High-Temperature Processing Effects on Lanthanum Silicate Gate Dielectric MIS Devices

2019 ◽  
Vol 1 (5) ◽  
pp. 227-238
Author(s):  
Daniel J. Lichtenwalner ◽  
Jesse Jur ◽  
Naoya Inoue ◽  
Angus Kingon
Keyword(s):  
High Temperature ◽  
Gate Dielectric ◽  
High Temperature Processing ◽  
Processing Effects ◽  
Mis Devices ◽  
Lanthanum Silicate

High-Temperature Stability of Lanthanum Silicate Gate Dielectric MIS Devices with Ta and TaN Electrodes

2006 ◽  
Vol 153 (9) ◽  
pp. F210 ◽  
Author(s):  
Daniel J. Lichtenwalner ◽  
Jesse S. Jur ◽  
Rashmi Jha ◽  
Naoya Inoue ◽  
Bei Chen ◽  
...  
Keyword(s):  
High Temperature ◽  
Gate Dielectric ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Mis Devices ◽  
Lanthanum Silicate

Processing Impact on Electrical Properties of Lanthanum Silicate Thin Films

2006 ◽  
Vol 917 ◽  
Author(s):  
Jesse Stephen Jur ◽  
Daniel J. Lichtenwalner ◽  
Naoya Inoue ◽  
Angus I. Kingon
Keyword(s):  
Electrical Properties ◽  
Oxygen Concentration ◽  
Gate Dielectric ◽  
Fixed Charge ◽  
Gate Stacks ◽  
Gate Electrode ◽  
Capping Layer ◽  
Mis Devices ◽  
Lanthanum Silicate ◽  
Defect Densities

AbstractThe consequence of tungsten metal purity on the electrical properties of an annealed MOS gate stack with a lanthanum silicate gate dielectric has been investigated. Optimization of the electrical and physical properties of a device with any given dielectric requires the proper choice of metal gate electrode and capping layer. This study is intended to show the importance of tungsten processing optimization and subsequent effects on the equivalent oxide thickness, fixed charge, and density of interface states of La-Si-O gate dielectric MIS devices. In the experiment, La-Si-O films of physical thickness of 1.6 nm were deposited on a Si substrate, subsequently depositing TaN as the gate electrode and W as a capping layer. A post metallization anneal in flowing nitrogen at 1000°C for short times resulted in widely different measured properties of the MIS devices, dependent on the quality of the tungsten deposited. XRD and SIMS profiles of the gate stacks showed a clear relationship between concentration of oxygen and processing of the tungsten. A 1000°C, 10 sec anneal resulted in an EOT change from 1.1 nm to 2.2 nm on gate stacks with low and high oxygen concentration in the tungsten, respectively. Defect densities decreased with increased anneal temperature and time, and annealing with low oxygen-concentration tungsten resulted in higher effective fixed charge. SIMS data suggests that oxygen in the tungsten diffuses to the Si/La-Si-O interface through the TaN electrode, resulting in the observed differences in the defect densities and EOT.

scholarly journals High temperature processing effects on the properties of fowl meat gels

1997 ◽  
Vol 76 (5) ◽  
pp. 774-779 ◽  
Author(s):  
L Voller-Reasonover ◽  
IY Han ◽  
JC Acton ◽  
TC Titus ◽  
WC Bridges ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Processing ◽  
Processing Effects

AFM study of the dynamics of α-alumina surface faceting during high-temperature processing

1995 ◽  
Vol 53 ◽  
pp. 334-335 ◽  
Author(s):  
Michael W. Bench ◽  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
High Temperature ◽  
Thin Foil ◽  
Sem Analysis ◽  
Conductive Coatings ◽  
Force Microscopy ◽  
Minimal Sample ◽  
Atomic Force ◽  
Formation And Evolution ◽  
High Temperature Processing ◽  
Nominal Surface

To gain a better understanding of the surface faceting that occurs in α-alumina during high temperature processing, atomic force microscopy (AFM) studies have been performed to follow the formation and evolution of the facets. AFM was chosen because it allows for analysis of topographical details down to the atomic level with minimal sample preparation. This is in contrast to SEM analysis, which typically requires the application of conductive coatings that can alter the surface between subsequent heat treatments. Similar experiments have been performed in the TEM; however, due to thin foil and hole edge effects the results may not be representative of the behavior of bulk surfaces.The AFM studies were performed on a Digital Instruments Nanoscope III using microfabricated Si3N4 cantilevers. All images were recorded in air with a nominal applied force of 10-15 nN. The alumina samples were prepared from pre-polished single crystals with (0001), , and nominal surface orientations.

Influence of Enzyme Activity of Bacteria and Leucocytes in Raw Milk on Age Gelation after UHT Processing

1984 ◽  
Vol 47 (2) ◽  
pp. 105-107 ◽  
Author(s):  
BARBARA P. KEOGH ◽  
G. PETTINGILL
Keyword(s):  
Enzyme Activity ◽  
High Temperature ◽  
Inhibitory Action ◽  
Raw Milk ◽  
Bacterial Counts ◽  
High Temperature Processing ◽  
The Relationship ◽  
Ultra High Temperature

An investigation was undertaken into the relationship between the enzyme activity of cells harvested from raw milk and time taken for age gelation (TAG) to occur in the milk after ultra-high-temperature processing. It was shown that there was no relationship between the TAG and the bacterial counts on milk agar at 30°C or 7°C nor was there a relationship between the counts and the level of enzyme activity of the harvested cells. There was, however, a significant correlation between the level of enzyme activity of the harvested cells and the TAG. When extra bovine leucocytes were added to raw milk before processing, the TAG was increased. This suggested that there was an inhibitory action of leucocytes in development of age gelation.

Interpretation of macropore shape transformation in crystalline silicon upon high temperature processing

2010 ◽  
Vol 108 (7) ◽  
pp. 074902 ◽  
Author(s):  
Moustafa Y. Ghannam ◽  
Abdulazeez S. Alomar ◽  
Jef Poortmans ◽  
Robert P. Mertens
Keyword(s):  
High Temperature ◽  
Crystalline Silicon ◽  
Shape Transformation ◽  
High Temperature Processing

Effect of high-pressure/high-temperature processing on chemical pectin conversions in relation to fruit and vegetable texture

2009 ◽  
Vol 115 (1) ◽  
pp. 207-213 ◽  
Author(s):  
Ans De Roeck ◽  
Thomas Duvetter ◽  
Ilse Fraeye ◽  
Iesel Van der Plancken ◽  
Daniel Ndaka Sila ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Fruit And Vegetable ◽  
High Pressure High Temperature ◽  
High Temperature Processing

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO2 Gate Dielectric

2018 ◽  
Vol 924 ◽  
pp. 482-485
Author(s):  
Min Seok Kang ◽  
Kevin Lawless ◽  
Bong Mook Lee ◽  
Veena Misra
Keyword(s):  
Threshold Voltage ◽  
Interfacial Layer ◽  
Field Effect ◽  
Lanthanum Oxide ◽  
Gate Dielectric ◽  
High Mobility ◽  
High Threshold ◽  
Field Effect Mobility ◽  
The Impact ◽  
Lanthanum Silicate

We investigated the impact of an initial lanthanum oxide (La2O3) thickness and forming gas annealing (FGA) conditions on the MOSFET performance. The FGA has been shown to dramatically improve the threshold voltage (VT) stability of 4H-SiC MOSFETs. The FGA process leads to low VTshift and high field effect mobility due to reduction of the interface states density as well as traps by passivating the dangling bonds and active traps in the Lanthanum Silicate dielectrics. By optimizing the La2O3interfacial layer thickness and FGA condition, SiC MOSFETs with high threshold voltage and high mobility while maintaining minimal VTshift are realized.

scholarly journals Changes in Ginsenoside Compositions by High Temperature Processing under Various Soaking Conditions

2017 ◽  
Vol 23 (5) ◽  
pp. 689-696
Author(s):  
Gwi Yeong Jang ◽  
Yoon Jeong Lee ◽  
Meishan Li ◽  
Min Young Kim ◽  
Sang Hoon Lee ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Processing
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