Suppression of Structural Imperfection in Strained Si Thin Film by Utilizing SiGe Bulk Substrate

2019 ◽  
Vol 3 (7) ◽  
pp. 299-302
Author(s):  
Noritaka Usami ◽  
Yoshitaro Nose ◽  
Kozo Fujiwara ◽  
Kazuo Nakajima
Keyword(s):  
Thin Film ◽  
Strained Si ◽  
Structural Imperfection ◽  
Bulk Substrate ◽  
Si Thin Film

Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate

2006 ◽  
Vol 88 (22) ◽  
pp. 221912 ◽  
Author(s):  
N. Usami ◽  
Y. Nose ◽  
K. Fujiwara ◽  
K. Nakajima
Keyword(s):  
Strained Si ◽  
Structural Imperfection ◽  
Bulk Substrate

Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization

2003 ◽  
Vol 16 (3-4) ◽  
pp. 400-403
Author(s):  
Do Young Kim ◽  
Ji Sim Jung ◽  
Young Rae Jang ◽  
Kun Ho Yoo ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Si Thin Film

Molecular Dynamics Studies of Surface Nucleation and Crystal Growth of Si on SiO2 Substrates

2005 ◽  
Vol 899 ◽  
Author(s):  
Byoung-Min Lee ◽  
Hong Koo Baik ◽  
Takahide Kuranaga ◽  
Shinji Munetoh ◽  
Teruaki Motooka
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Crystal Growth ◽  
Surface Energy ◽  
Md Simulations ◽  
Lower Surface ◽  
Surface Nucleation ◽  
Lower Surface Energy ◽  
Potential Parameters ◽  
Si Thin Film

AbstractMolecular dynamics (MD) simulations of atomistic processes of nucleation and crystal growth of silicon (Si) on SiO2 substrate have been performed using the Tersoff potential based on a combination of Langevin and Newton equations. A new set of potential parameters was used to calculate the interatomic forces of Si and oxygen (O) atoms. It was found that the (111) plane of the Si nuclei formed at the surface was predominantly parallel to the surface of MD cell. The values surface energy for (100), (110), and (111) planes of Si at 77 K were calculated to be 2.27, 1.52, and 1.20 J/m2, respectively. This result suggests that, the nucleation leads to a preferred (111) orientation in the poly-Si thin film at the surface, driven by the lower surface energy.

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

2013 ◽  
Vol 103 (20) ◽  
pp. 203501 ◽  
Author(s):  
Uio-Pu Chiou ◽  
Jia-Min Shieh ◽  
Chih-Chao Yang ◽  
Wen-Hsien Huang ◽  
Yo-Tsung Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Metal Gate ◽  
Si Thin Film ◽  
Nanocrystalline Si

Influence of melt depth in laser crystallized poly-Si thin film transistors

1997 ◽  
Vol 82 (8) ◽  
pp. 4086-4094 ◽  
Author(s):  
S. D. Brotherton ◽  
D. J. McCulloch ◽  
J. P. Gowers ◽  
J. R. Ayres ◽  
M. J. Trainor
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Si Thin Film
Sign in / Sign up

Export Citation Format

Share Document