Effect of Electrolyte Concentration on Anodic Nanoporous Layer Growth for n-InP in Aqueous KOH

2019 ◽  
Vol 2 (5) ◽  
pp. 131-141 ◽  
Author(s):  
Robert Lynch ◽  
Colm O'Dwyer ◽  
D. N. Buckley ◽  
David Sutton ◽  
Simon Newcomb
Keyword(s):  
Electrolyte Concentration ◽  
Layer Growth ◽  
Nanoporous Layer

Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

MODELING THE NORMAL SPECTRAL EMISSIVITY OF BRASS H62 AT 800–1100 K DURING OXIDE LAYER GROWTH

2018 ◽  
Vol 49 (15) ◽  
pp. 1445-1458
Author(s):  
Deheng Shi ◽  
Fenghui Zou ◽  
Zunlue Zhu ◽  
Jinfeng Sun
Keyword(s):  
Oxide Layer ◽  
Spectral Emissivity ◽  
Layer Growth ◽  
Normal Spectral Emissivity

Study on the influence on the formation of highly ordered porous anodic aluminia membrane

2017 ◽  
Author(s):  
O Pong-Sik ◽  
Ryang Se-Hun ◽  
Sin Gum-Chol ◽  
Hwang Guk-Nam ◽  
yongson hong
Keyword(s):  
Pore Diameter ◽  
Electrolyte Concentration ◽  
Aao Template ◽  
Alumina Template ◽  
Wide Range ◽  
Electrochemical Mechanism ◽  
Porous Anodic Alumina Template ◽  
Ordered Porous ◽  
Anodic Alumina Template ◽  
Scanning Electron

We have studied porous anodic alumina template through the second anodic oxidation of preparation. Observing the morphology of nanoscale AAO template using scanning electron microscope (SEM), the results indicate that the pores are orderly paralleled arranged with uniform pore diameter, perpendicular to the template surface. A detailed study of the influence of different oxidation conditions, such as different type of electrolyte, concentration, voltage and temperature on the template of alumina and its electrochemical mechanism were performed. By changing the oxidation voltage, electrolyte type, concentration, pore diameter and template thickness can be altered in a wide range such that we can obtain the desired aspect ratio. <br>

Chemical Transformation of Fe, Air & Water to Ammonia: Variation of Reaction Rate with Temperature, Pressure, Alkalinity and Iron

2018 ◽  
Author(s):  
Ping Peng ◽  
Fang-Fang Li ◽  
Xinye Liu ◽  
Jiawen Ren ◽  
jessica stuart ◽  
...  
Keyword(s):  
Particle Size ◽  
Reaction Rate ◽  
Electrolyte Concentration ◽  
Iron Concentration ◽  
Reaction Medium ◽  
Iron Particle ◽  
Intermediate Step ◽  
Ammonia Production ◽  
Pure Nitrogen ◽  
Alkaline Reaction

The rate of ammonia production by the <u>chemical </u>oxidation of iron, N<sub>2</sub>(from air or as pure nitrogen) and water is studied as a function of (1) iron particle size, (2) iron concentration, (3) temperature, (4) pressureand (5) concentration of the alkaline reaction medium. The reaction meduium consists of an aqueous solution of equal molal concentrations of NaOH and KOH (Na<sub>0.5</sub>K<sub>0.5</sub>OH). We had previously reported on the <u>chemical </u>reaction of iron and nitrogen in alkaline medium to ammonia as an intermediate step in the <u>electrochemical </u>synthesis of ammonia by a nano-sized iron oxide electrocatlyst. Here, the intermediate <u>chemical </u>reaction step is exclusively explored. The ammonia production rate increases with temperature (from 20 to 250°C), pressure (from 1 atm to 15 atm of air or N<sub>2</sub>), and exhibits a maximum rate at an electrolyte concentration of 8 molal Na<sub>0,5</sub>K<sub>0,5</sub>OH in a sealed N<sub>2</sub>reactor. 1-3 µm particle size Fe drive the highest observed ammonia production reaction rate. The Fe mass normalized rate of ammonia production increases with decreasing added mass of the Fe reactant reaching a maximum observed rate of 2.2x10<sup>-4</sup>mole of NH<sub>3</sub>h<sup>-1</sup>g<sup>-1</sup>for the reaction of 0.1 g of 1-3 µm Fe in 200°C 8 molal Na<sub>0.5</sub>K<sub>0.5</sub>OH at 15 atm. Under these conditions 5.1 wt% of the iron reacts to form NH<sub>3</sub>via the reaction N<sub>2</sub>+ 2Fe + 3H<sub>2</sub>O ®2NH<sub>3</sub>+ Fe<sub>2</sub>O<sub>3</sub>.

Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films

1999 ◽  
Vol 567 ◽  
Author(s):  
Renee Nieh ◽  
Wen-Jie Qi ◽  
Yongjoo Jeon ◽  
Byoung Hun Lee ◽  
Aaron Lucas ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Future Generation ◽  
Oxide Thickness ◽  
Layer Growth ◽  
X Ray ◽  
Bst Films

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.

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