Degradation in Hafnium Oxynitride (HfNO) High-k Dielectric under Nanoscaled Ramped Voltage Stress by Using Conductive Atomic Force Microscopy

2019 ◽  
Vol 2 (1) ◽  
pp. 267-272
Author(s):  
Rosa María Luna-Sánchez ◽  
Ignacio González-Martínez
Keyword(s):  
Atomic Force Microscopy ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
High K ◽  
Voltage Stress ◽  
Hafnium Oxynitride ◽  
High K Dielectric

On the Nature of Weak Spots in High-k Layers Submitted to Anneals

2004 ◽  
Vol 811 ◽  
Author(s):  
J. Pétry ◽  
W. Vandervorst ◽  
O. Richard ◽  
T. Conard ◽  
P. DeWolf ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Strong Correlation ◽  
Positive Charge ◽  
The Other ◽  
Physical Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Other Hand ◽  
High K ◽  
High K Dielectric

ABSTRACTIn the path to the introduction of high-k dielectric into IC components, a large number of challenges have still to be solved. Some of the major issues concern the low mobility of carriers and the reliability of the devices. Trapped charges in the stack have been identified as being the cause of these issues. With this in mind, we used Conducting Atomic Force Microscopy, combined with physical analysis to understand the nature of these charges. In this contribution, we have studied the uniformity of thin HfO2 layers, with and without anneal. The Conducting Atomic Force microscopy measurements show spots of higher conductivity. Recording local IV's in those ‘weak’ spots suggests that they consist of positive charge. On the other hand, XPS and ToFSIMS analysis show a diffusion of the interfacial SiO2 upwards into the high-k layer. Finally, the comparison of samples with differing high-k material and crystallinity indicates a strong correlation between the weak spots and the presence of silicon in the film.

Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

2013 ◽  
Vol 53 (12) ◽  
pp. 1857-1862 ◽  
Author(s):  
R. Foissac ◽  
S. Blonkowski ◽  
M. Kogelschatz ◽  
P. Delcroix ◽  
M. Gros-Jean ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Gate Stack ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
High K

Nanoscale Observations for Degradation Phenomena in SiO2 and High－k Gate lnsulators Using Conductive－Atomic Force Microscopy

2005 ◽  
Author(s):  
Shigeaki Zaima ◽  
Akiyoshi Seko ◽  
Yukihiko Watanabe ◽  
Toshifumi Sago ◽  
Mitsuo Sakashita ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
High K
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