Green Laser Crystallization of a-Si Films Using Preformed a-Si Lines

2019 ◽  
Vol 3 (8) ◽  
pp. 185-191 ◽  
Author(s):  
Ihor Brunets ◽  
Jisk Holleman ◽  
Alexey Y. Kovalgin ◽  
Tom Aarnink ◽  
Arjen Boogaard ◽  
...  
Keyword(s):  
Green Laser ◽  
Laser Crystallization ◽  
Si Films

scholarly journals Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy

2011 ◽  
Vol 2011 ◽  
pp. 1-14 ◽  
Author(s):  
Kuninori Kitahara ◽  
Toshitomo Ishii ◽  
Junki Suzuki ◽  
Takuro Bessyo ◽  
Naoki Watanabe
Keyword(s):  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Raman Microscopy ◽  
Laser Crystallization ◽  
Local Vibration ◽  
Optical Phonon Mode ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Si Films

Raman microscopy was applied to characterize polycrystalline silicon (poly-Si) on glass substrates for application as thin-film transistors (TFTs) integrated on electronic display panels. This study examines the crystallographic defects and stress in poly-Si films grown by industrial techniques: solid phase crystallization and excimer laser crystallization (ELC). To distinguish the effects of defects and stress on the optical-phonon mode of the Si–Si bond, a semiempirical analysis was performed. The analysis was compared with defect images obtained through electron microscopy and atomic force microscopy. It was found that the Raman intensity for the ELC film is remarkably enhanced by the hillocks and ridges located around grain boundaries, which indicates that Raman spectra mainly reflect the situation around grain boundaries. A combination of the hydrogenation of films and the observation of the Si-hydrogen local-vibration mode is useful to support the analysis on the defects. Raman microscopy is also effective for detecting the plasma-induced damage suffered during device processing and characterizing the performance of Si layer in TFTs.

Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

MRS Bulletin ◽  
2006 ◽  
Vol 31 (6) ◽  
pp. 461-465 ◽  
Author(s):  
P.C. van der Wilt ◽  
M.G. Kane ◽  
A.B. Limanov ◽  
A.H. Firester ◽  
L. Goodman ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Defect Density ◽  
Solid Phase ◽  
Flexible Substrates ◽  
Full Potential ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
Si Films

AbstractLow-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities. Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.

Excimer-Laser Crystallization of Patterned Si Films At High Temperatures Via Artificially Controlled Super-Lateral Growth

1995 ◽  
Vol 397 ◽  
Author(s):  
H. Jin Song ◽  
James S. Im
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Excimer Laser ◽  
Lateral Growth ◽  
Laser Crystallization ◽  
High Substrate ◽  
Temperature Method ◽  
Main Portion ◽  
Si Films ◽  
Rate Ratios

ABSTRACTBased on the artificially controlled super-lateral growth approach, we have developed a novel excimer-laser-based high-substrate-temperature method for producing single-crystal Si islands on SiO2. By irradiating a photolithographically preconfigured sample, complete melting of an Si film is induced only at precisely predesignated locations within patterned and physically isolated islands. An intentionally incompletely melted section within each island initiates lateral growth of crystalline grains. A “bottleneck” portion of the island permits only one of the laterally growing grains to propagate into the main portion of the island. The low nucleation-to-growth-rate ratios that are attainable with high substrate temperatures (1000–1200 °C) can lead to nearly unlimited lateral growth distances; with a proper combination of the substrate temperature and the island dimension, the main area of an island—up to 50×50 μm2 in area—is readily converted into a large single-crystal region.

Excimer-Laser Crystallization of Si Films Via Bi-Directional Irradiation of Dual-Layer Films on Transparent Substrates

1995 ◽  
Vol 397 ◽  
Author(s):  
Jung H. Yoon ◽  
James S. Im
Keyword(s):  
Excimer Laser ◽  
Thermal Environment ◽  
Thermal Evolution ◽  
Bottom Layer ◽  
Lateral Growth ◽  
Laser Crystallization ◽  
Projection System ◽  
Substrate Heating ◽  
Excimer Laser Crystallization ◽  
Si Films

ABSTRACTIn this paper, we report on a new excimer-laser crystallization (ELC) method that is highly effective in extending the super-lateral growth (SLG) distance and which does not involve any preheating of the substrate. The technique utilizes bi-directional irradiation of a dual layer Si film stack (separated by an oxide layer) deposited on a quartz wafer. The top layer is irradiated with a projection system which transfers a mask image in order to produce grain-boundary-location-controlled (GLC) regions, and the bottom layer, upon irradiation with a uniform beam, acts as a medium that favorably affects the thermal evolution of the top layer. The technique is effective and attractive in that the heating is spatially and temporally localized in an optimal manner. The thermal environment required for extending the SLG distance, as is induced by the melting and solidification of the bottom layer, is physically regulated by the melting temperature of Si, and the enthalpy difference between liquid and solid can be used to initially store and subsequently release heat. Using the method, we were able to attain GLC regions with widths up to 10 μm in 1000-Å Si films without any substrate heating. We elaborate on the applicability of the method to various artificially controlled super-lateral growth (ACSLG) techniques, and discuss process optimization by means of varying the multilayer configuration.

In-Situ Crystallization and Doping of a-Si Film by Means of Spin-On-Glass

1994 ◽  
Vol 345 ◽  
Author(s):  
Tomoyuki Sakoda ◽  
Chang-Dong Kim ◽  
Masakiyo Matsumura
Keyword(s):  
Laser Crystallization ◽  
Hole Conduction ◽  
Electron Field ◽  
In Situ Crystallization ◽  
Excimer Laser Crystallization ◽  
Doping Technique ◽  
Amorphous Si ◽  
Dopant Atoms ◽  
Si Films

AbstractA novel technique has been proposed for selective and in -situ excimer-laser crystallization and doping to thin poly-Si films. Dopant atoms are supplied, during the Si laser crystallization process, to the Si film on glass from the doped SOG (spin-on-glass) film coated on the top. Conductivity of the processed film was increased to more than 10S/cm from about 10−8S/cm of the starting film. This technique has been applied to the bottom gate amorphous-Si TFTs with self-aligned poly-Si source and drain. The electron field-effect mobility was 1.0cm2/Vs and the on/off current ratio was more than 106. No parasitic effects were observed, and the hole conduction was effectively. This in-situ crystallization and doping technique can also be applied to the top gate a-Si TFT process.

In-Situ Crystallization and Doping of a-Si film by means of Spin-On-Glass

1994 ◽  
Vol 336 ◽  
Author(s):  
Tomoyuki Sakoda ◽  
Chang-Dong Kim ◽  
Masakiyo Matsumura
Keyword(s):  
Laser Crystallization ◽  
Hole Conduction ◽  
Electron Field ◽  
In Situ Crystallization ◽  
Excimer Laser Crystallization ◽  
Doping Technique ◽  
Amorphous Si ◽  
Dopant Atoms ◽  
Si Films

ABSTRACTA novel technique has been proposed for selective and in-situ excimer-laser crystallization and doping to thin poly-Si films. Dopant atoms are supplied, during the Si laser crystallization process, to the Si film on glass from the doped SOG (spin-on-glass) film coated on the top. Conductivity of the processed film was increased to more than 10S/cm from about 10−8S/cm of the starting film. This technique has been applied to the bottom gate Amorphous-Si TFTs with self-aligned poly-Si source and drain. The electron field-effect mobility was 1.0cm2/Vs and the on/off current ratio was more than 106. No parasitic effects were observed, and the hole conduction was effectively suppressed. This in-situ crystallization and doping technique can also be applied to the top gate a-Si TFT process.

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