Critical Role of Polymeric Binders on the Electronic Transport Properties of Composites Electrode

2006 ◽  
Vol 153 (4) ◽  
pp. A679 ◽  
Author(s):  
D. Guy ◽  
B. Lestriez ◽  
R. Bouchet ◽  
D. Guyomard
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Critical Role ◽  
Electronic Transport Properties ◽  
Polymeric Binders ◽  
Properties Of Composites

scholarly journals Semi-classical electronic transport properties of ternary compound AlGaAs2: role of different scattering mechanisms

2019 ◽  
Vol 32 (13) ◽  
pp. 135704
Author(s):  
Soubhik Chakrabarty ◽  
Anup Kumar Mandia ◽  
Bhaskaran Muralidharan ◽  
Seung Cheol Lee ◽  
Satadeep Bhattacharjee
Keyword(s):  
Transport Properties ◽  
Ternary Compound ◽  
Electronic Transport ◽  
Scattering Mechanisms ◽  
Electronic Transport Properties

THEORETICAL STUDIES OF THE RECTIFYING PERFORMANCE IN DIBLOCK MOLECULAR JUNCTIONS: THE ROLE OF THE ANCHORING GROUPS

2012 ◽  
Vol 26 (11) ◽  
pp. 1250082 ◽  
Author(s):  
CAI-JUAN XIA ◽  
DE-SHENG LIU ◽  
DE-HUA ZHANG ◽  
HAN-CHEN LIU
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Density Functional ◽  
Careful Consideration ◽  
Molecular Junctions ◽  
Electronic Transport Properties ◽  
Transmission Coefficients ◽  
Chemical Structures ◽  
Anchoring Groups

By applying nonequilibrium Green's function formalism combined with first-principles density functional theory, we investigate the effect of different anchoring groups on the rectifying behavior in diblock molecular junctions. The spatial distributions of molecular orbitals and the influence of transmission coefficients under various external voltage biases on the electronic transport through the molecular device are discussed in detail. The results show that the anchoring groups play a significant role on the electronic transport properties. The rectifying performance in molecular junctions can be manipulated, enhanced, or suppressed by a careful consideration of the effects of the anchoring group and such modifications become crucial in optimizing the electronic transport properties of chemical structures.

ELECTRONIC TRANSPORT PROPERTIES OF SILICON NANOWIRE CAGE

2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Nanowire ◽  
Electronic Transport Properties

Improved thermoelectric transport properties of Ge4Se3Te through dimensionality reduction

2021 ◽  
Author(s):  
H. H. Huang ◽  
Xiaofeng Fan ◽  
Wei Tao Zheng ◽  
David J. Singh
Keyword(s):  
Dimensionality Reduction ◽  
Transport Properties ◽  
Electronic Transport ◽  
Thermoelectric Transport ◽  
Electronic Transport Properties ◽  
Thermoelectric Transport Properties

Layered semiconducting Ge4Se3Te shows unusual bonding that suggests the possibility of unusual transport that may be favorable for thermoelectrics. We investigated the electronic transport properties in relation to thermoelectricity of...

scholarly journals Effect of vacancy defects on the electronic transport properties of an Ag–ZnO–Pt sandwich structure

2021 ◽  
Vol 20 (2) ◽  
pp. 798-804
Author(s):  
G. R. Berdiyorov ◽  
F. Boltayev ◽  
G. Eshonqulov ◽  
H. Hamoudi
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Density Functional ◽  
Practical Importance ◽  
Functional Formalism ◽  
Vacancy Defects ◽  
Electronic Transport Properties ◽  
Charge Localization ◽  
Metal Insulator Metal ◽  
Current Rectification

AbstractThe effect of zinc and oxygen vacancy defects on the electronic transport properties of Ag(100)–ZnO(100)–Pt(100) sandwich structures is studied using density functional theory in combination with the nonequilibrium Green’s functional formalism. Defect-free systems show clear current rectification due to voltage dependent charge localization in the system as revealed in our transmission eigenstates analysis. Regardless of the location, oxygen vacancies result in enhanced current in the system, whereas Zn vacancy defects reduce the charge transport across the junction. The current rectification becomes less pronounced in the presence of both types of vacancy defects. Our findings can be of practical importance for developing metal-insulator-metal diodes.

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