High Oxygen Czochralski Silicon Crystal Growth Relationship to Epitaxial Stacking Faults

1978 ◽  
Vol 125 (7) ◽  
pp. 1151-1155 ◽  
Author(s):  
L. E. Katz ◽  
D. W. Hill
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Stacking Faults ◽  
High Oxygen ◽  
Czochralski Silicon

Behavior Of Point Defects In CZ Silicon Crystal Growth-Formation Of Polyhedral Cavities And Oxidation-Induced Stacking Fault Nuclei

1996 ◽  
Vol 442 ◽  
Author(s):  
K Tanahashi ◽  
N. Inoue ◽  
Y. Mizokawa
Keyword(s):  
Crystal Growth ◽  
Ternary System ◽  
Point Defects ◽  
Silicon Crystal ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Czochralski Silicon ◽  
Growth Formation

AbstractThe origin of oxidation–induced stacking faults (OSF) and polyhedral cavities in as–grown Czochralski silicon (CZ–Si) crystals is discussed with comparison to the behavior of previously investigated grown–in oxide precipitates. The incorporation, diffusion and reaction in the vacancy, self–interstitial and oxygen ternary system are considered to discuss the origin of grown–in defects.

Measurement of temperature gradient in Czochralski silicon crystal growth

2001 ◽  
Vol 229 (1-4) ◽  
pp. 6-10 ◽  
Author(s):  
Xinming Huang ◽  
Toshinori Taishi ◽  
Tiefeng Wang ◽  
Keigo Hoshikawa
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Silicon Crystal ◽  
Czochralski Silicon

Investigation of nitrogen behaviors during Czochralski silicon crystal growth

2011 ◽  
Vol 318 (1) ◽  
pp. 178-182 ◽  
Author(s):  
Xuegong Yu ◽  
Deren Yang ◽  
Keigo Hoshikawa
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Czochralski Silicon
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