Photoexcitation Effects on the Growth Rate in the Vapor Phase Epitaxial Growth of GaAs

1985 ◽  
Vol 132 (8) ◽  
pp. 1939-1942 ◽  
Author(s):  
J. Nishizawa ◽  
Y. Kokubun ◽  
H. Shimawaki ◽  
M. Koike
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Vapor Phase

Iodine vapor phase growth of GaN: dependence of epitaxial growth rate on process parameters

2002 ◽  
Vol 235 (1-4) ◽  
pp. 140-148 ◽  
Author(s):  
V Tassev ◽  
D Bliss ◽  
M Suscavage ◽  
Q.S Paduano ◽  
S-Q Wang ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Process Parameters ◽  
Iodine Vapor ◽  
Phase Growth ◽  
Vapor Phase Growth

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

The facet evolution during metalorganic vapor phase epitaxial growth on V-grooved high Miller index GaAs substrates

1994 ◽  
Vol 139 (3-4) ◽  
pp. 231-237 ◽  
Author(s):  
Moo-Sung Kim ◽  
Yong Kim ◽  
Min-Suk Lee ◽  
Young Ju Park ◽  
Seong-Il Kim ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Miller Index ◽  
Gaas Substrates

Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

2003 ◽  
Vol 32 (7) ◽  
pp. 656-660 ◽  
Author(s):  
C. D. Maxey ◽  
J. P. Camplin ◽  
I. T. Guilfoy ◽  
J. Gardner ◽  
R. A. Lockett ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Organic Vapor ◽  
Metal Organic

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Yu. V. Melnik ◽  
A. E. Nikolaev ◽  
S. I. Stepanov ◽  
A. S. Zubrilov ◽  
I. P. Nikitina ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Micro Analysis

AbstractGaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/min. The thickness of the AIGaN layers ranged from 0.5 to 5 μm. The AIN concentration in AIGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.Electrical measurements performed on AIGaN/GaN/SiC samples indicated that undoped AIGaN layers are conducting at least up to 50 mol. % of AIN.

Orientation Effects in GaP Vapor Phase Epitaxial Growth

1969 ◽  
Vol 8 (7) ◽  
pp. 973-974 ◽  
Author(s):  
Yoshitaka Furukawa ◽  
Ganzo Iwane ◽  
Seigo Ando
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Orientation Effects
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