Isolated Carbon Confinement Methodology for Ultrathin Boron Profiles with Enhanced Conductivity in Sub-50 NM Strained Layers of Silicon Germanium

2019 ◽  
Vol 3 (7) ◽  
pp. 161-172
Author(s):  
Darwin Enicks ◽  
Gerald Oleszek
Keyword(s):  
Silicon Germanium ◽  
Strained Layers ◽  
Enhanced Conductivity

Well-Resolved Band-Edge Photoluminescence from Strained Si1–xGex Layers Grown by Rapid Thermal Chemical Vapor Deposition

1991 ◽  
Vol 220 ◽  
Author(s):  
J. C. Sturm ◽  
P. V. Schwartz ◽  
H. Manoharan ◽  
Q. Mi ◽  
L. C. Lenchyshyn ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Chemical Vapor ◽  
Band Edge ◽  
Strained Layers ◽  
Alloy Scattering ◽  
Thermal Chemical Vapor Deposition ◽  
Band Edge Luminescence

ABSTRACTWell resolved band-edge luminescence of excitons in silicon-germanium alloy strained layers, quantum wells, and superlattices has been observed in films grown by Rapid Thermal Chemical Vapor Deposition. The signal is due to bound excitons at low temperatures and free excitons at higher temperatures, and has a strong no-phonon signal which is caused by alloy scattering. Bandgaps inferred from photoluminescence agree well with those measured by absorption spectroscopy, inferring that a no-phonon process dominates the band-edge absorption.

Silicon Germanium Strained Layers and Heterostructures

2004 ◽  
Vol T114 ◽  
pp. 22-30
Author(s):  
M Willander ◽  
O Nur ◽  
S C Jain
Keyword(s):  
Silicon Germanium ◽  
Strained Layers

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures

2001 ◽  
Vol 171 (7) ◽  
pp. 689 ◽  
Author(s):  
Yu.B. Bolkhovityanov ◽  
Oleg P. Pchelyakov ◽  
S.I. Chikichev
Keyword(s):  
Silicon Germanium

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

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