MOS Device Fabrication Using X‐Ray Lithography

1981 ◽  
Vol 128 (11) ◽  
pp. 2434-2437 ◽  
Author(s):  
K. Suzuki ◽  
J. Matsui ◽  
T. Ono ◽  
Y. Saito
Keyword(s):  
Device Fabrication ◽  
X Ray ◽  
Mos Device

Die Bonding Issues on Silicon Carbide Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 875-878 ◽  
Author(s):  
Seung Yong Lee ◽  
Jang Sub Lee ◽  
Tae Hong Kim ◽  
Sung Yong Choi ◽  
Hak Jong Kim ◽  
...  
Keyword(s):  
Shear Test ◽  
Vertical Structure ◽  
Optical Microscope ◽  
Device Fabrication ◽  
Cleaning Process ◽  
X Ray ◽  
The Third ◽  
Bottom Side ◽  
Die Bonding

We report on the die bonding processes and how the surface roughness and metallization schemes affect the processes of die bonding in 4H-SiC device fabrication using a soldering test and die shear test (DST) with differently prepared 4H-SiC samples. The first set of samples (FZ#1 and FZ#2) was capped with sequentially evaporated Ti and Au on an annealed Ni layer. The second set of samples (FZ#3 and FZ#4) and the third set of samples (FZ#5 and FZ#6) were prepared by 4μm-thick Au electroplating on an annealed Ni layer and an un-annealed Ni layer, respectively. The quality of the soldering, such as the solder coverage, void, and adhesion, was characterized by optical microscope, X-ray microprobe, and DST. We found that the samples (FZ#4 and FZ#6) deposited by Au electroplating on C-face (bottom-side) 4H-SiC provided a satisfactory result for the tests of solder coverage, void, and DST and also realized the cleaning process prior to the electroplating and soldering was the most crucial in the die packaging processes of vertical structure devices. The void fraction measured by X-ray microprobe for the samples, FZ#4 and FZ#6 was 2.2% (average for 5 samples) and 0.8% (average for 3 samples), respectively.

X-ray lithography system for submicron device fabrication

1982 ◽  
Author(s):  
B. Fay ◽  
A. Cornette ◽  
J.P. Nivoliers
Keyword(s):  
Device Fabrication ◽  
X Ray ◽  
Lithography System

Application of positive and negative tone x-ray resist for 0.5μm CMOS device fabrication

1990 ◽  
Vol 11 (1-4) ◽  
pp. 481-485 ◽  
Author(s):  
U. Mescheder ◽  
U. Mackens ◽  
H. Lifka ◽  
R. Dammel ◽  
G. Pawloski ◽  
...  
Keyword(s):  
Device Fabrication ◽  
X Ray ◽  
Negative Tone

Total Reflection X-Ray Fluorescence Spectroscopy: Analysis Of Gaas And InGaAs

1993 ◽  
Vol 37 ◽  
pp. 585-593
Author(s):  
Leigh Ann Filcs-Sesler ◽  
Don Plumton ◽  
Yung-Chung Kao ◽  
Tae S. Kim
Keyword(s):  
Nondestructive Method ◽  
Device Fabrication ◽  
Total Reflection ◽  
Surface Contamination ◽  
Device Performance ◽  
Spectroscopy Analysis ◽  
X Ray ◽  
Low Levels ◽  
Metallic Impurities

AbstractThis article explores applications of total reflection x-ray fluorescence (TRXRF) to GaAs processes. The applications include determination of surface contamination and InGaAs layer thicknesses. Surface contamination can deteriorate device performance and can occur in starting substrates and in subsequent processing. We demonstrate that TRXRF is a quick, nondestructive method for identifying sulfur contamination on incoming wafers and low levels of metallic impurities from device fabrication. Variable angle TRXRF has been used to determine heterostmeture film thickness, measuring films of InGaAs on GaAs as thin as 4 nm.

scholarly journals High-Performance Flexible Ultraviolet Photodetectors with Ni/Cu-Codoped ZnO Nanorods Grown on PET Substrates

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1067 ◽  
Author(s):  
Hafiz Muhammad Salman Ajmal ◽  
Fasihullah Khan ◽  
Noor Ul Huda ◽  
Sunjung Lee ◽  
Kiyun Nam ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Electronic Device ◽  
Deep Level ◽  
Zno Nanorods ◽  
Ultra Violet ◽  
Device Fabrication ◽  
Electrode Structure ◽  
Large Area ◽  
X Ray

As a developing technology for flexible electronic device fabrication, ultra-violet (UV) photodetectors (PDs) based on a ZnO nanostructure are an effective approach for large-area integration of sensors on nonconventional substrates, such as plastic or paper. However, photoconductive ZnO nanorods grown on flexible substrates have slow responses or recovery as well as low spectral responsivity R because of the native defects and inferior crystallinity of hydrothermally grown ZnO nanorods at low temperatures. In this study, ZnO nanorod crystallites are doped with Cu or Ni/Cu when grown on polyethylene terephthalate (PET) substrates in an attempt to improve the performance of flexible PDs. The doping with Ni/Cu or Cu not only improves the crystalline quality but also significantly suppresses the density of deep-level emission defects in as-grown ZnO nanorods, as demonstrated by X-ray diffraction and photoluminescence. Furthermore, the X-ray photoelectron spectroscopy analysis shows that doping with the transition metals significantly increases the oxygen bonding with metal ions with enhanced O/Zn stoichiometry in as-grown nanorods. The fabricated flexible PD devices based on an interdigitated electrode structure demonstrates a very high R of ~123 A/W, a high on-off current ratio of ~130, and a significant improvement in transient response speed exhibiting rise and fall time of ~8 and ~3 s, respectively, by using the ZnO nanorods codoped by Ni/Cu.

Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation

2013 ◽  
Vol 740-742 ◽  
pp. 121-124 ◽  
Author(s):  
Enrique Escobedo-Cousin ◽  
Konstantin Vassilevski ◽  
Toby Hopf ◽  
Nick G. Wright ◽  
Anthony O’Neill ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Solid Phase ◽  
Sample Surface ◽  
Device Fabrication ◽  
Solid Phase Epitaxy ◽  
X Ray ◽  
Graphene Films ◽  
Few Layer Graphene ◽  
The Impact

Few-layers graphene films (FLG) were grown by local solid phase epitaxy on a semi-insulating 6H-SiC substrate by annealing Ni films deposited on the Si and C-terminated faces of the SiC. The impact of the annealing process on the final quality of the FLG films is studied using Raman spectroscopy. X-ray photoelectron spectroscopy was used to verify the presence of graphene on the sample surface. We also demonstrate that further device fabrication steps such as dielectric deposition can be carried out without compromising the FLG films integrity.

The Analysis of Berg-Barrett Skew Reflections and their Applications in the Observation of Process-Induced Imperfections in (111) Silicon Wafers

1966 ◽  
Vol 10 ◽  
pp. 173-184
Author(s):  
E. M. Juleff ◽  
A. G. Lapierre ◽  
R. G. Wolfson
Keyword(s):  
Integrated Circuit ◽  
Device Fabrication ◽  
Angle Of Incidence ◽  
Epitaxial Silicon ◽  
Near Surface ◽  
X Ray ◽  
Specimen Area ◽  
Zero Layer ◽  
And Diffusion ◽  
Circuit Technology

AbstractThe geometry of Berg-Barrett skew reflections (the normal to the specimen surface and the incident and reflected beam vectors are not coplanar) is analyzed with particular reference to (111) silicon. Angular relationships required for obtaining the 78 most intense such reflections are presented on stereographic projections. Skew reflections are utilized to adapt the Berg-Barrett technique of extinction-contrast micrography to the examination of the (111) wafers generally used in integrated circuit technology. Skew reflections are shown to be more suitable for Berg-Barrett micrography than the zero-layer reflections described by Newkirk; in particular, their versatility in providing a means of varying the angle of incidence of the X-ray beam for a specific reflecting plane is demonstrated. A relatively simple experimental arrangement is described for recording skew reflection images. It permits a high resolution X-ray sensitive plate to be placed parallel to the specimen, and their separation to be increased to as much as 5 mm without excessive loss of resolution ; this avoids both image distortion and surface scattering. Furthermore, the specimen area recorded in a single micrograph is 1-3 cm2, which is large enough to eliminate the need for scanning. Exposure times are very short, in the order of 10 min. Micrographs of boron-diffused silicon are presented showing device components delineated by solute strain, strain fields induced in epitaxial silicon films by underlying buried-layer diffusions, and diffusion-induced Lomer-Cottrell dislocations. These micrographs demonstrate the resolution and contrast obtainable over large specimen areas. The capability of the Berg-Barrett technique is discussed in the examination of the near-surface regions directly involved in device fabrication and operation.

Study on Thallium Bromide Radioactive Detector

2019 ◽  
Vol 5 (2) ◽  
Author(s):  
He Li-xia ◽  
Hao Xiao-yong ◽  
He Gao-kui
Keyword(s):  
High Energy Physics ◽  
Gamma Ray ◽  
Detection Efficiency ◽  
Nuclear Material ◽  
High Energy ◽  
Device Fabrication ◽  
Signal Acquisition ◽  
X Ray ◽  
Thallium Bromide ◽  
And Performance

Thallium bromide (TlBr) is a compound semiconductor material, which can be used for X-ray and gamma-ray detectors and can be used at room temperature. It has excellent physical properties, high atomic number and density, wide bandgap (B = 2.68 eV), and low ionization energy. Compared with other X-ray and gamma-ray detection materials, TlBr devices have high detection efficiency and excellent energy resolution performance. So TlBr is suitable for housing in small tubes or shells, and it can be widely used in nuclear material measurement, safeguards verification, national security, space high-energy physics research, and other fields. Based on the fabrication of TlBr prototype detector, this paper focuses on the device fabrication and signal acquisition technology. Gamma-ray spectrum measurements and performance tests are carried out with AM-241 radioactive source. The results show that the special photoelectric peak of 59.5 keV is clearly visible, and the optimal resolution is 4.15 keV (7%).

Analysis Of Sige Fet Device Structures On Silicon-on-sapphire Substrates by X-Ray Diffraction

1998 ◽  
Vol 533 ◽  
Author(s):  
P. M. Mooney ◽  
J. O. Chu ◽  
J. A. Ott ◽  
J. L. Jordan-Sweet ◽  
B. S. Meyerson ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Wafer Cleaning ◽  
Device Structures

AbstractSi/Si1-xGex, heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultra-high vacuum chemical vapor deposition for application as p-channel field effect transistors. High-resolution triple-axis x-ray diffraction was used to analyze these structures quantitatively and to evaluate the effects of device fabrication processes on them. Out-;diffusion of Ge from the Si1-xGex, quantum well was observed after fabrication as was the change in thickness of the Si cap layer due to wafer cleaning and gate oxidation at 875 °C

IIIA-3 LSI and magnetic bubbles device fabrication by X-ray lithography

1976 ◽  
Vol 23 (11) ◽  
pp. 1253-1253
Author(s):  
D. Maydan ◽  
G.A. Coquin ◽  
J.R. Maldonado ◽  
S. Somekh ◽  
G.N. Taylor
Keyword(s):  
Device Fabrication ◽  
X Ray
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