, the steady-state expression reduces to the well-known conduction equation derived originally by Mott for ionic conduction in the alkali halides. At intermediate field strengths, more complicated relationships obtain. The homogeneous generation of defect pairs, whether field or current assisted, is shown to be inapplicable as a mechanism for the high field anodic oxidation of the valve metals, since either type of theory predicts unacceptable behavior for the mean free path of the mobile defects. Any such conduction mechanism can be acceptable only for the case of thick films (» 104 Å).

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