Test Methods for Measuring Bulk Copper and Nickel in Heavily Doped p-Type Silicon Wafers

2006 ◽  
Vol 153 (6) ◽  
pp. G566 ◽  
Author(s):  
Laszlo Fabry ◽  
Robert Hoelzl ◽  
Andre Andrukhiv ◽  
Kei Matsumoto ◽  
Joann Qiu ◽  
...  
Keyword(s):  
Test Methods ◽  
Silicon Wafers ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type

An etchant for delineation of flow pattern defects in heavily doped p-type silicon wafers

2013 ◽  
Vol 16 (3) ◽  
pp. 893-898 ◽  
Author(s):  
Tao Xu ◽  
Xinpeng Zhang ◽  
Xiangyang Ma ◽  
Deren Yang
Keyword(s):  
Flow Pattern ◽  
Silicon Wafers ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type

A Model for the High Temperature Transport Properties of Heavily Doped P-Type Silicon-Germanium Alloys

1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Silicon Germanium ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Long Wavelength ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Silicon Germanium Alloys

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.

An Etchant for Delineation of Flow Pattern Defects in Heavily Doped n-type Silicon Wafers

2019 ◽  
Vol 44 (1) ◽  
pp. 751-757 ◽  
Author(s):  
Tao Xu ◽  
Xinpeng Zhang ◽  
Xiangyang Ma ◽  
Deren Yang
Keyword(s):  
Flow Pattern ◽  
Silicon Wafers ◽  
Type Silicon ◽  
Heavily Doped

AC Photovoltaic Images of Thermally Oxidized P-Type Silicon Wafers Contaminated with Metals

1992 ◽  
Vol 31 (Part 1, No. 8) ◽  
pp. 2319-2321 ◽  
Author(s):  
Hirofumi Shimizu ◽  
Chusuke Munakata
Keyword(s):  
Silicon Wafers ◽  
Type Silicon ◽  
P Type

Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers

2009 ◽  
Vol 156-158 ◽  
pp. 283-288 ◽  
Author(s):  
Maxim Trushin ◽  
O.F. Vyvenko ◽  
Teimuraz Mchedlidze ◽  
Oleg Kononchuk ◽  
Martin Kittler
Keyword(s):  
Oxygen Concentration ◽  
Dislocation Structure ◽  
Electronic States ◽  
Silicon Wafers ◽  
Experimental Investigations ◽  
Deformation Potential ◽  
Screw Dislocations ◽  
Type Silicon ◽  
Frenkel Effect ◽  
P Type

The results of experimental investigations of the dislocation-related DLTS-peaks originated from the dislocation networks (DN) are presented. Samples with DNs were produced by direct bonding of p-type silicon wafers and no enhancement of oxygen concentration was detected near the DN plane. Origins of the DLTS peaks were proposed and a correlation with the dislocation-related photoluminescence data was established based on known dislocation structure of the samples. Two types of shallow DLTS peaks exhibited Pool-Frenkel effect, which could be linked to the dislocation deformation potential. One of the shallow DLTS peaks was related to straight parts of screw dislocations and another - to the intersections of the dislocations.

Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers*

1984 ◽  
Vol 23 (Part 1, No. 11) ◽  
pp. 1451-1461 ◽  
Author(s):  
Chusuke Munakata ◽  
Shigeru Nishimatsu ◽  
Noriaki Honma ◽  
Kunihiro Yagi
Keyword(s):  
Silicon Wafers ◽  
Type Silicon ◽  
P Type
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