Reactive Ion Beam Etching with  CF 4: Characterization of a Kaufman Ion Source and Details of SiO2 Etching

1982 ◽  
Vol 129 (3) ◽  
pp. 585-591 ◽  
Author(s):  
T. M. Mayer ◽  
R. A. Barker
1982 ◽  
Vol 21 (Part 2, No. 1) ◽  
pp. L4-L6 ◽  
Author(s):  
Seitaro Matsuo ◽  
Yoshio Adachi

1992 ◽  
Vol 31 (Part 1, No. 5A) ◽  
pp. 1541-1544 ◽  
Author(s):  
Akihiro Matsutani ◽  
Fumio Koyama ◽  
Kenichi Iga

1989 ◽  
Vol 28 (Part 2, No. 9) ◽  
pp. L1671-L1672
Author(s):  
Kyusaku Nishioka ◽  
Hiroaki Morimoto ◽  
Yoji Mashiko ◽  
Tadao Kato

2012 ◽  
Vol 523-524 ◽  
pp. 961-966
Author(s):  
Hideaki Tanaka ◽  
Yukio Maeda

Magnetic recording technologies are continuing to advance toward higher areal densities, driven by the availability of tunneling magnetoresistive (TMR) heads. However, high areal density heads require smaller physical dimensions, and this can render TMR heads more vulnerable to mechanical stresses generated during the lapping process. Although is important to verify the durability of TMR heads against lapping, it is very difficult to perform a crystallographic analysis of the affected layer because of the small dimensions involved. In this study, we attempted to establish an advanced TMR head verification method based on a magnetic performance analysis involving micro-Kerr hysteresis loops and the magnetic noise spectrum. We found that the magnetic performance changed when nanoscale scratches were removed from the lapped surface using ion beam etching. This indicates that the lapping process produces an affected layer which deteriorates the magnetic characteristics of the TMR head. A correlation was also found between the change in magnetic performance and the morphology of lapped surface.


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