Thin Films Grown on Silicon Surfaces by Excess Nitric Acid Process

1965 ◽  
Vol 112 (12) ◽  
pp. 1251 ◽  
Author(s):  
William B. Glendinning ◽  
Sidney Marshall ◽  
Albert Mark
2015 ◽  
Vol 17 (2) ◽  
pp. 192 ◽  
Author(s):  
Rajubhai K. Mewada ◽  
Samir C. Nimkar

2005 ◽  
Vol 900 ◽  
Author(s):  
A. Deptuła ◽  
Kenneth C Goretta ◽  
Tadeusz Olczak ◽  
Wieslawa Lada ◽  
Andrzej G. Chmielewski ◽  
...  

ABSTRACTTitanium oxide and titanates based on Ba, Sr and Ca were prepared from commercial solutions of TiCl4 and HNO3. The main preparation steps for the sols consisted of elimination of chloride anions by distillation with nitric acid and addition of metal hydroxides for the titanates. Resulting sols were gelled and used to (1) prepare irregularly shaped powders by evaporation; (2) produce by a dipping technique thin films on glass, Ag, or Ti substrates; and (3) produce spherical powders (diameters <100 μm) by solvent extraction. Results of thermal and X-ray-diffraction analyses indicated that the temperatures required to form the various compounds were lower than those necessary to form the compounds by conventional solid-state reactions and comparable to those required with use of organometallic based sol-gel methods. Temperatures of formation could be further reduced by addition of ascorbic acid to the sols.


2013 ◽  
Vol 667 ◽  
pp. 468-476 ◽  
Author(s):  
A. Ishak ◽  
K. Dayana ◽  
Mohamad Rusop

Amorphous carbon (a:C) were successfully deposited on the silicon surfaces via bias assisted pyrolysis-CVD in the range between 350oC to 500oC with constant of negative bias -50V in 1 hour deposition. The heated of palm oil at about 150oC was vaporized then used for deposited onto p-type silicon substrates. The deposited thin films were characterized by using field emission scanning electron microscopic (FESEM), energy dispersive analyser x-ray (EDAX). We have found carbon element at about 0.15 keV from EDAX with surface morphology formed a nano-ball like structure at 450oC of palm oil precursor. These results indicated deformation of physical and structural thin films caused by applied negative bias and the temperature.


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