Effect of Ruthenium Ions on Grain Boundaries in Gallium Arsenide Thin Film Photovoltaic Devices

1980 ◽  
Vol 127 (1) ◽  
pp. 90-95 ◽  
Author(s):  
W. D. Johnston ◽  
H. J. Leamy ◽  
B. A. Parkinson ◽  
A. Heller ◽  
B. Miller
Keyword(s):  
Thin Film ◽  
Gallium Arsenide ◽  
Grain Boundaries ◽  
Photovoltaic Devices

ChemInform Abstract: EFFECT OF RUTHENIUM IONS ON GRAIN BOUNDARIES IN GALLIUM ARSENIDE THIN FILM PHOTOVOLTAIC DEVICES

1980 ◽  
Vol 11 (20) ◽  
Author(s):  
W. D. JUN. JOHNSTON ◽  
H. J. LEAMY ◽  
B. A. PARKINSON ◽  
A. HELLER ◽  
B. MILLER
Keyword(s):  
Thin Film ◽  
Gallium Arsenide ◽  
Grain Boundaries ◽  
Photovoltaic Devices

scholarly journals Observation and Implications of Composition Inhomogeneity Along Grain Boundaries in Thin Film Polycrystalline CdTe Photovoltaic Devices

2019 ◽  
pp. 1900152 ◽  
Author(s):  
Sudhajit Misra ◽  
Jeffery A. Aguiar ◽  
Yubo Sun ◽  
Brian v. Devener ◽  
Vasilios Palekis ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Photovoltaic Devices ◽  
Composition Inhomogeneity

The effects of grain boundaries on the performance of thin film photovoltaic devices

1979 ◽  
Vol 58 (1) ◽  
pp. 95-99 ◽  
Author(s):  
L.L. Kazmerski ◽  
Peter Sheldon ◽  
P.J. Ireland
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Photovoltaic Devices

Diffraction effects from inclined grain boundaries in polycrystalline thin foils

1978 ◽  
Vol 36 (1) ◽  
pp. 420-421
Author(s):  
C.B. Carter ◽  
A.M. Donald ◽  
S.L. Sass
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Boundary Plane ◽  
Foil Surface ◽  
Thin Foils ◽  
The Matrix ◽  
Firm Basis ◽  
Diffraction Patterns ◽  
Wave Matching ◽  
Diffraction Effects

Using thin-film gold bicrystals with the boundary plane parallel to the foil surface, it has been shown(l,2) that networks of grain boundary dislocations can act as diffraction gratings and give rise to subsidiary reflections close to the matrix reflections in electron diffraction patterns. Recently several groups of workers(3-5) have shown that inclined boundaries in polycrystalline specimens also produce extra reflections which may be due to the periodic nature of the boundaries. In general grain boundaries in polycrystalline specimens will be steeply inclined to the foil surface and additional reflections due to wave matching at the boundary(6) will also be present. The diffraction technique has the potential for providing detailed information on the structure of inclined boundaries (see, for example (5)), especially for the case where the image contains no useful information. In order to provide a firm basis for this technique, the geometry of the diffraction effects expected from inclined boundaries and the influence of these effects on the appearance of images will be examined.

A statistics modeling approach for the optimization of thin film photovoltaic devices

Solar Energy ◽  
2017 ◽  
Vol 144 ◽  
pp. 232-243 ◽  
Author(s):  
António T. Vicente ◽  
Pawel J. Wojcik ◽  
Manuel J. Mendes ◽  
Hugo Águas ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Film ◽  
Photovoltaic Devices ◽  
Modeling Approach

Quantum-kinetic Theory of Defect-mediated Recombination in Nanostructure-based Photovoltaic Devices

2013 ◽  
Vol 1493 ◽  
pp. 91-96 ◽  
Author(s):  
Urs Aeberhard
Keyword(s):  
Thin Film ◽  
Energy Gap ◽  
Photovoltaic System ◽  
Quasi Equilibrium ◽  
The Novel ◽  
Photovoltaic Devices ◽  
Novel Approach ◽  
Gap States ◽  
Non Equilibrium Green’S Function ◽  
Kinetic Treatment

ABSTRACTIn this paper, a quantum-kinetic equivalent of Shockley-Read-Hall recombination is derived within the non-equilibrium Green's function formalism for a photovoltaic system with selectively contacted extended-state absorbers and a localized deep defect state in the energy gap. The novel approach is tested on a homogeneous bulk absorber and then applied to a thin film photo-diode with large built-in field in the defect-rich absorber region. While the quantum-kinetic treatment reproduces the semi-classical characteristics for a bulk absorber in quasi-equilibrium conditions, for which the latter picture is valid, it reveals in the thin film case non-classical characteristics of recombination enhanced by tunneling into field-induced sub-gap states.

Improvement of Thermal Conductivity of Electroplated Copper Thin-Film Interconnections by Controlling Their Micro Texture

2014 ◽  
Author(s):  
Pornvitoo Rittinon ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Diffraction Method ◽  
Electron Back Scatter Diffraction ◽  
High Resistivity ◽  
Copper Thin Film ◽  
Electroplated Copper ◽  
The Relationship

Copper thin films are indispensable for the interconnections in the advanced electronic products, such as TSV (Trough Silicon Via), fine bumps, and thin-film interconnections in various devices and interposers. However, it has been reported that both electrical and mechanical properties of the films vary drastically comparing with those of conventional bulk copper. The main reason for the variation can be attributed to the fluctuation of the crystallinity of grain boundaries in the films. Porous or sparse grain boundaries show very high resistivity and brittle fracture characteristic in the films. Thus, the thermal conductivity of the electroplated copper thin films should be varied drastically depending on their micro texture based on the Wiedemann-Franz’s law. Since the copper interconnections are used not only for the electrical conduction but also for the thermal conduction, it is very important to quantitatively evaluate the crystallinity of the polycrystalline thin-film materials and clarify the relationship between the crystallinity and thermal properties of the films. The crystallinity of the interconnections were quantitatively evaluated using an electron back-scatter diffraction method. It was found that the porous grain boundaries which contain a significant amount of vacancies increase the local electrical resistance in the interconnections, and thus, cause the local high Joule heating. Such porous grain boundaries can be eliminated by control the crystallinity of the seed layer material on which the electroplated copper thin film is electroplated.

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