High-Resolution Spectroscopic Measurements of InGaAs/GaAs Self-Assembled Quantum Dots

2019 ◽  
Vol 2 (5) ◽  
pp. 15-25 ◽  
Author(s):  
Kevin L. Silverman ◽  
Joseph Berry ◽  
Martin Stevens ◽  
Richard Mirin
2009 ◽  
Vol 6 (4) ◽  
pp. 890-893 ◽  
Author(s):  
M. Abbarchi ◽  
C. Mastrandrea ◽  
T. Kuroda ◽  
A. Vinattieri ◽  
T. Mano ◽  
...  

2000 ◽  
Vol 283 (1-3) ◽  
pp. 65-68 ◽  
Author(s):  
V. Holý ◽  
J. Stangl ◽  
G. Springholz ◽  
M. Pinczolits ◽  
G. Bauer ◽  
...  

1999 ◽  
Vol 588 ◽  
Author(s):  
X. C. Wang ◽  
S. J. Chua ◽  
S. J. Xu ◽  
Z. H. Zhang

AbstractIn this paper, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescence linewidth of the ground state and excited state emissions from the InAs dot layers for the annealed samples indicates an improvement of the size-distribution of the QDs. Large blue-shift of the energy positions of both emissions was also observed. High resolution X-Ray diffraction experiments give strong evidence of the interface atom interdiffusion in the annealed samples. This work shows ability to tune the wavelength for applications like infrared detectors and lasers based on intrasubband transitions of self-assembled QDs.


2001 ◽  
Vol 171 (12) ◽  
pp. 1365
Author(s):  
E.E. Vdovin ◽  
Yu.N. Khanin ◽  
Yu.V. Dubrovskii ◽  
A. Veretennikov ◽  
A. Levin ◽  
...  

2007 ◽  
Vol 122-123 ◽  
pp. 730-734 ◽  
Author(s):  
Michio Ikezawa ◽  
Selvakumar Nair ◽  
Fumitaka Suto ◽  
Yasuaki Masumoto ◽  
Chikako Uchiyama ◽  
...  

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