Compositional Depth Profile of a Native Oxide LPCVD MNOS Structure Using X‐Ray Photoelectron Spectroscopy and Chemical Etching

1983 ◽  
Vol 130 (3) ◽  
pp. 691-699 ◽  
Author(s):  
J. A. Wurzbach ◽  
F. J. Grunthaner
Keyword(s):  
Depth Profile ◽  
Photoelectron Spectroscopy ◽  
Chemical Etching ◽  
Native Oxide ◽  
X Ray ◽  
Compositional Depth Profile

Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH4F Treated Si(111) Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
Takeo Hattori ◽  
Hiroki Ogawa
Keyword(s):  
Photoelectron Spectroscopy ◽  
Attenuated Total Reflection ◽  
Native Oxide ◽  
X Ray ◽  
Chemical Treatments ◽  
Chemical Structures ◽  
Native Oxides ◽  
Ft Ir ◽  
Wet Chemical ◽  
Silicon Interface

ABSTRACTChemical structures of native oxides formed during wet chemical treatments on NH4F treated Si(111) surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared Attenuated Total Reflection(FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxides and those at native oxide/silicon interface are negligibly small in the case of native oxides formed in H2SO4-H2O2-H2O solution. Based on this discovery, it was confirmed that native oxides can be characterized by the amount of Si-H bonds in native oxides. Furthermore, it was found that the combination of various wet chemical treatments with the treatment in NH4OH-H2O2-H2O solution results in the drastic decrease in the amount of Si-H bonds in native oxides.

Characterization of native oxide film on amorphous Co66Si16B12Fe4Mo2 by X-ray photoelectron spectroscopy

2010 ◽  
Vol 490 (1-2) ◽  
pp. 613-617 ◽  
Author(s):  
Rohit Jain ◽  
Deepika Bhandari ◽  
Anil Dhawan ◽  
S.K. Sharma
Keyword(s):  
Oxide Film ◽  
Photoelectron Spectroscopy ◽  
Native Oxide ◽  
X Ray

Chemical Structure of Native Oxide Grown on Hydrogenterminated Silicon Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
M. Takakura ◽  
T. Yasaka ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Pure Water ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Appreciable Amount ◽  
X Ray ◽  
Thermal Oxide ◽  
Phonon Peak ◽  
Strained Bonds

ABSTRACTChemical bonding features and suboxide compositions in native oxide grown on chemically-cleaned hydrogen-terminated Si(100) surfaces stored in pure water have been studied by using surface sensitive infrared spectroscopy and x-ray photoelectron spectroscopy. The LO phonon peak for the native oxide is located at 1210cm−1, which is shifted to a significantly lower wavenumber side than the ultrathin thermal oxide peak at 1250cm−1. This is because an appreciable amount of SiHx bonds are incorporated in the native oxide/Si interface and such hydrogen termination in the network dramatically reduces strained bonds in the interface. Very weak Si2+ suboxide signal from the oxide grown in pure water is also explained by the incorporated SiHx bonds which interrupt the Si2+ suboxide formation in the interface.

An X-ray photoelectron spectroscopy depth profile study on the InGeNi/(110) cleaved GaAs structure

2018 ◽  
Vol 82 ◽  
pp. 62-66 ◽  
Author(s):  
Constantin Catalin Negrila ◽  
Mihail Florin Lazarescu ◽  
Constantin Logofatu ◽  
Rodica V. Ghita ◽  
Costel Cotirlan
Keyword(s):  
Depth Profile ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Gaas Structure ◽  
Profile Study

Segregation of Cu on Etched and Non-Etched Al(Cu) Surface

1998 ◽  
Vol 516 ◽  
Author(s):  
Hua Li ◽  
Karen Maex ◽  
Bert Brijs ◽  
Thierry Conard ◽  
Wilfried Vandervorst ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Native Oxide ◽  
Interface Area ◽  
X Ray ◽  
Origin And Evolution ◽  
Significant Enrichment ◽  
Segregation Phenomenon ◽  
Al Oxide

AbstractIn this paper, we have studied the segregation phenomenon of Cu on the surfaces of patterned lines, dry-etched films and non-etched films, by using X-ray photoelectron spectroscopy and lower energy Rutherford Backscattering Spectrometry. Significant enrichment of Cu is found on the sidewall of the lines. Annealing at 350°C and above cause the disappearance of this enrichment. Origin and evolution of this Cu enrichment have been investigated on films taken out from different steps of the etching process. It has been found that most of the Cu products induced by the plasma etching are CuCl and CuCl2 and they are removed mostly from the top Al oxide layer by the strip process. On the interface area between Al and the native oxide, considerable quantities of etched induced Cu are retained. This Cu is identified to be mainly metallic Cu. Different from the mechanism explained above, thermal annealing can also cause Cu segregation. We have found that Cu atoms diffuse into the native Al oxide where they form Cu2O.

Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and Morphology

2018 ◽  
Vol 282 ◽  
pp. 94-98
Author(s):  
Graniel Harne A. Abrenica ◽  
Mikhail V. Lebedev ◽  
Hy Le ◽  
Andreas Hajduk ◽  
Mathias Fingerle ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Surface Chemistry ◽  
Photoelectron Spectroscopy ◽  
Chemical Etching ◽  
Electrochemical Etching ◽  
Spectroscopic Techniques ◽  
X Ray ◽  
Etching Behavior ◽  
Effect Of Oxygen

We report on the (electro) chemical etching behavior, surface morphology and composition of n-type Ge (100) in acidic halide solutions using various analytical and spectroscopic techniques. The use of an integrated (electro) chemical etching chamber connected to X-ray photoelectron spectroscopy instrument to exclude the effect of oxygen from atmosphere is highlighted.

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