Low Pressure Chemical Vapor Deposition of Silicon Carbide from Ditertiarybutylsilane

1993 ◽  
Vol 140 (10) ◽  
pp. 3001-3007 ◽  
Author(s):  
J. M. Grow ◽  
R. A. Levy ◽  
M. Bhaskaran ◽  
H. J. Boeglin ◽  
R. Shalvoy
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Low Pressure Chemical Vapor Deposition of Silicon Carbide from Diethylsilane

1993 ◽  
Vol 140 (3) ◽  
pp. 851-854 ◽  
Author(s):  
J. M. Grow ◽  
R. A. Levy ◽  
Y. T. Shi ◽  
R. L. Pfeffer
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

ChemInform Abstract: Low Pressure Chemical Vapor Deposition of Silicon Carbide from Ditertiarybutylsilane.

ChemInform ◽  
2010 ◽  
Vol 25 (6) ◽  
pp. no-no
Author(s):  
J. M. GROW ◽  
R. A. LEVY ◽  
M. BHASKARAN ◽  
H. J. BOEGLIN ◽  
R. SHALVOY
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Heteropolytype Growth of Beta Silicon Carbide on Alpha Silicon Carbide by Low Pressure Chemical Vapor Deposition at 1150 C

1992 ◽  
Vol 281 ◽  
Author(s):  
K. J. Irvine ◽  
M. G. Spencer ◽  
V. A. Dmitriev
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Critical Thickness ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Temperature Growth ◽  
Pressure Chemical

ABSTRACTWe report on the low temperature growth of heteropolytype junctions of 3C-SiC on 6H-SiC by low pressure chemical vapor deposition. In this work we have observed the epitaxial layers to be single crystal below a critical thickness limit which depends on growth temperature. Films thicker than this limit are polycrystalline. At 1150 C we have found the critical thickness to be approximately 2500 angstroms.

ChemInform Abstract: Low Pressure Chemical Vapor Deposition of Silicon Carbide from Diethylsilane.

ChemInform ◽  
2010 ◽  
Vol 24 (28) ◽  
pp. no-no
Author(s):  
J. M. GROW ◽  
R. A. LEVY ◽  
Y. T. SHI ◽  
R. L. PFEFFER
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical
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