Effect of Proton Damage on Optical Modulation Spectra of Gallium Arsenide

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

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DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

CAD/EDA, MODELING AND SIMULATION IN MODERN ELECTRONICS: COLLECTION OF SCIENTIFIC PAPERS OF THE III INTERNATIONAL SCIENTIFIC AND PRACTICAL CONFERENCE ◽

10.30987/conferencearticle_5e028210156607.46541827 ◽

2019 ◽

Author(s):

Aleksey Bogachev ◽

Vladimir Krylov

Keyword(s):

Activation Energy ◽

Gallium Arsenide ◽

Energy Dependence ◽

Deep Level ◽

Deep Levels ◽

Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

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Gallium Arsenide Integrated Circuits Decapsulation Technique Using Mixed Acid Chemistry For Die-Level Failure Analysis

10.31399/asm.cp.istfa2018p0496 ◽

2018 ◽

Author(s):

Harold Jeffrey M. Consigo ◽

Ricardo S. Calanog ◽

Melissa O. Caseria

Keyword(s):

Gallium Arsenide ◽

Sulfuric Acid ◽

Nitric Acid ◽

Integrated Circuits ◽

Failure Analysis ◽

Mixed Acid ◽

Optimum Parameters ◽

Plastic Package ◽

Fuming Nitric Acid ◽

Concentrated Sulfuric Acid

Abstract Gallium Arsenide (GaAs) integrated circuits have become popular these days with superior speed/power products that permit the development of systems that otherwise would have made it impossible or impractical to construct using silicon semiconductors. However, failure analysis remains to be very challenging as GaAs material is easily dissolved when it is reacted with fuming nitric acid used during standard decapsulation process. By utilizing enhanced chemical decapsulation technique with mixture of fuming nitric acid and concentrated sulfuric acid at a low temperature backed with statistical analysis, successful plastic package decapsulation happens to be reproducible mainly for die level failure analysis purposes. The paper aims to develop a chemical decapsulation process with optimum parameters needed to successfully decapsulate plastic molded GaAs integrated circuits for die level failure analysis.

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