The Role of Fluorine in Implanted Amorphous Silicon

1986 ◽  
Vol 133 (10) ◽  
pp. 2172-2177 ◽  
Author(s):  
S. P. Wong ◽  
M. C. Poon ◽  
H. L. Kwok ◽  
Y. W. Lam
Keyword(s):  
Amorphous Silicon

The role of density reduction in lithiated amorphous silicon: Molecular dynamics and ab-initio studies

2021 ◽  
Author(s):  
Jay Krishan Dora ◽  
Charchit Saraswat ◽  
Ashish Gour ◽  
Sudipto Ghosh ◽  
Natraj Yedla ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Ab Initio ◽  
Amorphous Silicon ◽  
Density Reduction

Light-Induced Metastable Defects in a-Si:H: Towards an Understanding

1985 ◽  
Vol 49 ◽  
Author(s):  
Martin Stutzmann ◽  
Warren B. Jackson ◽  
Chuang Chuang Tsai
Keyword(s):  
Amorphous Silicon ◽  
Mechanical Stress ◽  
Hydrogenated Amorphous Silicon ◽  
Material Parameters ◽  
Kinetic Behaviour ◽  
Proposed Model ◽  
Special Cases ◽  
The Stability ◽  
Hydrogenated Amorphous

AbstractThe dependence of the creation and the annealing of metastable dangling bonds in hydrogenated amorphous silicon on various material parameters will be discussed in the context of a recently proposed model. After a brief review of the kinetic behaviour governing defect creation and annealing in undoped a- Si:H, a number of special cases will be analyzed: the influence of alloying with O, N, C, and Ge, changes introduced by doping and compensation, and the role of mechanical stress. Finally, possibilities to increase the stability of a-Si:H based devices will be examined.

The role of the blocking structure in hydrogenated amorphous silicon vidicon targets

1981 ◽  
Vol 52 (12) ◽  
pp. 7275-7280 ◽  
Author(s):  
Shunri Oda ◽  
Keishi Saito ◽  
Hisashi Tomita ◽  
Isamu Shimizu ◽  
Eiichi Inoue
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

LIGHT-INDUCED EXCESS CONDUCTIVITY AND THE ROLE OF ARGON IN THE DEPOSITION OF DOPING-MODULATED AMORPHOUS SILICON SUPERLATTICES.

1985 ◽  
Vol 56 ◽  
Author(s):  
F.-C. Su ◽  
S. Levine ◽  
P. E. Vanier ◽  
F. J. Kampas
Keyword(s):  
Amorphous Silicon ◽  
Amorphous Semiconductor ◽  
Excess Conductivity ◽  
The Novel ◽  
Semiconductor Superlattice ◽  
Deposition Parameters ◽  
Superlattice Structures ◽  
Argon Dilution ◽  
P Type

AbstractAmorphous semiconductor superlattice structures consisting of alternating n-type and p-type doped layers of hydrogenated amorphous silicon (a-Si:H) have been made by silane glow discharge in a single chamber system. These multilayered films show the novel phenomenon of light-induced excess conductivity (LEC) associated with a metastable state having a lifetime of order of days. This report shows that the LEC effect is quite dependent on the specific details of the deposition parameters, namely dilution of the silane with inert gas, substrate temperature and layer thickness. In order to investigate the origin of the LEC effect, argon dilution was used for specific regions of the structure. This experiment shows that the slow states are distributed throughout the layers, and are not concentrated at the interfaces.

Role of ions in PECVD of amorphous silicon

1995 ◽  
Vol 74-75 ◽  
pp. 63-66 ◽  
Author(s):  
W.G.J.H.M. van Sark ◽  
J. Bezemer ◽  
W.F. van der Weg
Keyword(s):  
Amorphous Silicon

The Ultrafast Carrier Dynamics in Semiconductors: The Role of Defects

1995 ◽  
Vol 378 ◽  
Author(s):  
P. M. Fauchet ◽  
G. W. Wicks ◽  
Y. Kostoulas ◽  
A. I. Lobad ◽  
K. B. Ucer
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Free Carrier ◽  
Carrier Dynamics ◽  
Ultrafast Laser ◽  
Ultrafast Laser Spectroscopy ◽  
Ultrafast Carrier ◽  
Scattering Time

AbstractThe presence of point defects is expected to influence the properties of free carrier in semiconductors. We have used the techniques of ultrafast laser spectroscopy to characterize the dynamics of photoinjected carriers in several III–V semiconductors grown at low temperature. The initial scattering time and the lifetime of the carriers become very short at low growth temperatures. Results obtained with low-temperature grown III–Vs are compared to those obtained with III–Vs grown at normal temperatures and amorphous silicon.

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