Analysis of Transition Regime Flows in Low Pressure Chemical Vapor Deposition Reactors Using the Direct Simulation Monte Carlo Method

1992 ◽  
Vol 139 (8) ◽  
pp. 2264-2273 ◽  
Author(s):  
Daniel G. Coronell ◽  
Klavs F. Jensen
Keyword(s):  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Monte Carlo Method ◽  
Vapor Deposition ◽  
Direct Simulation Monte Carlo ◽  
Chemical Vapor ◽  
Transition Regime ◽  
Direct Simulation ◽  
Pressure Chemical ◽  
Simulation Monte Carlo

Study on the Deposition Profile Characteristics in the Micron-Scale Trench Using Direct Simulation Monte Carlo Method

1998 ◽  
Vol 120 (2) ◽  
pp. 296-302 ◽  
Author(s):  
Masato Ikegawa ◽  
Jun’ichi Kobayashi ◽  
Morihisa Maruko
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Boundary Conditions ◽  
Gas Flow ◽  
Direct Simulation Monte Carlo ◽  
Low Pressure ◽  
Sputter Deposition ◽  
Direct Simulation ◽  
Simulation Monte Carlo ◽  
Profile Characteristics

As integrated circuits are advancing toward smaller device features, step-coverage in submicron trenches and holes in thin film deposition are becoming of concern. Deposition consists of gas flow in the vapor phase and film growth in the solid phase. A deposition profile simulator using the direct simulation Monte Carlo method has been developed to investigate deposition profile characteristics on small trenches which have nearly the same dimension as the mean free path of molecules. This simulator can be applied to several deposition processes such as sputter deposition, and atmospheric- or low-pressure chemical vapor deposition. In the case of low-pressure processes such as sputter deposition, upstream boundary conditions of the trenches can be calculated by means of rarefied gas flow analysis in the reactor. The effects of upstream boundary conditions, molecular collisions, sticking coefficients, and surface migration on deposition profiles in the trenches were clarified.

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