Initial Oxide Growth Rate on Newly Generated Surfaces

1982 ◽  
Vol 129 (11) ◽  
pp. 2500-2501 ◽  
Author(s):  
T. R. Beck
Keyword(s):  
Growth Rate ◽  
Oxide Growth

In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures

2010 ◽  
Vol 645-648 ◽  
pp. 813-816 ◽  
Author(s):  
Keiko Kouda ◽  
Yasuto Hijikata ◽  
Hiroyuki Yaguchi ◽  
Sadafumi Yoshida
Keyword(s):  
Growth Rate ◽  
Spectroscopic Ellipsometry ◽  
Reaction Rate ◽  
Oxidation Process ◽  
Early Stage ◽  
Oxide Thickness ◽  
Oxide Growth ◽  
Low Oxygen ◽  
Partial Pressures

We have investigated the oxidation process of SiC (000-1) C-face at low oxygen partial pressures using an in-situ spectroscopic ellipsometry. The oxide growth rate decreased steeply at the early stage of oxidation and then slowly decreased with increasing oxide thickness. The initial oxide growth rate was almost proportional to the oxygen　partial　pressure for both the polar directions. This result suggests that the initial interfacial reaction rate is constant regardless of the concentration of oxidants reaching the interface.

Effects and Applications of Multiple-Gas Rta Treatment on Ti-Based Metallization for Future Dram Devices

1995 ◽  
Vol 387 ◽  
Author(s):  
John M. Drynan ◽  
Kuniaki Koyama
Keyword(s):  
Growth Rate ◽  
Polycrystalline Silicon ◽  
Memory Cell ◽  
Rutile Phase ◽  
Oxide Growth ◽  
Etch Stop ◽  
Ambient Gases ◽  
Ar Gas ◽  
Film Characteristics ◽  
N Compounds

AbstractThe effects of N2, O2, and Ar gas RTA treatments on Ti, TiN, and Ti-polycide film characteristics have been investigated in anticipation of the trend in DRAM development toward lower resistance materials to replace the standard WSi2, WSi2 on doped polycrystalline silicon (W-polycide), and doped polysilicon conductors used in interconnections, transistor gates, and contact-hole plugs, respectively. The reactivities of Ti and TiN in N2 and O2 gases are markedly different. Film characteristics such as sheet resistance, crystallinity, and elemental composition remain unchanged for TiN RTA-treated in N2 but vary significantly for Ti. In the case of Ti, XRD and XPS data indicate the formation of intermediate Ti-rich TiN or Ti2N compounds prior to the final TiN phase. Similarly, RTO-treated TiN shows a slower oxide growth rate compared with that of Ti. In the case of TiN, a surface layer of rutile phase TiO2 is directly formed, whereas for Ti the data suggest the formation of Ti-rich oxides such as Ti2O or TiO prior to the final TiO2 rutile phase. RTA treatment in different ambient gases can be used to create multilayer Ti-polycide and TiN/Ti metallization with self-aligned TiO2 passivation and etch-stop layers. TiN can also be applied with other materials and processes to form new DRAM memory cell capacitor structures.

Theory of thermal Si oxide growth rate taking into account interfacial Si emission effects

2001 ◽  
Vol 59 (1-4) ◽  
pp. 301-309 ◽  
Author(s):  
H. Kageshima ◽  
M. Uematsu ◽  
K. Shiraishi
Keyword(s):  
Growth Rate ◽  
Oxide Growth

Effect of a Tensile Load on the Oxide Growth Rate on Ni-20Cr Alloy

2001 ◽  
Vol 194-199 ◽  
pp. 1695-1700
Author(s):  
G. Calvarin-Amiri ◽  
Bernard Lesage ◽  
Anne Marie Huntz ◽  
Régine Molins
Keyword(s):  
Growth Rate ◽  
Tensile Load ◽  
Oxide Growth

Trench Formation on Ion Implanted SiC Surfaces after Thermal Oxidation

2005 ◽  
Vol 483-485 ◽  
pp. 777-780 ◽  
Author(s):  
Wook Bahng ◽  
Geun Ho Song ◽  
Nam Kyun Kim ◽  
Sang Cheol Kim ◽  
Hyoung Wook Kim ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Ion Implantation ◽  
Doping Concentration ◽  
Side Wall ◽  
Surface Region ◽  
Surface Roughening ◽  
Oxide Growth ◽  
High Temperature Annealing ◽  
Thermal Oxide

The effects of the damage induced during ion implantation on the surface roughening and oxide growth rate were investigated. Using several scheme of doses and acceleration energies, it is found that the amount of the dose predominantly produce damage rather than the acceleration energy, especially near the surface region. It was also found that the damage affects not only the oxide growth rate but also the surface roughening during high temperature annealing. The edge of highly implanted area may have higher doping concentration due to the vicinal side wall effect of the thick oxide mask for ion implantation. It was confirmed by the trench formation after thermal oxide remove.

Modeling of Reactive Spray Atomization and Deposition

1998 ◽  
Author(s):  
S. Dai ◽  
J.-P. Delplanque ◽  
E.J. Lavernia ◽  
R.H. Rangel
Keyword(s):  
Growth Rate ◽  
Oxygen Pressure ◽  
Linear Growth ◽  
Spray Deposition ◽  
Experimental Investigations ◽  
Spray Atomization ◽  
Oxide Growth ◽  
Low Oxygen ◽  
Low Oxygen Pressure ◽  
Good Agreement

Abstract Recent experimental investigations of reactive spray deposition of aluminum alloys have indicated that oxides could not be detected for atomization gas oxygen contents lower than 10%. In order to elucidate this behavior, an analysis of the oxidation kinetics during reactive spray deposition based on the Mott-Cabrera theory of oxidation is proposed herein. A linear growth law is obtained that indicates that the oxide growth rate decreases with decreasing temperature or oxygen pressure. Furthermore, the oxide growth rate is found to decrease faster at low oxygen pressure with decreasing temperature as well as at low temperature with decreasing oxygen pressure. Calculations of the width of oxide stringers as a function of oxygen content and superheat temperature based on this analysis are in good agreement with the experimental observations.

Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime

2008 ◽  
Vol 47 (10) ◽  
pp. 7803-7806 ◽  
Author(s):  
Takeshi Yamamoto ◽  
Yasuto Hijikata ◽  
Hiroyuki Yaguchi ◽  
Sadafumi Yoshida
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Oxide Growth ◽  
Rate Enhancement ◽  
Thin Oxide

Native Oxide Growth Rate of Si Surface with Various Flatness

1994 ◽  
Author(s):  
T. Itoga ◽  
A. Hiraoka ◽  
F. Yano ◽  
J. Yugami ◽  
M. Ohkura
Keyword(s):  
Growth Rate ◽  
Native Oxide ◽  
Oxide Growth

Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model

2009 ◽  
Vol 615-617 ◽  
pp. 489-492 ◽  
Author(s):  
Yasuto Hijikata ◽  
Hiroyuki Yaguchi ◽  
Sadafumi Yoshida
Keyword(s):  
Growth Rate ◽  
Carbon Emission ◽  
Oxidation Process ◽  
Oxidation Mechanism ◽  
Oxide Thickness ◽  
Oxide Growth ◽  
Emission Model ◽  
Oxide Interface ◽  
Depth Profiles ◽  
The Difference

We proposed a kinetic model for SiC oxidation, named ‘silicon and carbon (Si-C) emission model’, taking into account the emission of Si and C atoms from the SiC–oxide interface, which suppresses the oxidation rate at the interface. Based on the model, we calculated oxide growth rates for SiC (0001) Si- and (000–1) C-face and found that the calculated values exhibit good fits to the measured ones in the entire oxide thickness range for both faces. We also calculated depth profiles of Si and C interstitials and oxidants, and discussed the oxidation mechanism of SiC as well as the difference in the oxidation process of Si-face and C-face.

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