Mobility Degradation Analysis for La2O3 nMOSFET

2019 ◽  
Vol 2 (1) ◽  
pp. 329-338 ◽  
Author(s):  
Rosa María Luna-Sánchez ◽  
Ignacio González-Martínez
Keyword(s):  
Mobility Degradation ◽  
Degradation Analysis

A Physical and SPICE Mobility Degradation Analysis for NBTI

2013 ◽  
Vol 60 (7) ◽  
pp. 2096-2103 ◽  
Author(s):  
Ankush Chaudhary ◽  
Souvik Mahapatra
Keyword(s):  
Mobility Degradation ◽  
Degradation Analysis

Degradation Analysis and Degradation Suppression Technology Caused by Light Absorption at Active Layer Facet of GaInAsP Laser Diode

2008 ◽  
Vol 128 (5) ◽  
pp. 732-737
Author(s):  
Hiroyuki Ichikawa ◽  
Masashi Ito ◽  
Chie Fukuda ◽  
Kotaro Hamada ◽  
Akira Yamaguchi ◽  
...  
Keyword(s):  
Active Layer ◽  
Laser Diode ◽  
Light Absorption ◽  
Degradation Analysis

Thermal Degradation Analysis of Fluorocarbon Thin Films prepared by an r.f. Sputtering with Poly (tetrafluoroethylene) Target

2013 ◽  
Vol 56 (4) ◽  
pp. 133-135
Author(s):  
Yuki IKEDA ◽  
Satoru IWAMORI ◽  
Hiroyuki MATSUMOTO ◽  
Kiyoshi YOSHINO ◽  
Itsuo NISHIYAMA ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Degradation ◽  
Degradation Analysis

Degradation Analysis of Thick Film Chip Resistors

2009 ◽  
Author(s):  
Bhanu Sood ◽  
Diganta Das ◽  
Michael H. Azarian ◽  
Michael Pecht
Keyword(s):  
Thick Film ◽  
Printed Circuit Board ◽  
Negative Resistance ◽  
Circuit Board ◽  
High Humidity ◽  
Circuit Boards ◽  
Chemical Modifications ◽  
Current Leakage ◽  
Printed Circuit ◽  
Degradation Analysis

Abstract Negative resistance drift in thick film chip resistors in high temperature and high humidity application conditions was investigated. This paper reports on the investigation of possible causes including formation of current leakage paths on the printed circuit board, delamination between the resistor protective coating and laser trim, and the possibility of silver migration or copper dendrite formation. Analysis was performed on a set of circuit boards exhibiting failures due to this phenomenon. Electrical tests after mechanical and chemical modifications showed that the drift was most likely caused by moisture ingress that created a conductive path across the laser trim.

Mobility degradation in gated Si:SiGe quantum wells with thermally grown oxides

1995 ◽  
Vol 31 (21) ◽  
pp. 1876-1878 ◽  
Author(s):  
R.S. Prasad ◽  
S. Kanjanachuchai ◽  
J. Fernández ◽  
T.J. Thornton ◽  
A. Matsumura
Keyword(s):  
Quantum Wells ◽  
Thermally Grown Oxides ◽  
Mobility Degradation ◽  
Thermally Grown
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