Charge Trapping: A Major Reliability Challenge for High-k Gate Dielectrics

T.P. Ma; Sharon Wang; Liyang Song; Huiming Bu

doi:10.1149/1.2209319

Charge Trapping: A Major Reliability Challenge for High-k Gate Dielectrics

ECS Transactions ◽

10.1149/1.2209319 ◽

2019 ◽

Vol 1 (5) ◽

pp. 733-743 ◽

Cited By ~ 1

Author(s):

T.P. Ma ◽

Sharon Wang ◽

Liyang Song ◽

Huiming Bu

Keyword(s):

Gate Dielectrics ◽

Charge Trapping ◽

High K ◽

Reliability Challenge

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Charge Trapping: A Major Reliability Challenge for High-k Gate Dielectrics

ECS Meeting Abstracts ◽

10.1149/ma2005-02/13/572 ◽

2005 ◽

Keyword(s):

Gate Dielectrics ◽

Charge Trapping ◽

High K ◽

Reliability Challenge

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Charge Trapping in High-k Gate Dielectrics: A Recent Understanding

ECS Meeting Abstracts ◽

10.1149/ma2006-01/9/407 ◽

2006 ◽

Keyword(s):

Gate Dielectrics ◽

Charge Trapping ◽

High K

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Charge trapping characteristics in high-k gate dielectrics on germanium

Thin Solid Films ◽

10.1016/j.tsf.2008.08.063 ◽

2008 ◽

Vol 517 (1) ◽

pp. 163-166 ◽

Cited By ~ 9

Author(s):

C. Mahata ◽

M.K. Bera ◽

P.K. Bose ◽

C.K. Maiti

Keyword(s):

Gate Dielectrics ◽

Charge Trapping ◽

High K

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Charge trapping by oxygen-related defects in HfO/sub 2/-based high-k gate dielectrics

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493186 ◽

2005 ◽

Author(s):

K. Yamabe ◽

M. Goto ◽

K. Higuchi ◽

A. Uedono ◽

K. Shiraishi ◽

...

Keyword(s):

Gate Dielectrics ◽

Charge Trapping ◽

High K

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Effective minimization of charge trapping in high-K gate dielectrics with an ultra-short pulse technique

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1435036 ◽

2005 ◽

Cited By ~ 1

Author(s):

Yuegang Zhao ◽

C.D. Young ◽

M. Pendley ◽

K. Matthews ◽

Byoung Hun Lee ◽

...

Keyword(s):

Gate Dielectrics ◽

Short Pulse ◽

Charge Trapping ◽

Pulse Technique ◽

High K ◽

Ultra Short Pulse

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Charge Trapping in High-k Gate Dielectrics: A Recent Understanding

ECS Transactions ◽

10.1149/1.2193904 ◽

2019 ◽

Vol 2 (1) ◽

pp. 311-328 ◽

Cited By ~ 6

Author(s):

Rosa María Luna-Sánchez ◽

Ignacio González-Martínez

Keyword(s):

Gate Dielectrics ◽

Charge Trapping ◽

High K

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Modeling of Charge-Trapping/Detrapping-Induced Voltage Instability in High- $k$ Gate Dielectrics

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2011.2178073 ◽

2012 ◽

Vol 12 (1) ◽

pp. 152-157 ◽

Cited By ~ 2

Author(s):

Sahar Sahhaf ◽

Kris De Brabanter ◽

Robin Degraeve ◽

Johan A. K. Suykens ◽

Bart De Moor ◽

...

Keyword(s):

Gate Dielectrics ◽

Charge Trapping ◽

Induced Voltage ◽

Voltage Instability ◽

High K

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In-plane-gate flexible single-crystalline silicon thin-film transistors with high-k gate dielectrics on plastic substrates

AIP Advances ◽

10.1063/1.5045521 ◽

2019 ◽

Vol 9 (1) ◽

pp. 015111 ◽

Cited By ~ 1

Author(s):

Yibo Zhang ◽

Shihui Yu ◽

Kuibo Lan ◽

Lingxia Li ◽

Guoxuan Qin

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Crystalline Silicon ◽

Gate Dielectrics ◽

Single Crystalline Silicon ◽

Silicon Thin Film ◽

Single Crystalline ◽

Plastic Substrates ◽

High K

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Plasmon-Phonon Resonance at Gate-Electrode/Gate-Dielectric Interface on Carrier Mobility of Organic TFTs with High-k Gate Dielectrics

Applied Surface Science ◽

10.1016/j.apsusc.2021.150374 ◽

2021 ◽

pp. 150374

Author(s):

Y.X. Ma ◽

H. Su ◽

W.M. Tang ◽

P.T. Lai

Keyword(s):

Carrier Mobility ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Gate Electrode ◽

Dielectric Interface ◽

High K

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High K gate dielectrics for the silicon industry

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) ◽

10.1109/iwgi.2001.967545 ◽

2002 ◽

Cited By ~ 8

Author(s):

L. Manchanda ◽

B. Busch ◽

M.L. Green ◽

M. Morris ◽

R.B. van Dover ◽

...

Keyword(s):

Gate Dielectrics ◽

High K

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