Electronic Characterization of Heteroepitaxial Silicon‐on‐Sapphire by Surface Photovoltage Spectroscopy

1981 ◽  
Vol 128 (12) ◽  
pp. 2665-2670 ◽  
Author(s):  
J. Lagowski ◽  
L. Jastrzebski ◽  
G. W. Cullen
Keyword(s):  
Surface Photovoltage ◽  
Surface Photovoltage Spectroscopy

Surface photovoltage spectroscopy characterization of InGaPN alloys grown on GaP substrates

2007 ◽  
Vol 19 (9) ◽  
pp. 096009 ◽  
Author(s):  
H P Hsu ◽  
P Y Wu ◽  
Y S Huang ◽  
S Sanorpim ◽  
K K Tiong ◽  
...  
Keyword(s):  
Surface Photovoltage ◽  
Surface Photovoltage Spectroscopy

Photoluminescence and surface photovoltage spectroscopy characterization of Zn1−x−yBexMgySe mixed crystals

2008 ◽  
Vol 103 (9) ◽  
pp. 093522 ◽  
Author(s):  
D. O. Dumcenco ◽  
H. P. Hsu ◽  
Y. S. Huang ◽  
F. Firszt ◽  
S. Łęgowski ◽  
...  
Keyword(s):  
Mixed Crystals ◽  
Surface Photovoltage ◽  
Surface Photovoltage Spectroscopy

Study of Silicon Nanoparticles Formation in Silicon Nitride

2012 ◽  
Vol 186 ◽  
pp. 66-69 ◽  
Author(s):  
Jacek Ratajczak ◽  
Krzysztof Hejduk ◽  
Marek Lipiński ◽  
Tadeusz Piotrowski ◽  
Mariusz Płuska ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Nanocrystals ◽  
Silicon Nanoparticles ◽  
Surface Photovoltage ◽  
Spectroscopy Technique ◽  
Surface Photovoltage Spectroscopy ◽  
Dielectric Layers ◽  
Transmission Electron ◽  
Nitride Layers

We present results of the study on the silicon nanoparticles formation in multilayer silicon nitride structures. These structures consist of pairs of stoichiometric silicon nitride dielectric layers (SiNx) and silicon rich nitride layers (SRN). Silicon nanocrystals precipitate from the SRN layer during annealing at high temperatures (1000 °C or 1100 °C). High resolution transmission electron microscopy has been applied for investigation of the nanocrystals formation. Surface photovoltage spectroscopy technique was used for the spectral characterization of prepared structures

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