Low-Temperature Deposition of Silicon Oxide Films

1963 ◽  
Vol 110 (5) ◽  
pp. 465 ◽  
Author(s):  
Leslie L. Alt ◽  
Samuel W. Ing ◽  
Karl W. Laendle
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Low Temperature Deposition ◽  
Temperature Deposition

The Deposition of Silicon Oxide Films by LPCVD at Temperatures as Low as 100°C from a New Liquid Source

1992 ◽  
Vol 282 ◽  
Author(s):  
K. Hochberg ◽  
David A. Roberts
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Temperature Sensitive ◽  
Oxide Layers ◽  
Low Temperature Deposition ◽  
Liquid Source ◽  
Temperature Deposition ◽  
Higher Temperature

ABSTRACTA precursor for the LPCVD of silicon oxide films has been developed that extends the low temperature deposition range to 100°C. The chemical, 1,4 disilabutane (DSB), produces silicon oxide depositions similar to those of the higher temperature silane and diethylsilane (DES) processes. Optimum DSB processes require pressures below 300 mTorr, similar to silane, in contrast to DES pressures above 600 mTorr at 350°C. This results in poorer conformalities than those of DES, but the step coverages are still superior to those from silane oxides. The DSB films are low stress, carbon-free oxide layers that are suitable for temperature-sensitive underlayers and substrates such as photoresist, plastics, GaAs, and HgCdTe.

Low Temperature Deposition of High Quality Silicon Oxide Films

1990 ◽  
Author(s):  
Hideo IZAWA ◽  
Yutaka NISHI ◽  
Masaya OKAMOTO ◽  
Hiroshi MORIMOTO ◽  
Mitsuo ISHII
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
High Quality ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Oxide films: low-temperature deposition and crystallization

2003 ◽  
Vol 175 (1) ◽  
pp. 84-87 ◽  
Author(s):  
Sangmoon Park ◽  
Gregory S. Herman ◽  
Douglas A. Keszler
Keyword(s):  
Low Temperature ◽  
Oxide Films ◽  
Low Temperature Deposition ◽  
Temperature Deposition
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