Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn- and C-Doped InGaAs∕AlGaAs Quantum Well Laser Structures

2006 ◽  
Vol 153 (9) ◽  
pp. G879 ◽  
Author(s):  
P. L. Gareso ◽  
M. Buda ◽  
M. Petravic ◽  
H. H. Tan ◽  
C. Jagadish
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Quantum Well Laser

Improvement of GaAs/AlGaAs quantum well laser diodes by rapid thermal annealing

1994 ◽  
Vol 23 (1) ◽  
pp. 1-6 ◽  
Author(s):  
K. Xie ◽  
C. R. Wie ◽  
J. A. Varriano ◽  
G. W. Wicks
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Laser Diodes ◽  
Quantum Well Laser

Chemical Effects in Ion Implantation Induced Quantum Well Intermixing

2000 ◽  
Vol 647 ◽  
Author(s):  
Todd W. Simpson ◽  
Paul G. Piva ◽  
Ian V. Mitchell
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Blue Shift ◽  
Quantum Well Intermixing ◽  
Chemical Effects ◽  
M 31 ◽  
Shift Data ◽  
Fluence Dependence

AbstractIon implantation followed by rapid thermal annealing is used to induce layer intermixing and thus selectively blue-shift the emission wavelength of InP-based quantum well hetero- structures. The intermixing is greatly enhanced over thermal intermixing due to the supersaturation of defects. The magnitude of the observed blue-shift has been studied previously as a function of ion fluence and ion mass: the dependence on ion mass is well established, with heavier ions producing a larger shift. We show here that chemical effects can also play a significant role in determining the induced blue-shift. Data are presented from the implantation of the similar mass ions; aluminum (m~27), silicon (m~28) and phosphorus (m~31). The P- induced blue shift displays a monotonic increase with fluence, consistent with previous studies; however, the fluence dependence of Al- and Si-induced blue-shifts both deviate significantly from the behaviour for P. These results have important implications for attempts to scale intermixing behaviour with ion mass.

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