X‐Ray Diffraction Topography and Crystal Characterization of GaN Epitaxial Layers for Light‐Emitting Diodes

1978 ◽  
Vol 125 (12) ◽  
pp. 2076-2078 ◽  
Author(s):  
A. Shintani ◽  
Y. Takano ◽  
S. Minagawa ◽  
M. Maki
Keyword(s):  
Light Emitting Diodes ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
X Ray ◽  
Crystal Characterization

Crystal Characterization of Spherical Silicon Solar Cell by X-ray Diffraction

2006 ◽  
Vol 45 (5A) ◽  
pp. 3933-3937 ◽  
Author(s):  
Satoshi Omae ◽  
Takashi Minemoto ◽  
Mikio Murozono ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Characterization

Structural Studies Of Epitaxial CdF2 Layers on Si(111)

1996 ◽  
Vol 441 ◽  
Author(s):  
A. Yu. Khilko ◽  
R. N. Kyutt ◽  
G. N. Mosina ◽  
N. S. Sokolov ◽  
Yu. V. Shusterman ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Optimal Growth ◽  
Misfit Strain ◽  
X Ray Diffraction ◽  
Optimal Growth Temperature ◽  
Light Emitting ◽  
X Ray ◽  
Light Emitting Devices ◽  
Transmission Electron

AbstractEpitaxial CdF2 layers, which may be used in light-emitting devices integrated with silicon, were grown by Molecular Beam Epitaxy (MBE). Characterization of the layers by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) showed that optimal growth temperature lies in the range 60–80°C. The sticking coefficient of CdF2 molecules was found to decrease at temperatures above 100°C. Different modes of misfit strain relaxation were observed above and below that temperature.

scholarly journals The Role of Bismuth on the Best Red Light Emitting Nanophosphors

2021 ◽  
Vol 9 (6) ◽  
pp. 55-59
Author(s):  
Vini. K ◽  
Padmakumar H. ◽  
K.M. Nissamudeen
Keyword(s):  
Rare Earths ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Combustion Method ◽  
Processing Temperature ◽  
X Ray Diffraction ◽  
Luminescence Enhancement ◽  
Light Emitting ◽  
X Ray

This paper explains the role of bismuth in the luminescence enhancement of Y2O3 :Eu nanophosphors prepared by Combustion method. Bi ions serve as effective sensitizers for visible emitting rare earths for Light Emitting Diodes. From the X-ray diffraction studies, bismuth co-activated nanophosphors exhibit an early crystallization. Bismuth incorporation not only results in the luminescence enhancement at 612 nm, due to 5D0 to 7F2 transition but also reduces the processing temperature for intense photoemission.

Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core–shell (In,Ga)N/GaN rod light-emitting diodes

2016 ◽  
Vol 27 (32) ◽  
pp. 325707 ◽  
Author(s):  
Thilo Krause ◽  
Michael Hanke ◽  
Zongzhe Cheng ◽  
Michael Niehle ◽  
Achim Trampert ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Core Shell ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
X Ray ◽  
Individual Core

Photocrystallography – design and methodology for the use of a light-emitting diode device

2010 ◽  
Vol 43 (2) ◽  
pp. 337-340 ◽  
Author(s):  
Simon K. Brayshaw ◽  
Jason W. Knight ◽  
Paul R. Raithby ◽  
Teresa L. Savarese ◽  
Stefanie Schiffers ◽  
...  
Keyword(s):  
Single Crystal ◽  
Light Source ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Experimental Methodology ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
X Ray ◽  
Led Array

With the increase in interest in photocrystallographic experiments, the use of light-emitting diodes (LEDs) provides an alternative, low-budget light source (by comparison to lasers) and allows photocrystallographic experiments to be carried out readily. Here the design of an LED array device suitable for use in single-crystal X-ray diffraction experiments is reported, and the experimental methodology used for determining the structures of metastable species is described.

Compositional and Structural Characterization of Heterostructure InGaN-Based Light-Emitting Diode by High Resolution X-Ray Diffraction

2012 ◽  
Vol 620 ◽  
pp. 22-27 ◽  
Author(s):  
Ahmad Hadi Ali ◽  
Ahmad Shuhaimi ◽  
Hassan Zainuriah ◽  
Yushamdan Yusof
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Structural Characterization ◽  
Light Emitting Diode ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Light Emitting ◽  
X Ray ◽  
Multi Quantum Well

This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW) active layer. Phase analysis 2θ-scan proved the composition of GaN (0002) and (0004) at 34.63oand 72.98o, respectively. Rocking curveφ-scan showed six significant peaks of the hexagonal GaN structures with consistent angular gaps of ~60o. From x-ray rocking curve (XRC)ω-scan, screw and mix dislocation density is found as 2.85 × 109cm-2, while pure edge dislocation density is found as 2.23 × 1011cm-2.

Sign in / Sign up

Export Citation Format

Share Document