Deep Levels in Semi‐Insulating LEC GaAs Before and After Silicon Implantation

1985 ◽  
Vol 132 (11) ◽  
pp. 2673-2677 ◽  
Author(s):  
Salam Dindo ◽  
Ibrahim Abdel‐Motaleb ◽  
Kerry Lowe ◽  
Wade Tang ◽  
Lawrence Young
Keyword(s):  
Deep Levels ◽  
Before And After ◽  
Lec Gaas ◽  
Silicon Implantation

Carrier Profile Variation of a Channel Conductive Layer Through Phospho-Silicate-Glass Cap Annealing of N+ Si-Implanted GaAs Crystals

1992 ◽  
Vol 262 ◽  
Author(s):  
Yasuyuki Saito
Keyword(s):  
Silicate Glass ◽  
Depth Profile ◽  
Scattering Amplitude ◽  
High Dose ◽  
Amplitude Variation ◽  
Active Layers ◽  
Profile Variation ◽  
Concentration Depth Profile ◽  
Before And After ◽  
Lec Gaas

ABSTRACTThis paper reports the variation of carrier concentration depth profile in Si-implanted channel conductive layers of liquid- encapsulated-Czochralski- technique (LEC) grown GaAs crystals, the Vth scattering amplitude variation and the averaged Vth variation before and after phospho-silicate-glass (PSG) cap annealing of high-dose-Si-ion implanted crystal layers. Furthermore, the PSG-cap-annealing Vth variation difference between the As-rich LEC crystal and the near-stoichiometric LEC crystal is presented. These results, and carrier depth profile of Si-implanted active layers in LEC GaAs crystals through model of implanted Si atom move (like diffusion) and Si atom capture of a crystal lattice and siteing on lattice are discussed.

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

2013 ◽  
Vol 740-742 ◽  
pp. 373-376 ◽  
Author(s):  
Kazuki Yoshihara ◽  
Masashi Kato ◽  
Masaya Ichimura ◽  
Tomoaki Hatayama ◽  
Takeshi Ohshima
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Low Energy ◽  
Epitaxial Layers ◽  
Before And After ◽  
Low Energy Electron ◽  
Transient Spectroscopy ◽  
P Type

We have characterized deep levels in as-grown and electron irradiated p-type 4H-SiC epitaxial layers by the current deep-level transient spectroscopy (I-DLTS) method. A part of the samples were irradiated with electrons in order to introduce defects. As a result, we found that electron irradiation to p-type 4H-SiC created complex defects including carbon vacancy or interstitial. Moreover, we found that observed deep levels are different between before and after annealing, and thus annealing may change structures of defects.

Hydrogen-Related Electron Traps in GaAs and their Relation to Crystal Stoichiometry

1995 ◽  
Vol 378 ◽  
Author(s):  
Tatsuyuki Shinagawa ◽  
Tsugunori Okumura
Keyword(s):  
Deep Level ◽  
Deep Levels ◽  
Electron Traps ◽  
Before And After ◽  
Antisite Defects ◽  
Plasma Hydrogenation

ABSTRACTDeep-level formation upon plasma hydrogenation has been studied with n-GaAs grown by various methods. Four electron traps (EH0-EH3) were generated in As-rich n-GaAs crystals. No electron traps were observed in the LPE layer before and after hydrogenation. The hydrogen as well as excess arsenic defects are responsible for the formation of these deep levels. Two of the generated levels in our study, EH0/EH2, exhibit metastability and are identical to the M3/M4 levels reported by Buchwald et al. It can be speculated that both diffused hydrogen and already existing As antisite defects are responsible for the generation of the metastable defects.

Characterization of deep levels in LEC GaAs crystals by the photoluminescence technique

Physica B+C ◽  
1983 ◽  
Vol 116 (1-3) ◽  
pp. 404-408 ◽  
Author(s):  
M. Tajima ◽  
Y. Okada
Keyword(s):  
Deep Levels ◽  
Lec Gaas

Space Distribution of Deep Levels in SiGe/Si Heterostructure

1993 ◽  
Vol 325 ◽  
Author(s):  
Zhang Rong ◽  
Yang Kai ◽  
Gu Shulin ◽  
Shi Yi ◽  
Huang Hongbin ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Deep Level ◽  
Deep Levels ◽  
Defect Complex ◽  
Space Distribution ◽  
Misfit Dislocations ◽  
Defect States ◽  
Before And After ◽  
Related Defect ◽  
Measure Distribution

AbstractThe small-pulse DLTS had been developed to measure distribution of deep levels in CVD grown SiGe/Si heterostructure before and after thermal processing at 800°C. Changes of defect states was found and after processing the original single deep level 0.62eV under the condition band split into two separated traps. A new weak deeper trap signal was found only in the just relaxed region. It could be Ge-related defect complex with misfit dislocations.

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

2003 ◽  
Vol 150 (9) ◽  
pp. G520 ◽  
Author(s):  
E. Simoen ◽  
C. Claeys ◽  
R. Job ◽  
A. G. Ulyashin ◽  
W. R. Fahrner ◽  
...  
Keyword(s):  
Low Temperature ◽  
Deep Levels ◽  
High Resistivity ◽  
Before And After

The Effect of Annealing on High-resistivity and Semi-insulating 4H-SiC

2002 ◽  
Vol 742 ◽  
Author(s):  
S. R. Smith ◽  
A. O. Evwaraye ◽  
W. C. Mitchel
Keyword(s):  
Transition Metal ◽  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Deep Levels ◽  
High Resistivity ◽  
Admittance Spectroscopy ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Before And After

ABSTRACTWe have examined specimens of high-resistivity, and semi-insulating, 4H-SiC before and after thermal annealing at 1600 °C, using Optical Admittance Spectroscopy. We have found enhanced ultraviolet response in most specimens. Enhanced activation of previously undetected V impurities has also been observed. Peaks believed to be attributable to complex V-related defects were greatly reduced by annealing. The annealing was in addition to a thermal oxidation at 1150 °C for 4 hours. The purpose of the oxidation was to remove surface-related deep levels known to be present in polished SiC. Transition metal impurities in these bulk specimens were quantified by SIMS. In specimens where Ti was not detected by SIMS, no further activation of Ti centers was detected by Optical Admittance Spectroscopy.

Deformation Replication

1970 ◽  
Vol 28 ◽  
pp. 280-281
Author(s):  
J. Temple Black
Keyword(s):  
Cutting Speed ◽  
Machining Process ◽  
Depth Of Cut ◽  
Rake Face ◽  
Orthogonal Machining ◽  
Aluminum Chips ◽  
Before And After ◽  
Materials Used ◽  
Glass Knife ◽  
Very High

Tool materials used in ultramicrotomy are glass, developed by Latta and Hartmann (1) and diamond, introduced by Fernandez-Moran (2). While diamonds produce more good sections per knife edge than glass, they are expensive; require careful mounting and handling; and are time consuming to clean before and after usage, purchase from vendors (3-6 months waiting time), and regrind. Glass offers an easily accessible, inexpensive material ($0.04 per knife) with very high compressive strength (3) that can be employed in microtomy of metals (4) as well as biological materials. When the orthogonal machining process is being studied, glass offers additional advantages. Sections of metal or plastic can be dried down on the rake face, coated with Au-Pd, and examined directly in the SEM with no additional handling (5). Figure 1 shows aluminum chips microtomed with a 75° glass knife at a cutting speed of 1 mm/sec with a depth of cut of 1000 Å lying on the rake face of the knife.

The Clinical, Roentgenological and Morphological Effects of an Acute Exposure of Phosgene on the Lungs of Dogs

1971 ◽  
Vol 29 ◽  
pp. 236-237
Author(s):  
R. F. Bils ◽  
W. F. Diller ◽  
F. Huth
Keyword(s):  
Latent Period ◽  
Chemical Industry ◽  
Toxic Substance ◽  
Lung Edema ◽  
X Rays ◽  
Beagle Dogs ◽  
Male And Female ◽  
Morphological Alterations ◽  
Before And After ◽  
Electron Microscopes

Phosgene still plays an important role as a toxic substance in the chemical industry. Thiess (1968) recently reported observations on numerous cases of phosgene poisoning. A serious difficulty in the clinical handling of phosgene poisoning cases is a relatively long latent period, up to 12 hours, with no obvious signs of severity. At about 12 hours heavy lung edema appears suddenly, however changes can be seen in routine X-rays taken after only a few hours' exposure (Diller et al., 1969). This study was undertaken to correlate these early changes seen by the roengenologist with morphological alterations in the lungs seen in the'light and electron microscopes.Forty-two adult male and female Beagle dogs were selected for these exposure experiments. Treated animals were exposed to 94.5-107-5 ppm phosgene for 10 min. in a 15 m3 chamber. Roentgenograms were made of the thorax of each animal before and after exposure, up to 24 hrs.

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