The Reactive Ion Etching of Tantalum Silicide/Polysilicon Bilayers in Silicon Tetrachloride and Hydrogen Chloride

1989 ◽  
Vol 136 (5) ◽  
pp. 1463-1468 ◽  
Author(s):  
B. J. Curtis ◽  
H. R. Brunner
Keyword(s):  
Hydrogen Chloride ◽  
Reactive Ion Etching ◽  
Silicon Tetrachloride ◽  
Ion Etching ◽  
Tantalum Silicide

Low Damage Magnetron Reactive Ion Etching of GaAs

1991 ◽  
Vol 240 ◽  
Author(s):  
G. Mclane ◽  
M. Meyyappan ◽  
M. W. Cole ◽  
H. S. Lee ◽  
R. Lareau ◽  
...  
Keyword(s):  
Minimal Surface ◽  
Reactive Ion Etching ◽  
Surface Region ◽  
Surface Damage ◽  
Silicon Tetrachloride ◽  
Attractive Alternative ◽  
Ion Etching

ABSTRACTMagnetron reactive ion etching is an attractive alternative to reactive ion etching since it has the potential for producing minimal surface damage while still retaining the advantages of reactive ion etching. We report here the results of a study of GaAs magnetron ion etching using Freon-12 and silicon tetrachloride etch gases. Differences are found in etch profiles and surface region characteristics of GaAs samples etched by the two gases. The relevant mechanisms are discussed.

Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)

1993 ◽  
Vol 63 (20) ◽  
pp. 2777-2779 ◽  
Author(s):  
I. Adesida ◽  
A. Mahajan ◽  
E. Andideh ◽  
M. Asif Khan ◽  
D. T. Olsen ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Reactive Ion Etching ◽  
Silicon Tetrachloride ◽  
Ion Etching

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata
Keyword(s):  
Mass Transport ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Monolithically Integrated

scholarly journals An Assessment of Surface Treatments for Adhesion of Polyimide Thin Films

Polymers ◽  
2021 ◽  
Vol 13 (12) ◽  
pp. 1955
Author(s):  
Marco Cen-Puc ◽  
Andreas Schander ◽  
Minerva G. Vargas Gleason ◽  
Walter Lang
Keyword(s):  
Flexible Electronics ◽  
Oxygen Plasma ◽  
Reactive Ion Etching ◽  
Peel Test ◽  
Scratch Test ◽  
Peel Strength ◽  
Surface Treatments ◽  
Oxygen Plasma Treatment ◽  
Polyimide Films ◽  
Ion Etching

Polyimide films are currently of great interest for the development of flexible electronics and sensors. In order to ensure a proper integration with other materials and PI itself, some sort of surface modification is required. In this work, microwave oxygen plasma, reactive ion etching oxygen plasma, combination of KOH and HCl solutions, and polyethylenimine solution were used as surface treatments of PI films. Treatments were compared to find the best method to promote the adhesion between two polyimide films. The first selection of the treatment conditions for each method was based on changes in the contact angle with deionized water. Afterward, further qualitative (scratch test) and a quantitative adhesion assessment (peel test) were performed. Both scratch test and peel strength indicated that oxygen plasma treatment using reactive ion etching equipment is the most promising approach for promoting the adhesion between polyimide films.

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