Organic Thin-Film Transistors with Low-Temperature AlN Film as Gate Insulator

2007 ◽  
Vol 10 (1) ◽  
pp. H8 ◽  
Author(s):  
Hsiao-Wen Zan ◽  
Kuo-Hsi Yen ◽  
Chien-Hsun Chen ◽  
Pu-Kuan Liu ◽  
Kuo-Hsin Ku ◽  
...  
2005 ◽  
Vol 86 (13) ◽  
pp. 133508 ◽  
Author(s):  
Seungmoon Pyo ◽  
Hyunsam Son ◽  
Kil-Yeong Choi ◽  
Mi Hye Yi ◽  
Sung Kwon Hong

2018 ◽  
Vol 6 (48) ◽  
pp. 13359-13366 ◽  
Author(s):  
Joo-Young Kim ◽  
Ji Whan Kim ◽  
Eun Kyung Lee ◽  
Jeong-Il Park ◽  
Bang-Lin Lee ◽  
...  

This paper reports a polymeric gate insulating material of poly(hydroxy imide) cured at the low temperature of 130 °C for the application to organic thin-film transistors on plastic substrates exhibiting high breakdown voltage and no hysteresis.


2019 ◽  
Vol 85 (1) ◽  
pp. 277-283 ◽  
Author(s):  
Rawad K. Hallani ◽  
Maximilian Moser ◽  
Helen Bristow ◽  
Maud V. C. Jenart ◽  
Hendrik Faber ◽  
...  

2018 ◽  
Vol 19 (2) ◽  
pp. 71-80 ◽  
Author(s):  
Chuan Liu ◽  
Xuying Liu ◽  
Takeo Minari ◽  
Masayuki Kanehara ◽  
Yong-Young Noh

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