Measurement of Anodic Oxide Film Thickness by Electroreflectance Interferometry

1969 ◽  
Vol 116 (2) ◽  
pp. 280 ◽  
Author(s):  
B. J. Holden ◽  
F. G. Ullman
Keyword(s):  
Oxide Film ◽  
Film Thickness ◽  
Anodic Oxide ◽  
Anodic Oxide Film ◽  
Oxide Film Thickness

scholarly journals Effect of high-frequency switching electrolysis on film thickness uniformity of anodic oxide film formed on AC8A Aluminum alloy

2010 ◽  
Vol 60 (11) ◽  
pp. 602-607 ◽  
Author(s):  
Tomoharu Yamamoto ◽  
Hiroomi Tanaka ◽  
Masahiro Fujita ◽  
Hidetaka Asoh ◽  
Sachiko Ono
Keyword(s):  
Aluminum Alloy ◽  
Oxide Film ◽  
Film Thickness ◽  
High Frequency ◽  
Anodic Oxide ◽  
Anodic Oxide Film ◽  
Thickness Uniformity

Effects of Anodizing Time on Anodizing of Mg-Al Alloy in Alkaline Solution

2006 ◽  
Vol 510-511 ◽  
pp. 686-689
Author(s):  
Seong Jong Kim ◽  
Jeong Il Kim
Keyword(s):  
Oxide Film ◽  
Film Thickness ◽  
Alkaline Solution ◽  
Anodic Oxide ◽  
Anodic Oxide Film ◽  
Al Alloy ◽  
Active Dissolution ◽  
Dissolution Reaction ◽  
Edx Analyses ◽  
Time Required

This paper investigated the effects of anodizing time on the formation of anodic oxide films on a Mg-Al alloy in alkaline solution. The thickness of the anodic oxide film was increased by increasing the time required to generate the active dissolution reaction. When anodizing at various anodizing time, the potential after passivity increased with time, which implies growth in film thickness. When the anodizing time was varied, the quantity of oxygen increased with time in the white areas (the film), i.e., more film was observed in the SEM and EDX analyses.

Deposited emulsion particles in the pores of aluminum oxide film

1978 ◽  
Vol 36 (1) ◽  
pp. 450-451
Author(s):  
Michio Ashida ◽  
Yasukiyo Ueda
Keyword(s):  
Oxide Film ◽  
Acid Solution ◽  
Barrier Layer ◽  
Colloidal Particles ◽  
Oxalic Acid Solution ◽  
Anodic Oxide ◽  
Anodic Oxide Film ◽  
Carbon Replica ◽  
Sectioning Method ◽  
Thin Sectioning

An anodic oxide film is formed on aluminum in an acidic elecrolyte during anodizing. The structure of the oxide film was observed directly by carbon replica method(l) and ultra-thin sectioning method(2). The oxide film consists of barrier layer and porous layer constructed with fine hexagonal cellular structure. The diameter of micro pores and the thickness of barrier layer depend on the applying voltage and electrolyte. Because the dimension of the pore corresponds to that of colloidal particles, many metals deposit in the pores. When the oxide film is treated as anode in emulsion of polyelectrolyte, the emulsion particles migrate onto the film and deposit on it. We investigated the behavior of the emulsion particles during electrodeposition.Aluminum foils (99.3%) were anodized in either 0.25M oxalic acid solution at 30°C or 3M sulfuric acid solution at 20°C. After washing with distilled water, the oxide films used as anode were coated with emulsion particles by applying voltage of 200V and then they were cured at 190°C for 30 minutes.

Elucidation of the thickness inside the niobium anodic oxide film and its effect on adhesion to polyimide film

Vacuum ◽  
2021 ◽  
pp. 110265
Author(s):  
Munenori Yoshida ◽  
Hiromi Yamanaka ◽  
Kenta Tomori ◽  
Sergei Kulinich ◽  
Syuuichi Maeda ◽  
...  
Keyword(s):  
Oxide Film ◽  
Anodic Oxide ◽  
Polyimide Film ◽  
Anodic Oxide Film

scholarly journals Photoluminescence of ion-synthesized 9R-Si inclusions in SiO2/Si structure: Effect of irradiation dose and oxide film thickness

2021 ◽  
Vol 118 (21) ◽  
pp. 212101
Author(s):  
Alena Nikolskaya ◽  
Alexey Belov ◽  
Alexey Mikhaylov ◽  
Anton Konakov ◽  
David Tetelbaum ◽  
...  
Keyword(s):  
Oxide Film ◽  
Film Thickness ◽  
Irradiation Dose ◽  
Structure Effect ◽  
Oxide Film Thickness

The pore-enlargement and self-lubrication treatment of anodic oxide film of aluminum

Wear ◽  
1996 ◽  
Vol 196 (1-2) ◽  
pp. 214-218 ◽  
Author(s):  
Xu Tao ◽  
Chen Jianmin ◽  
Zhao Jiazheng ◽  
Dang Hongxin
Keyword(s):  
Oxide Film ◽  
Anodic Oxide ◽  
Anodic Oxide Film ◽  
Pore Enlargement

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

ChemInform Abstract: Evidence for an Ideal Transparent Anodic Oxide Film on Zirconium.

ChemInform ◽  
2010 ◽  
Vol 26 (29) ◽  
pp. no-no
Author(s):  
J. L. ORD ◽  
D. J. DE SMET
Keyword(s):  
Oxide Film ◽  
Anodic Oxide ◽  
Anodic Oxide Film
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